Ronghui Hao
Impact in
- Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
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- Ga2O3 and related materials
Papers in
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- GaN-based semiconductor devices and materials 17
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- Semiconductor materials and devices 9
- Silicon Carbide Semiconductor Technologies 3
- Plasma Diagnostics and Applications 1
- Co-authors
- Guohao Yu (15 shared papers)Yong Cai (15 shared papers)Baoshun Zhang (14 shared papers)Liang Song (11 shared papers)Kai Fu (9 shared papers)Xiaodong Zhang (6 shared papers)Weiyi Li (5 shared papers)Fu Chen (7 shared papers)
In The Last Decade
Ronghui Hao
18 papers receiving 434 citations
Peers
Comparison fields: 5 of 19
- Condensed Matter Physics 429
- Electronic, Optical and Magnetic Materials 262
- Electrical and Electronic Engineering 292
- Materials Chemistry 119
- Atomic and Molecular Physics, and Optics 60
Countries citing papers authored by Ronghui Hao
This map shows the geographic impact of Ronghui Hao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ronghui Hao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ronghui Hao more than expected).
Fields of papers citing papers by Ronghui Hao
This network shows the impact of papers produced by Ronghui Hao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ronghui Hao. The network helps show where Ronghui Hao may publish in the future.
Co-authors
The 25 scholars most cited alongside Ronghui Hao, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2017 | 107 | |
| 2 | 2018 | 95 | |
| 3 | 2016 | 79 | |
| 4 | 2018 | 30 | |
| 5 | 2019 | 22 | |
| 6 | 2016 | 21 | |
| 7 | 2019 | 12 | |
| 8 | 2018 | 11 | |
| 9 | 2019 | 11 | |
| 10 | 2017 | 10 | |
| 11 | 2019 | 9 | |
| 12 | 2018 | 8 | |
| 13 | 2022 | 8 | |
| 14 | 2017 | 7 | |
| 15 | 2023 | 7 | |
| 16 | 2017 | 7 | |
| 17 | 2014 | 4 | |
| 18 | 2018 | 3 |
About Ronghui Hao
Ronghui Hao is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry and Mechanics of Materials, having authored 18 papers that have together received 451 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (17 papers), Semiconductor materials and devices (9 papers), Ga2O3 and related materials (8 papers), ZnO doping and properties (8 papers), Silicon Carbide Semiconductor Technologies (3 papers), Metal and Thin Film Mechanics (2 papers), Atmospheric and Environmental Gas Dynamics (1 paper) and Plasma Diagnostics and Applications (1 paper). The work is most often cited by research in Condensed Matter Physics (429 citations), Electronic, Optical and Magnetic Materials (262 citations), Electrical and Electronic Engineering (292 citations), Materials Chemistry (119 citations) and Atomic and Molecular Physics, and Optics (60 citations). Ronghui Hao has collaborated with scholars based in China and Canada. Frequent co-authors include Guohao Yu, Yong Cai, Baoshun Zhang, Liang Song, Kai Fu, Xiaodong Zhang, Weiyi Li, Fu Chen, Jie Yuan and Yaming Fan. Their work appears in journals such as Applied Physics Express, AIP Advances, Applied Physics Letters, Electronics Letters and IEEE Electron Device Letters.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.