Н. А. Берт

2.0k citations

123 papers · 1.6k · h-index 20

Impact in

Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
Electrical and Electronic Engineering top 5%
- Semiconductor Lasers and Optical Devices
- Advanced Semiconductor Detectors and Materials
- Photonic and Optical Devices
- Semiconductor materials and devices

Papers in

Atomic and Molecular Physics, and Optics 98
- Semiconductor Quantum Structures and Devices 81
- Semiconductor materials and interfaces 35
Electrical and Electronic Engineering 74
- Advanced Semiconductor Detectors and Materials 33
- Semiconductor Lasers and Optical Devices 21
- Semiconductor materials and devices 10

Co-authors: V. M. Ustinov (22 shared papers)Zh. I. Alfërov (17 shared papers)Yu. G. Musikhin (25 shared papers)D. Bimberg (18 shared papers)V. V. Chaldyshev (44 shared papers)N. N. Ledentsov (15 shared papers)A. Yu. Egorov (15 shared papers)A. E. Zhukov (8 shared papers)
Journals: Applied Physics Letters (13 papers)Journal of Crystal Growth (5 papers)Journal of Applied Physics (4 papers)Semiconductor Science and Technology (3 papers)Physica C Superconductivity (1 paper)
Partner nations: Russia Germany United States

In The Last Decade

Н. А. Берт

112 papers receiving 1.5k citations

Peers

Countries citing papers authored by Н. А. Берт

Since Specialization

Citations

This map shows the geographic impact of Н. А. Берт's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Н. А. Берт with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Н. А. Берт more than expected).

Fields of papers citing papers by Н. А. Берт

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Н. А. Берт. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Н. А. Берт. The network helps show where Н. А. Берт may publish in the future.

