E. V. Lutsenko

824 citations

80 papers · 691 · h-index 15

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 48
- GaN-based semiconductor devices and materials 48
Atomic and Molecular Physics, and Optics 46
- Semiconductor Quantum Structures and Devices 43

Co-authors: G. P. Yablonskii (57 shared papers)S. V. Ivanov (13 shared papers)V. N. Jmerik (10 shared papers)M. Heuken (39 shared papers)A. А. Ситникова (9 shared papers)О. Б. Тагиев (6 shared papers)B. Schineller (23 shared papers)T. G. Naghiyev (3 shared papers)
Journals: Journal of Crystal Growth (9 papers)Applied Physics Letters (5 papers)physica status solidi (b) (5 papers)physica status solidi (a) (5 papers)Japanese Journal of Applied Physics (3 papers)
Partner nations: Belarus Germany Russia

In The Last Decade

E. V. Lutsenko

73 papers receiving 678 citations

Peers

Countries citing papers authored by E. V. Lutsenko

Since Specialization

Citations

This map shows the geographic impact of E. V. Lutsenko's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. V. Lutsenko with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. V. Lutsenko more than expected).

Fields of papers citing papers by E. V. Lutsenko

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. V. Lutsenko. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. V. Lutsenko. The network helps show where E. V. Lutsenko may publish in the future.

