Philippe Roché

1.4k citations

78 papers · 853 · h-index 18

Impact in

Hardware and Architecture top 2%
- VLSI and Analog Circuit Testing
Electrical and Electronic Engineering top 5%
- Radiation Effects in Electronics
- Semiconductor materials and devices
- Low-power high-performance VLSI design
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing

Papers in

Electrical and Electronic Engineering 69
- Radiation Effects in Electronics 47
- Semiconductor materials and devices 22
- Low-power high-performance VLSI design 22
- Integrated Circuits and Semiconductor Failure Analysis 18
- Advancements in Semiconductor Devices and Circuit Design 13
Hardware and Architecture 29
- VLSI and Analog Circuit Testing 27

Co-authors: Gilles Gasiot (38 shared papers)Jean‐Luc Autran (27 shared papers)Sylvain Clerc (21 shared papers)R. Harboe-Sørensen (4 shared papers)Fady Abouzeid (26 shared papers)Sławosz Uznański (9 shared papers)Jean-Marc Daveau (19 shared papers)D. Giot (2 shared papers)
Journals: IEEE Transactions on Nuclear Science (22 papers)IEEE Journal of Solid-State Circuits (2 papers)IEEE Solid-State Circuits Letters (2 papers)Physics Reports (1 paper)Advances in Mathematics (1 paper)
Partner nations: France Switzerland United States

In The Last Decade

Philippe Roché

67 papers receiving 813 citations

Peers

Countries citing papers authored by Philippe Roché

Since Specialization

Citations

This map shows the geographic impact of Philippe Roché's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Philippe Roché with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Philippe Roché more than expected).

Fields of papers citing papers by Philippe Roché

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Philippe Roché. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Philippe Roché. The network helps show where Philippe Roché may publish in the future.

