P. Hesto

1.0k citations

70 papers · 794 · h-index 16

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Molecular Junctions and Nanostructures

Papers in

Atomic and Molecular Physics, and Optics 44
- Semiconductor Quantum Structures and Devices 20
- Quantum and electron transport phenomena 16
- Semiconductor materials and interfaces 6
- Magnetic properties of thin films 5
Electrical and Electronic Engineering 59
- Semiconductor materials and devices 41
- Advancements in Semiconductor Devices and Circuit Design 39
- Silicon Carbide Semiconductor Technologies 5
- Integrated Circuits and Semiconductor Failure Analysis 5

Co-authors: Philippe Dollfus (34 shared papers)S. Galdin (27 shared papers)Arnaud Bournel (9 shared papers)Éric Cassan (7 shared papers)R. Castagné (7 shared papers)Sylvain Barraud (3 shared papers)P. Bruno (3 shared papers)Marcelo F. Goffman (2 shared papers)
Journals: Thin Solid Films (7 papers)Solid-State Electronics (5 papers)Journal of Applied Physics (4 papers)IEEE Transactions on Electron Devices (4 papers)Semiconductor Science and Technology (3 papers)
Partner nations: France Germany Netherlands

In The Last Decade

P. Hesto

65 papers receiving 748 citations

Peers

Countries citing papers authored by P. Hesto

Since Specialization

Citations

This map shows the geographic impact of P. Hesto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Hesto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Hesto more than expected).

Fields of papers citing papers by P. Hesto

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Hesto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Hesto. The network helps show where P. Hesto may publish in the future.

Co-authors

The 25 scholars most cited alongside P. Hesto, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Hesto Line = papers co-authored together P. Hesto links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 70 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon IEEE Transactions on Electron Devices ·Antonio Abramo, L. Baudry, ROSSELLA BRUNETTI, R. Castagné, M. Charef, F. Dessenne, Ph. Dollfus, R.W. Dutton	1994	55
2	Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation IEEE Transactions on Electron Devices ·Ph. Dollfus, Arnaud Bournel, S. Galdin, Sylvain Barraud, P. Hesto	2004	52
3	Gate-induced spin precession in an In0.53Ga0.47As two dimensional electron gas The European Physical Journal Applied Physics ·Arnaud Bournel, Philippe Dollfus, P. Bruno, P. Hesto	1998	47
4	Fabrication and characterization of sub-3 nm gaps for single-cluster and single-molecule experiments Nanotechnology ·Mathieu Lambert, Marcelo F. Goffman, J.P. Bourgoin, P. Hesto	2003	39
5	Band offset predictions for strained group IV alloys: Si1-x-yGexCyon Si(001) and Si1-xGexon Si1-zGez(001) Semiconductor Science and Technology ·S. Galdin, Philippe Dollfus, V. Aubry-Fortuna, P. Hesto, H. J. Osten	2000	34
6	Scaling Law in Carbon Nanotube Electromechanical Devices Physical Review Letters ·R. L. R. Lefevre, Marcelo F. Goffman, Vincent Derycke, Csilla Mikó, Lászlø Forró, J.‐P. Bourgoin, P. Hesto	2005	32
7	Study of direct tunneling through ultrathin gate oxide of field effect transistors using Monte Carlo simulation Journal of Applied Physics ·Éric Cassan, S. Galdin, Philippe Dollfus, P. Hesto	1999	30
8	Physical and electrical properties of yttria-stabilized zirconia epitaxial thin films deposited by ion beam sputtering on silicon Thin Solid Films ·Claude Pellet, Christian Schwebel, P. Hesto	1989	29
9	Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length Journal of Applied Physics ·Philippe Dollfus, C. Bru, P. Hesto	1993	24
10	Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions IEEE Transactions on Nuclear Science ·O. Musseau, J.L. Leray, V. Ferlet, A. Umbert, Yves‐Marie Coïc, P. Hesto	1991	21
11	Modelling of gate-induced spin precession in a striped channel high electron mobility transistor Solid State Communications ·Arnaud Bournel, Philippe Dollfus, S. Galdin, François-Xavier Musalem, P. Hesto	1997	20
12	Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells Applied Physics Letters ·Arnaud Bournel, Ph. Dollfus, Éric Cassan, P. Hesto	2000	19
13	A proposal and numerical simulation of N + N N + Schottky device for ballistic and quasiballistic electron spectroscopy Applied Physics Letters ·P. Hesto, J.-F. Pône, R. Castagné	1982	19
14	Nanosciences and Nanotechnology CERN Document Server (European Organization for Nuclear Research) ·Jean–Michel Lourtioz, Marcel Lahmani, Claire Dupas-Haeberlin, P. Hesto +2 others	2015	18
15	Short-range and long-range Coulomb interactions for 3D Monte Carlo device simulation with discrete impurity distribution Solid-State Electronics ·Sylvain Barraud, Philippe Dollfus, S. Galdin, P. Hesto	2002	18
16	Surface conductivity of the insulator of an MIS or MIM device Thin Solid Films ·R. Castagné, P. Hesto, A. Vapaille	1973	17
17	Theoretical and experimental considerations on the spin field effect transistor Physica E Low-dimensional Systems and Nanostructures ·Arnaud Bournel, Vincent Delmouly, Philippe Dollfus, Gaëtan F. Tremblay, P. Hesto	2001	16
18	Thermally stimulated currents in organic monomolecular layers Thin Solid Films ·Jean Tanguy, P. Hesto	1974	16
19	Double-heterojunction GaAlInAs/GaInAs bipolar transistor grown by molecular beam epitaxy IEEE Electron Device Letters ·Jean-Luc Pélouard, P. Hesto, J. P. Praseuth, Leon J. Goldstein	1986	15
20	From wave-functions to current-voltage characteristics: overview of a Coulomb blockade device simulator using fundamental physical parameters Journal of Computational Electronics ·Justin See, Philippe Dollfus, S. Galdin, P. Hesto	2006	15

About P. Hesto

P. Hesto is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry and Biomedical Engineering, having authored 70 papers that have together received 794 indexed citations. Recurring topics across this work include Semiconductor materials and devices (41 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers), Semiconductor Quantum Structures and Devices (20 papers), Quantum and electron transport phenomena (16 papers), Semiconductor materials and interfaces (6 papers), Silicon Carbide Semiconductor Technologies (5 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers) and Magnetic properties of thin films (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (396 citations), Electrical and Electronic Engineering (626 citations), Condensed Matter Physics (58 citations), Materials Chemistry (153 citations) and Biomedical Engineering (91 citations). P. Hesto has collaborated with scholars based in France, Germany and Netherlands. Frequent co-authors include Philippe Dollfus, S. Galdin, Arnaud Bournel, Éric Cassan, R. Castagné, Sylvain Barraud, P. Bruno, Marcelo F. Goffman, Claude Pellet and J.P. Bourgoin. Their work appears in journals such as Thin Solid Films, Solid-State Electronics, Journal of Applied Physics, IEEE Transactions on Electron Devices and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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