Kui Dang

2.1k citations

38 papers · 1.7k · 1 hit paper · h-index 18

Impact in

Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials
Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials

Papers in

Condensed Matter Physics 16
- GaN-based semiconductor devices and materials 16
Electronic, Optical and Magnetic Materials 14
- Ga2O3 and related materials 14

Co-authors: Jincheng Zhang (36 shared papers)Hong Yu Zhou (31 shared papers)Yue Hao (20 shared papers)Yanni Zhang (6 shared papers)Zhihong Liu (10 shared papers)Yue Hao (14 shared papers)Zhaoqing Feng (6 shared papers)Mengwei Si (3 shared papers)
Journals: IEEE Electron Device Letters (8 papers)Applied Physics Letters (4 papers)IEEE Transactions on Electron Devices (3 papers)IEEE Journal of the Electron Devices Society (2 papers)Science China Information Sciences (2 papers)
Partner nations: China Saudi Arabia United States

In The Last Decade

Kui Dang

34 papers receiving 1.7k citations

Kui Dang's Hit Papers

align trajectories log scale

Ultra-wide bandgap semiconductor Ga2O3 power diodes 2022 · 544 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2022 Nature Communications

Peers

Countries citing papers authored by Kui Dang

Since Specialization

Citations

This map shows the geographic impact of Kui Dang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kui Dang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kui Dang more than expected).

Fields of papers citing papers by Kui Dang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kui Dang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kui Dang. The network helps show where Kui Dang may publish in the future.

