Naoki Kaneda
Impact in
- Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
-
- Ga2O3 and related materials
Papers in
-
- GaN-based semiconductor devices and materials 23
-
- Silicon Carbide Semiconductor Technologies 12
- Semiconductor materials and devices 11
- Thin-Film Transistor Technologies 2
- Co-authors
- Tomoyoshi Mishima (21 shared papers)Tohru Nakamura (10 shared papers)Kazuki Nomoto (13 shared papers)Yoshitomo Hatakeyama (7 shared papers)Hiroshi Ohta (2 shared papers)Yoshinobu Narita (1 shared paper)Fumimasa Horikiri (2 shared papers)Takehiro Yoshida (1 shared paper)
- Journals
- Japanese Journal of Applied Physics (8 papers)IEEE Electron Device Letters (3 papers)Thin Solid Films (2 papers)Journal of Crystal Growth (1 paper)IEEE Transactions on Electron Devices (1 paper)
- Partner nations
- JapanUnited StatesUnited Kingdom
In The Last Decade
Naoki Kaneda
25 papers receiving 857 citations
Peers
Comparison fields: 5 of 29
- Condensed Matter Physics 843
- Electronic, Optical and Magnetic Materials 418
- Electrical and Electronic Engineering 715
- Atomic and Molecular Physics, and Optics 172
- Materials Chemistry 123
Countries citing papers authored by Naoki Kaneda
This map shows the geographic impact of Naoki Kaneda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Naoki Kaneda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Naoki Kaneda more than expected).
Fields of papers citing papers by Naoki Kaneda
This network shows the impact of papers produced by Naoki Kaneda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Naoki Kaneda. The network helps show where Naoki Kaneda may publish in the future.
Co-authors
The 25 scholars most cited alongside Naoki Kaneda, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 27 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | 2015 | 193 | |
| 2 | 2015 | 160 | |
| 3 | 2011 | 112 | |
| 4 | 2013 | 100 | |
| 5 | 2011 | 79 | |
| 6 | 2015 | 52 | |
| 7 | 2015 | 49 | |
| 8 | 2011 | 28 | |
| 9 | フリースタンディングGaN基板上の1.0kV以上に耐えられるGaN p‐n接合ダイオード | 2011 | 19 |
| 10 | 1991 | 16 | |
| 11 | 2013 | 15 | |
| 12 | 2011 | 12 | |
| 13 | 2013 | 11 | |
| 14 | 2011 | 9 | |
| 15 | 1996 | 8 | |
| 16 | 1997 | 7 | |
| 17 | 2013 | 7 | |
| 18 | Impact of crystal-quality improvement of epitaxial wafers on RF and power switching devices by utilizing VAS-method grown GaN substrates with low-density and uniformly distributed dislocations | 2013 | 6 |
| 19 | 2013 | 5 | |
| 20 | 2013 | 3 |
About Naoki Kaneda
Naoki Kaneda is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 27 papers that have together received 900 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (23 papers), Silicon Carbide Semiconductor Technologies (12 papers), Semiconductor materials and devices (11 papers), Ga2O3 and related materials (8 papers), Semiconductor materials and interfaces (6 papers), Semiconductor Quantum Structures and Devices (3 papers), ZnO doping and properties (3 papers) and Thin-Film Transistor Technologies (2 papers). The work is most often cited by research in Condensed Matter Physics (843 citations), Electronic, Optical and Magnetic Materials (418 citations), Electrical and Electronic Engineering (715 citations), Atomic and Molecular Physics, and Optics (172 citations) and Materials Chemistry (123 citations). Naoki Kaneda has collaborated with scholars based in Japan, United States and United Kingdom. Frequent co-authors include Tomoyoshi Mishima, Tohru Nakamura, Kazuki Nomoto, Yoshitomo Hatakeyama, Hiroshi Ohta, Yoshinobu Narita, Fumimasa Horikiri, Takehiro Yoshida, Akihisa Terano and Mingda Zhu. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Electron Device Letters, Thin Solid Films, Journal of Crystal Growth and IEEE Transactions on Electron Devices.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.