Co-authors

The 25 scholars most cited alongside Н. А. Берт, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Н. А. Берт Line = papers co-authored together Н. А. Берт links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 123 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm Applied Physics Letters ·V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, A. V. Lunev, B. V. Volovik, I. L. Krestnikov, Yu. G. Musikhin, Н. А. Берт, P. S. Kop’ev, Zh. I. Alfërov, N. N. Ledentsov, D. Bimberg	1999	313
2	Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing Applied Physics Letters ·A. O. Kosogov, P. Werner, U. Gösele, N. N. Ledentsov, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, Н. А. Берт, Zh. I. Alfërov	1996	123
3	Photonic band gaps in 3D ordered fcc silica matrices Physics Letters A ·Vasily N. Astratov, Yu. A. Vlasov, O. Z. Karimov, A. A. Kaplyanskiǐ, Yu. G. Musikhin, Н. А. Берт, V. N. Bogomolov, A. V. Prokofiev	1996	66
4	Low-threshold injection lasers based on vertically coupled quantum dots Journal of Crystal Growth ·V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov, M. V. Maximov, A. F. Tsatsul’nikov, N. Yu. Gordeev, S. V. Zaı̆tsev, Yu. M. Shernyakov, Н. А. Берт, P. S. Kop’ev, Zh. I. Alfërov, N. N. Ledentsov, J. Böhrer, D. Bimberg, A. O. Kosogov, P. Werner, U. Gösele	1997	66
5	Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm Journal of Applied Physics ·A. F. Tsatsul’nikov, A. R. Kovsh, A. E. Zhukov, Yu. M. Shernyakov, Yu. G. Musikhin, V. M. Ustinov, Н. А. Берт, P. S. Kop’ev, Zh. I. Alfërov, A. M. Mintairov, J. L. Merz, N. N. Ledentsov, D. Bimberg	2000	52
6	Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm Applied Physics Letters ·M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, Н. А. Берт, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alfërov, N. N. Ledentsov, D. Bimberg, I. P. Soshnikov, P. Werner	1999	51
7	Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status Semiconductor Science and Technology ·A. E. Zhukov, V. M. Ustinov, A. R. Kovsh, A. Yu. Egorov, N. A. Maleev, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Yu. G. Musikhin, Н. А. Берт, P. S. Kop’ev, D. Bimberg, Zh. I. Alfërov	1999	41
8	Investigation of dislocation loops associated with As–Sb nanoclusters in GaAs Journal of Applied Physics ·V. V. Chaldyshev, A. L. Kolesnikova, Н. А. Берт, А. Е. Романов	2004	36
9	Local stresses induced by nanoscale As–Sb clusters in GaAs matrix Applied Physics Letters ·V. V. Chaldyshev, Н. А. Берт, А. Е. Романов, Alexandra Suvorova, A. L. Kolesnikova, В. В. Преображенский, М. А. Putyato, B. R. Semyagin, P. Werner, N. D. Zakharov, A. Claverie	2002	31
10	Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate Semiconductors ·K. D. Moiseev, Ya. A. Parkhomenko, Е. В. Гущина, A. V. Ankudinov, В. П. Михайлова, Н. А. Берт, Yu. P. Yakovlev	2009	27
11	Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures Applied Physics Letters ·Yu. G. Musikhin, Dagmar Gerthsen, D. A. Bedarev, Н. А. Берт, W. V. Lundin, A. F. Tsatsul’nikov, A. V. Sakharov, A. Usikov, Zh. I. Alfërov, I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg	2002	26
12	Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs Applied Physics Letters ·Н. А. Берт, V. V. Chaldyshev, Alexandra Suvorova, В. В. Преображенский, М. А. Putyato, B. R. Semyagin, P. Werner	1999	26
13	Stress relaxation scenario for buried quantum dots Physical Review B ·V. V. Chaldyshev, Н. А. Берт, A. L. Kolesnikova, А. Е. Романов	2009	26
14	In–Ga intermixing in low-temperature grown GaAs delta doped with In Applied Physics Letters ·Н. А. Берт, V. V. Chaldyshev, Yu. G. Musikhin, Alexandra Suvorova, В. В. Преображенский, М. А. Putyato, B. R. Semyagin, P. Werner	1999	25
15	An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix Semiconductors ·Zh. I. Alfërov, Н. А. Берт, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, A. O. Kosogov, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, М. В. Максимов, A. V. Sakharov, V. M. Ustinov, A. F. Tsapul'Nikov, Yu. M. Shernyakov, D. Bimberg	1996	23
16	Enhanced As–Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs Applied Physics Letters ·V. V. Chaldyshev, Н. А. Берт, Yu. G. Musikhin, Alexandra Suvorova, В. В. Преображенский, М. А. Putyato, B. R. Semyagin, P. Werner, U. Gösele	2001	22
17	Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots Semiconductors ·P. N. Brunkov, Alexandra Suvorova, Н. А. Берт, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, A. F. Tsatsul’nikov, N. N. Ledentsov, P. S. Kop’ev, S. G. Konnikov, L. Eaves, P. S. Main	1998	20
18	Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates Semiconductors ·A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, N. A. Maleev, V. M. Ustinov, B. V. Volovik, М. В. Максимов, A. F. Tsatsul’nikov, N. N. Ledentsov, Yu. M. Shernyakov, A. V. Lunev, Yu. G. Musikhin, Н. А. Берт, P. S. Kop’ev, Zh. I. Alfërov	1999	20
19	Rewritable and Tunable Laser-Induced Optical Gratings in Phase-Change Material Films ACS Applied Materials & Interfaces ·Pavel Trofimov, Irina G. Bessonova, Petr Lazarenko, Demid A. Kirilenko, Н. А. Берт, S. A. Kozyukhin, Ivan Sinev	2021	20
20	Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature Semiconductor Science and Technology ·Н. А. Берт, V. V. Chaldyshev, N. N. Faleev, A. E. Kunitsyn, D. Lubyshev, В. В. Преображенский, B. R. Semyagin, V. V. Tret’yakov	1997	20

About Н. А. Берт

Н. А. Берт is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering and Condensed Matter Physics, having authored 123 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (81 papers), Semiconductor materials and interfaces (35 papers), Advanced Semiconductor Detectors and Materials (33 papers), Semiconductor Lasers and Optical Devices (21 papers), Quantum Dots Synthesis And Properties (19 papers), Nanowire Synthesis and Applications (16 papers), GaN-based semiconductor devices and materials (16 papers) and Semiconductor materials and devices (10 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.3k citations), Electrical and Electronic Engineering (1.1k citations), Condensed Matter Physics (172 citations), Materials Chemistry (559 citations) and Biomedical Engineering (233 citations). Н. А. Берт has collaborated with scholars based in Russia, Germany and United States. Frequent co-authors include V. M. Ustinov, Zh. I. Alfërov, Yu. G. Musikhin, D. Bimberg, V. V. Chaldyshev, N. N. Ledentsov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh and P. S. Kop’ev. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Applied Physics, Semiconductor Science and Technology and Physica C Superconductivity.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Н. А. Берт

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