Co-authors

The 25 scholars most cited alongside E. V. Lutsenko, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. V. Lutsenko Line = papers co-authored together E. V. Lutsenko links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 80 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire Applied Physics Letters ·V. N. Jmerik, A. M. Mizerov, A. А. Ситникова, P. S. Kop’ev, S. V. Ivanov, E. V. Lutsenko, Nikolai P. Tarasuk, Н. В. Ржеуцкий, G. P. Yablonskii	2010	52
2	Plasma‐assisted molecular beam epitaxy of AlGaN heterostructures for deep‐ultraviolet optically pumped lasers physica status solidi (a) ·V. N. Jmerik, E. V. Lutsenko, S. V. Ivanov	2013	46
3	Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al₂O₃ Semiconductor Science and Technology ·S. V. Ivanov, Д. В. Нечаев, A. А. Ситникова, В. В. Ратников, M. A. Yagovkina, Н. В. Ржеуцкий, E. V. Lutsenko, V. N. Jmerik	2014	37
4	AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique Journal of Crystal Growth ·V. N. Jmerik, T. V. Shubina, A. M. Mizerov, K. G. Belyaev, A. V. Sakharov, M. V. Zamoryanskaya, A. А. Ситникова, V. Yu. Davydov, P. S. Kop’ev, E. V. Lutsenko, Н. В. Ржеуцкий, А. В. Данильчик, G. P. Yablonskii, S. V. Ivanov	2008	35
5	High photoluminescence stability of CaGa 4 O 7 :Eu 3+ red phosphor in wide excitation intensity interval Optical Materials ·M. S. Leanenia, E. V. Lutsenko, M. V. Rzheutski, G. P. Yablonskii, T. G. Naghiyev, H.B. Ganbarova, О. Б. Тагиев	2016	32
6	Photoluminescence of CaxBa1−xGa2S4:Eu2+ solid solutions in wide excitation intensity and temperature intervals Journal of Luminescence ·M. S. Leanenia, E. V. Lutsenko, M. V. Rzheutski, В. Н. Павловский, G. P. Yablonskii, T. G. Naghiyev, Б. Г. Тагиев, S. A. Abushev, О. Б. Тагиев	2016	31
7	Photoluminescence of Ca x Ba1–x Ga2S4 Solid Solutions Activated by Eu2+ Ions Journal of Applied Spectroscopy ·M. S. Leanenia, E. V. Lutsenko, N. V. Rzheutskij, В. Н. Павловский, G. P. Yablonskii, Т. Г. Нагиев, Б. Г. Тагиев, S. A. Abushev, О. Б. Тагиев	2015	26
8	Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures physica status solidi (a) ·G. P. Yablonskii, E. V. Lutsenko, В. Н. Павловский, Vitaly Z. Zubialevich, А. Л. Гурский, H. Kalisch, A. Szymakowskii, R. A. Jansen, A. Alam, Y. Dikme, B. Schineller, M. Heuken	2002	26
9	Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al₂O₃ by using flux- and temperature-modulated techniques Journal of materials research/Pratt's guide to venture capital sources ·V. N. Jmerik, Д. В. Нечаев, Sergei Rouvimov, В. В. Ратников, P. S. Kop’ev, Mikolai V. Rzheutski, E. V. Lutsenko, G. P. Yablonskii, Maher Aljohenii, Abdulaziz Aljerwii, Ahmed Y. Alyamani, S. V. Ivanov	2015	19
10	Photoluminescence study of Pr3+ doped CaGa2S4 in wide excitation intensity and temperature range Journal of Applied Physics ·M. S. Leanenia, E. V. Lutsenko, M. V. Rzheutski, G. P. Yablonskii, T. G. Naghiyev, О. Б. Тагиев	2021	19
11	Growth, Stimulated Emission, Photo‐ and Electroluminescence of InGaN/GaN EL‐Test Heterostructures Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·E. V. Lutsenko, В. Н. Павловский, Vitaly Z. Zubialevich, A. I. Stognij, А. Л. Гурский, V. A. HRYSHANAU, A. S. Shulenkov, G. P. Yablonskii, Oliver Schön, H. Protzmann, M. Lünenbürger, B. Schineller, Y. Dikme, Rolf A. Jansen, M. Heuken	2002	16
12	Rearrangement of optical centers and stimulated radiation of Eu3+ in polycrystalline huntite under optical and electron-beam excitation Journal of Experimental and Theoretical Physics Letters ·Г. Е. Малашкевич, В. Н. Сигаев, N. V. Golubev, Е. Х. Мамаджанова, А. В. Данильчик, В. З. Зубелевич, E. V. Lutsenko	2010	15
13	Luminescence and Lasing in ZnSe Micropowders at High Optical Excitation Levels Journal of Applied Spectroscopy ·M. S. Leanenya, E. V. Lutsenko, В. Н. Павловский, G. P. Yablonskii, Т. Г. Нагиев, Б. Г. Тагиев, О. Б. Тагиев, S. A. Abushev	2015	15
14	Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping Semiconductors ·S. V. Sorokin, S. V. Gronin, I. V. Sedova, M. V. Rakhlin, М. В. Байдакова, P. S. Kop’ev, Aliaksei G. Vainilovich, E. V. Lutsenko, G. P. Yablonskii, Н. А. Гамов, Е. В. Жданова, М. М. Зверев, S. Ruvimov, S. V. Ivanov	2015	15
15	Recombination dynamics and lasing in ZnO∕ZnMgO single quantum well structures Applied Physics Letters ·T. V. Shubina, А. А. Торопов, O. Lublinskaya, P. S. Kop’ev, С. В. Иванов, Abdelhamid El‐Shaer, M. Al‐Suleiman, A. Bakin, A. Waag, А. Г. Войнилович, E. V. Lutsenko, G. P. Yablonskii, J. P. Bergman, Г. Позина, B. Ḿonemar	2007	14
16	AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy Semiconductors ·V. N. Jmerik, A. M. Mizerov, T. V. Shubina, A. V. Sakharov, A. А. Ситникова, P. S. Kop’ev, S. V. Ivanov, E. V. Lutsenko, A. V. Danilchyk, Н. В. Ржеуцкий, G. P. Yablonskii	2008	14
17	Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN Journal of Applied Physics ·Marianne Germain, E. Kartheuser, А. Л. Гурский, E. V. Lutsenko, Igor P. Marko, В. Н. Павловский, G. P. Yablonskii, K. Heime, M. Heuken, B. Schineller	2002	13
18	Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm Applied Physics Letters ·G. P. Yablonskii, E. V. Lutsenko, В. Н. Павловский, Igor P. Marko, А. Л. Гурский, Vitaly Z. Zubialevich, А. В. Мудрый, Oliver Schön, H. Protzmann, M. Lünenbürger, B. Schineller, M. Heuken, H. Kalisch, K. Heime	2001	13
19	Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates Journal of Crystal Growth ·C. Mauder, B. Reuters, L. Rahimzadeh Khoshroo, M. V. Rzheutskii, E. V. Lutsenko, G. P. Yablonskii, J. Woitok, M. Heuken, H. Kalisch, Rolf A. Jansen	2010	13
20	Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates Journal of Crystal Growth ·G. P. Yablonskii, А. Л. Гурский, В. Н. Павловский, E. V. Lutsenko, Vitaly Z. Zubialevich, T. Shul'ga, A. I. Stognij, H. Kalisch, A. Szymakowski, Rolf A. Jansen, A. Alam, B. Schineller, M. Heuken	2004	12

About E. V. Lutsenko

E. V. Lutsenko is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 80 papers that have together received 691 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (48 papers), Semiconductor Quantum Structures and Devices (43 papers), Ga2O3 and related materials (26 papers), ZnO doping and properties (14 papers), Solid State Laser Technologies (12 papers), Semiconductor Lasers and Optical Devices (9 papers), Luminescence Properties of Advanced Materials (8 papers) and Semiconductor materials and devices (7 papers). The work is most often cited by research in Condensed Matter Physics (418 citations), Electronic, Optical and Magnetic Materials (268 citations), Atomic and Molecular Physics, and Optics (283 citations), Acoustics and Ultrasonics (8 citations) and Materials Chemistry (352 citations). E. V. Lutsenko has collaborated with scholars based in Belarus, Germany and Russia. Frequent co-authors include G. P. Yablonskii, S. V. Ivanov, V. N. Jmerik, M. Heuken, A. А. Ситникова, О. Б. Тагиев, B. Schineller, T. G. Naghiyev, H. Kalisch and A. M. Mizerov. Their work appears in journals such as Journal of Crystal Growth, Applied Physics Letters, physica status solidi (b), physica status solidi (a) and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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E. V. Lutsenko

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