R. Beccard

41 papers receiving 405 citations

Peers

R. Beccard
Comparison fields: 5 of 30
  • Condensed Matter Physics 266
  • Electronic, Optical and Magnetic Materials 136
  • Atomic and Molecular Physics, and Optics 183
  • Electrical and Electronic Engineering 229
  • Materials Chemistry 163
Replace M. Hansen with:
M. Hansen United States
Y. Smorchkova United States
F. Hamdani United States
G.Y. Zhang China
C.H. Liu Taiwan
Hidetoshi Fujimoto Japan
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T. Sugahara Japan
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R. Beccard relative to M. Hansen United States M. Hansen's profile →
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Citations per year

Countries citing papers authored by R. Beccard

Since Specialization
Citations

This map shows the geographic impact of R. Beccard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Beccard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Beccard more than expected).

Fields of papers citing papers by R. Beccard

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Beccard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Beccard. The network helps show where R. Beccard may publish in the future.

Co-authors

The 25 scholars most cited alongside R. Beccard, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R. Beccard Line = papers co-authored together R. Beccard links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 43 papers — load more, or switch the sort, to bring in the rest.

#Work
1 199890
2 198945
3 199834
4 199833
5 199921
6 198816
7 200115
8 199715
9 199212
10 200312
11 199412
12 200510
13 199810
14 200110
15 20008
16 19918
17 19998
18 19976
19 20006
20 20015

About R. Beccard

R. Beccard is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 43 papers that have together received 426 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (26 papers), Semiconductor Quantum Structures and Devices (20 papers), Semiconductor materials and devices (15 papers), Ga2O3 and related materials (12 papers), ZnO doping and properties (8 papers), Metal and Thin Film Mechanics (6 papers), Silicon Carbide Semiconductor Technologies (4 papers) and Semiconductor materials and interfaces (3 papers). The work is most often cited by research in Condensed Matter Physics (266 citations), Electronic, Optical and Magnetic Materials (136 citations), Atomic and Molecular Physics, and Optics (183 citations), Electrical and Electronic Engineering (229 citations) and Materials Chemistry (163 citations). R. Beccard has collaborated with scholars based in Germany, Sweden and Bulgaria. Frequent co-authors include M. Heuken, B. Schineller, Oliver Schön, H. Jürgensen, K. Heime, P. Balk, A. Hoffmann, L. Eckey, J. Holst and A. Kaschner. Their work appears in journals such as Journal of Crystal Growth, Materials Science and Engineering B, Journal of Electronic Materials, Journal of Applied Physics and MRS Internet Journal of Nitride Semiconductor Research.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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