Co-authors

The 25 scholars most cited alongside Kui Dang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Kui Dang Line = papers co-authored together Kui Dang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 38 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Ultra-wide bandgap semiconductor Ga2O3 power diodes Nature Communications ·Jincheng Zhang, Kui Dang, Yanni Zhang, Hu Xiang, Jie Su, Zhihong Liu, Mengwei Si, Jiacheng Gao Hit paper breakdown →	2022	544
2	Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2 IEEE Electron Device Letters ·Zhuangzhuang Hu, Hong Yu Zhou, Qian Feng, Jincheng Zhang, Chunfu Zhang, Kui Dang, Yuncong Cai, Zhaoqing Feng	2018	156
3	Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities IEEE Transactions on Power Electronics ·Yuanjie Lv, Yuangang Wang, Xingchang Fu, Shaobo Dun, Zhaofeng Sun, Hongyu Liu, Xingye Zhou, Xubo Song	2020	151
4	High-Performance Vertical $\beta$ -Ga 2 O 3 Schottky Barrier Diode With Implanted Edge Termination IEEE Electron Device Letters ·Hong Yu Zhou, Qian Feng, Jing Ning, Chunfu Zhang, Peijun Ma, Yue Hao, Jincheng Zhang, Yuanjie Lv	2019	134
5	A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer IEEE Transactions on Power Electronics ·Kui Dang, Jincheng Zhang, Hong Yu Zhou, Sen Huang, Tao Zhang, Zhaoke Bian, Yachao Zhang, Xinhua Wang	2019	99
6	Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage IEEE Electron Device Letters ·Zhuangzhuang Hu, Yuanjie Lv, Chunyong Zhao, Qian Feng, Zhaoqing Feng, Kui Dang, Xusheng Tian, Yachao Zhang	2020	79
7	Lateral $\beta$ -Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV IEEE Journal of the Electron Devices Society ·Zhuangzhuang Hu, Hong Yu Zhou, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Qian Feng, Jincheng Zhang	2018	58
8	A > 3 kV/2.94 m $\Omega\cdot$ cm 2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique IEEE Electron Device Letters ·Tao Zhang, Jinfeng Zhang, Shengrui Xu, Xiaoling Duan, Jing Ning, Yue Hao, Jincheng Zhang, Hong Yu Zhou	2019	58
9	A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V IEEE Electron Device Letters ·Tao Zhang, Jincheng Zhang, Hong Yu Zhou, Tangsheng Chen, Kai Zhang, Zhuangzhuang Hu, Zhaoke Bian, Kui Dang	2018	47
10	Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration IEEE Transactions on Industrial Electronics ·Kui Dang, Jincheng Zhang, Hong Yu Zhou, Shan Yin, Tao Zhang, Jing Ning, Yachao Zhang, Zhaoke Bian	2019	47
11	Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing IEEE Transactions on Electron Devices ·Yanni Zhang, Jincheng Zhang, Zhaoqing Feng, Zhuangzhuang Hu, Jiabo Chen, Kui Dang, Hong Yu Zhou, Yue Hao +2 others	2020	46
12	A 800 V β‐Ga2O3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm−2 physica status solidi (a) ·Zhaoqing Feng, Yuncong Cai, Guangshuo Yan, Zhuangzhuang Hu, Kui Dang, Yanni Zhang, Hongjuan Cheng, Xiaozheng Lian	2019	37
13	High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2 Applied Physics Express ·Tao Zhang, Jincheng Zhang, Hong Yu Zhou, Yachao Zhang, Tangsheng Chen, Kai Zhang, Yi Wang, Kui Dang	2019	36
14	Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing IEEE Electron Device Letters ·Chenlu Wang, Chunxu Su, Sami Alghamdi, Emad Ismat Ghandourah, Zhihong Liu, Xin Feng, Weihang Zhang, Kui Dang	2023	33
15	AlGaN-Channel Gate Injection Transistor on Silicon Substrate With Adjustable 4–7-V Threshold Voltage and 1.3-kV Breakdown Voltage IEEE Electron Device Letters ·Li Zhang, Hong Yu Zhou, Weihang Zhang, Kui Dang, Tao Zhang, Peijun Ma, Xiaohua Ma, Jincheng Zhang	2018	25
16	Leakage mechanism of quasi-vertical GaN Schottky barrier diodes with ultra-low turn-on voltage Applied Physics Express ·Zhaoke Bian, Tao Zhang, Jincheng Zhang, Shenglei Zhao, Hong Yu Zhou, JunShuai Xue, Xiaoling Duan, Yachao Zhang	2019	24
17	Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode Applied Physics Letters ·Chunxu Su, Hong Yu Zhou, Kun Zhang, Chenlu Wang, Sihan Sun, Hehe Gong, Jiandong Ye, Zhihong Liu	2024	23
18	Proposal and Simulation of Ga2O3MOSFET With PN Heterojunction Structure for High-Performance E-Mode Operation IEEE Transactions on Electron Devices ·Kui Dang, Hong Yu Zhou, Jincheng Zhang, Chenlu Wang, Qian Xin, Sami Alghamdi, Zhihong Liu, Qian Feng	2022	19
19	GaN High-Electron-Mobility-Transistor on Free- Standing GaN Substrate With Low Contact Resistance and State-of-the-Art fT × LG Value IEEE Transactions on Electron Devices ·Hanghai Du, Jincheng Zhang, Hong Yu Zhou, Zhihong Liu, Tao Zhang, Kui Dang, Yanni Zhang, Weihang Zhang	2022	15
20	Novel 2000 V Normally-off MOS-HEMTs using AlN/GaN Superlattice Channel IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs ·Ming Xiao, Weihang Zhang, Yuhao Zhang, Hong Yu Zhou, Kui Dang, Jincheng Zhang, Yue Hao	2019	13

About Kui Dang

Kui Dang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Astronomy and Astrophysics and Atomic and Molecular Physics, and Optics, having authored 38 papers that have together received 1.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (16 papers), Ga2O3 and related materials (14 papers), Energy Harvesting in Wireless Networks (7 papers), Wireless Power Transfer Systems (4 papers), Microwave Engineering and Waveguides (3 papers), Advanced Power Amplifier Design (3 papers), Silicon Carbide Semiconductor Technologies (2 papers) and Semiconductor materials and interfaces (1 paper). The work is most often cited by research in Electronic, Optical and Magnetic Materials (1.2k citations), Condensed Matter Physics (329 citations), Nuclear Energy and Engineering (1 citation), Electrical and Electronic Engineering (246 citations) and Atomic and Molecular Physics, and Optics (56 citations). Kui Dang has collaborated with scholars based in China, Saudi Arabia and United States. Frequent co-authors include Jincheng Zhang, Hong Yu Zhou, Yue Hao, Yanni Zhang, Zhihong Liu, Yue Hao, Zhaoqing Feng, Mengwei Si, Hu Xiang and Jie Su. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Journal of the Electron Devices Society and Science China Information Sciences.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Kui Dang

Kui Dang's Hit Papers

Peers

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Fields of papers citing papers by Kui Dang

All Works

About Kui Dang

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