Co-authors

The 25 scholars most cited alongside Philippe Roché, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Philippe Roché Line = papers co-authored together Philippe Roché links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 78 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops IEEE Transactions on Nuclear Science ·Sławosz Uznański, Gilles Gasiot, Philippe Roché, C. Tavernier, Jean‐Luc Autran	2010	58
2	Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs IEEE Transactions on Nuclear Science ·D. Giot, Philippe Roché, Gilles Gasiot, Jean‐Luc Autran, R. Harboe-Sørensen	2008	55
3	Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations IEEE Transactions on Nuclear Science ·D. Giot, Philippe Roché, Gilles Gasiot, R. Harboe-Sørensen	2007	50
4	8.4 A 0.33V/-40°C process/temperature closed-loop compensation SoC embedding all-digital clock multiplier and DC-DC converter exploiting FDSOI 28nm back-gate biasing Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)) ·Sylvain Clerc, Mehdi Saligane, Fady Abouzeid, Martin Cochet, Jean-Marc Daveau, Cyril Bottoni, David Bol, Julien De-Vos, Dominique Zamora, Benjamin Coeffic, Dimitri Soussan, Damien Croain, Mehdi Naceur, Pierre Schamberger, Philippe Roché, Dennis Sylvester	2015	39
5	A Commercial 65 nm CMOS Technology for Space Applications: Heavy Ion, Proton and Gamma Test Results and Modeling IEEE Transactions on Nuclear Science ·Philippe Roché, Gilles Gasiot, Sławosz Uznański, Jean-Marc Daveau, Josep Torras-Flaquer, Sylvain Clerc, R. Harboe-Sørensen	2010	36
6	SER/SEL performances of SRAMs in UTBB FDSOI28 and comparisons with PDSOI and BULK counterparts Gilles Gasiot, Dimitri Soussan, Maximilien Glorieux, Cyril Bottoni, Philippe Roché	2014	34
7	A 225 μm ${}^{2}$ Probe Single-Point Calibration Digital Temperature Sensor Using Body-Bias Adjustment in 28 nm FD-SOI CMOS IEEE Solid-State Circuits Letters ·Martin Cochet, Ben Keller, Sylvain Clerc, Fady Abouzeid, Andreia Cathelin, Jean‐Luc Autran, Philippe Roché, Borivoje Nikolić	2018	32
8	An industrial fault injection platform for soft-error dependability analysis and hardening of complex system-on-a-chip Jean-Marc Daveau, Alexandre Blampey, Gilles Gasiot, J. Bulone, Philippe Roché	2009	30
9	Detailed SET Measurement and Characterization of a 65 nm Bulk Technology IEEE Transactions on Nuclear Science ·Maximilien Glorieux, Adrian Evans, Véronique Ferlet-Cavrois, Cesar Boatella-Polo, Dan Alexandrescu, Sylvain Clerc, Gilles Gasiot, Philippe Roché	2016	29
10	Critical overview of loops and foams Physics Reports ·Sergei Alexandrov, Philippe Roché	2011	26
11	A 2.7 pJ/cycle 16 MHz, 0.7 <inline-formula> <tex-math notation="LaTeX">$\mu\text{W}$ </tex-math> </inline-formula> Deep Sleep Power ARM Cortex-M0+ Core SoC in 28 nm FD-SOI IEEE Journal of Solid-State Circuits ·Guénolé Lallement, Fady Abouzeid, Martin Cochet, Jean-Marc Daveau, Philippe Roché, Jean‐Luc Autran	2018	25
12	New D-Flip-Flop Design in 65 nm CMOS for Improved SEU and Low Power Overhead at System Level IEEE Transactions on Nuclear Science ·Maximilien Glorieux, Sylvain Clerc, Gilles Gasiot, Jean‐Luc Autran, Philippe Roché	2013	23
13	A Comparative Study on the Soft-Error Rate of Flip-Flops from 90-nm Production Libraries Tino Heijmen, Philippe Roché, Gilles Gasiot, Keith Forbes	2006	21
14	Scalable 0.35 V to 1.2 V SRAM Bitcell Design From 65 nm CMOS to 28 nm FDSOI IEEE Journal of Solid-State Circuits ·Fady Abouzeid, Audrey Bienfait, Kaya Can Akyel, Anis Féki, Sylvain Clerc, L. Ciampolini, F. Giner, Robin Wilson, Philippe Roché	2014	21
15	Comparison of multiple cell upset response of BULK and SOI 130NM technologies in the terrestrial environment Gilles Gasiot, Philippe Roché, Philippe Flatresse	2008	19
16	Underground Experiment and Modeling of Alpha Emitters Induced Soft-Error Rate in CMOS 65 nm SRAM IEEE Transactions on Nuclear Science ·Sébastien Martinie, Jean‐Luc Autran, S. Sauze, Daniela Munteanu, Sławosz Uznański, Philippe Roché, Gilles Gasiot	2012	18
17	Pinning of an interface by a weak potential Journal of Statistical Physics ·Fran�ois Dunlop, J. Le Magnen, Vincent Rivasseau, Philippe Roché	1992	18
18	On-Orbit Upset Rate Prediction at Advanced Technology Nodes: a 28 nm FD-SOI Case Study IEEE Transactions on Nuclear Science ·Victor Malherbe, Gilles Gasiot, Dimitri Soussan, Jean‐Luc Autran, Philippe Roché	2016	17
19	28nm CMOS, energy efficient and variability tolerant, 350mV-to-1.0V, 10MHz/700MHz, 252bits frame error-decoder Fady Abouzeid, Sylvain Clerc, Bertrand Pelloux-Prayer, Fabrice Argoud, Philippe Roché	2012	16
20	TIARA: Industrial Platform for Monte Carlo Single-Event Simulations in Planar Bulk, FD-SOI, and FinFET IEEE Transactions on Nuclear Science ·Thomas Thery, Gilles Gasiot, Victor Malherbe, Jean‐Luc Autran, Philippe Roché	2021	14

About Philippe Roché

Philippe Roché is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Biomedical Engineering, Radiation and Mathematical Physics, having authored 78 papers that have together received 853 indexed citations. Recurring topics across this work include Radiation Effects in Electronics (47 papers), VLSI and Analog Circuit Testing (27 papers), Semiconductor materials and devices (22 papers), Low-power high-performance VLSI design (22 papers), Integrated Circuits and Semiconductor Failure Analysis (18 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Analog and Mixed-Signal Circuit Design (9 papers) and Radiation Detection and Scintillator Technologies (8 papers). The work is most often cited by research in Hardware and Architecture (312 citations), Electrical and Electronic Engineering (770 citations), Radiation (39 citations), Nuclear and High Energy Physics (51 citations) and Instrumentation (11 citations). Philippe Roché has collaborated with scholars based in France, Switzerland and United States. Frequent co-authors include Gilles Gasiot, Jean‐Luc Autran, Sylvain Clerc, R. Harboe-Sørensen, Fady Abouzeid, Sławosz Uznański, Jean-Marc Daveau, D. Giot, Maximilien Glorieux and C. Tavernier. Their work appears in journals such as IEEE Transactions on Nuclear Science, IEEE Journal of Solid-State Circuits, IEEE Solid-State Circuits Letters, Physics Reports and Advances in Mathematics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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