J.C. Lee

2.0k citations

61 papers · 1.6k · h-index 22

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
Materials Chemistry
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 60
- Semiconductor materials and devices 59
- Advancements in Semiconductor Devices and Circuit Design 53
- Ferroelectric and Negative Capacitance Devices 29
- Integrated Circuits and Semiconductor Failure Analysis 24
- Advanced Memory and Neural Computing 2
Materials Chemistry 5
- Electronic and Structural Properties of Oxides 2

Co-authors: R. Nieh (18 shared papers)Rino Choi (31 shared papers)Byoung Hun Lee (13 shared papers)Chang Seok Kang (15 shared papers)Sundararaman Gopalan (10 shared papers)Laegu Kang (8 shared papers)Wenjie Qi (7 shared papers)K. Onishi (9 shared papers)
Journals: IEEE Electron Device Letters (20 papers)IEEE Transactions on Electron Devices (9 papers)Thin Solid Films (1 paper)
Partner nations: United States South Korea Germany

In The Last Decade

J.C. Lee

61 papers receiving 1.5k citations

Peers

Countries citing papers authored by J.C. Lee

Since Specialization

Citations

This map shows the geographic impact of J.C. Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.C. Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.C. Lee more than expected).

Fields of papers citing papers by J.C. Lee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.C. Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.C. Lee. The network helps show where J.C. Lee may publish in the future.

Co-authors

The 25 scholars most cited alongside J.C. Lee, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.C. Lee Line = papers co-authored together J.C. Lee links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 61 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric IEEE Electron Device Letters ·Laegu Kang, Byoung Hun Lee, Wenjie Qi, Yongjoo Jeon, R. Nieh, Sundararaman Gopalan, K. Onishi, J.C. Lee	2000	208
2	Temperature acceleration of time-dependent dielectric breakdown IEEE Transactions on Electron Devices ·R. Moazzami, J.C. Lee, Chenming Hu	1989	127
3	Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs IEEE Transactions on Electron Devices ·K. Onishi, Rino Choi, Chang Seok Kang, Hag‐Ju Cho, Young Hee Kim, R. Nieh, Jeong Hee Han, Siddarth Krishnan, M.S. Akbar, J.C. Lee	2003	100
4	The Electrical and Material Characterization of Hafnium Oxynitride Gate Dielectrics With TaN-Gate Electrode IEEE Transactions on Electron Devices ·Chang Seok Kang, H.-J. Cho, Rino Choi, Y.H. Kim, Chan Kang, Se Jong Rhee, Chang‐Hwan Choi, M.S. Akbar, J.C. Lee	2004	95
5	Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application Byoung Hun Lee, Laegu Kang, Wenjie Qi, R. Nieh, Yongjoo Jeon, Katsunori Onishi, J.C. Lee	2003	88
6	Improvement of surface carrier mobility of HfO/sub 2/ MOSFETs by high-temperature forming gas annealing IEEE Transactions on Electron Devices ·K. Onishi, Chang Seok Kang, Rino Choi, Hag‐Ju Cho, Sundararaman Gopalan, R. Nieh, S. Krishnan, J.C. Lee	2003	87
7	Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer IEEE Electron Device Letters ·Kang Min Ok, Hyoung-sub Kim, Manhong Zhang, Chang-Yong Kang, Se Jong Rhee, Changhwan Choi, Sitaraman Krishnan, Tackhwi Lee, Feng Zhu, Gaurav Thareja, J.C. Lee	2006	72
8	Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing IEEE Transactions on Electron Devices ·R. Nieh, Chang Seok Kang, Hag‐Ju Cho, K. Onishi, Rino Choi, Siddarth Krishnan, Jeong Hee Han, Younghee Kim, M.S. Akbar, J.C. Lee	2003	53
9	MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics Laegu Kang, K. Onishi, Yelim Jeon, Byoung Hun Lee, Chan Kang, Wenjie Qi, R. Nieh, Sundararaman Gopalan, Rino Choi, J.C. Lee	2002	51
10	MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si Wenjie Qi, R. Nieh, Byoung Hun Lee, Laegu Kang, Yongjoo Jeon, K. Onishi, T. Ngai, S. Banerjee, J.C. Lee	2003	44
11	Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 Å-12 Å) Byoung Hun Lee, Rino Choi, Laegu Kang, Sundararaman Gopalan, R. Nieh, K. Onishi, Y. Jeon, Wenjie Qi, C.S. Kang, J.C. Lee	2002	42
12	Charge trapping and detrapping characteristics in hafnium silicate gate stack under static and dynamic stress IEEE Electron Device Letters ·Rino Choi, Se Jong Rhee, J.C. Lee, Byoung Hun Lee, G. Bersuker	2005	41
13	Interfacial defect states in HfO/sub 2/ and ZrO/sub 2/ nMOS capacitors IEEE Electron Device Letters ·S. Mudanai, F. Li, S. Samavedam, Philip J. Tobin, Chang Seok Kang, R. Nieh, J.C. Lee, Leonard F. Register, Sanjay K. Banerjee	2002	36
14	PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- $k$ Dielectrics IEEE Electron Device Letters ·Kyong Taek Lee, Chang Yong Kang, Ook Sang Yoo, Rino Choi, Byoung Hun Lee, J.C. Lee, Hi-Deok Lee, Yoon-Ha Jeong	2008	35
15	Mobility enhancement in surface channel SiGe PMOSFETs with HfO₂ gate dielectrics IEEE Electron Device Letters ·Zhonghai Shi, David Onsongo, K. Onishi, J.C. Lee, Sanjay K. Banerjee	2003	34
16	Thickness dependence of Weibull slopes of HfO₂ gate dielectrics IEEE Electron Device Letters ·Young Hee Kim, K. Onishi, Chang Seok Kang, Hag‐Ju Cho, Rino Choi, Siddarth Krishnan, M.S. Akbar, J.C. Lee	2003	32
17	Reliability characteristics, including NBTI, of polysilicon gate HfO/sub 2/ MOSFET's K. Onishi, Chang Seok Kang, Rino Choi, Hag‐Ju Cho, Sundararaman Gopalan, R. Nieh, E. Dharmarajan, J.C. Lee	2002	29
18	High-quality ultra-thin HfO/sub 2/ gate dielectric MOSFETs with TaN electrode and nitridation surface preparation Rino Choi, Chang Seok Kang, Byoung Hun Lee, K. Onishi, R. Nieh, Sundararaman Gopalan, E. Dharmarajan, J.C. Lee	2002	27
19	Optimized NH<tex>$_3$</tex>Annealing Process for High-Quality HfSiON Gate Oxide IEEE Electron Device Letters ·M.S. Akbar, H.-J. Cho, Rino Choi, Chang Seok Kang, Chang Yong Kang, Chang‐Hwan Choi, Se Jong Rhee, Y.H. Kim, J.C. Lee	2004	27
20	Aggressively scaled ultra thin undoped HfO/sub 2/ gate dielectric (EOT<0.7 nm) with TaN gate electrode using engineered interface layer IEEE Electron Device Letters ·Chang‐Hwan Choi, Chang-Yong Kang, Se Jong Rhee, M.S. Akbar, Siddarth Krishnan, Manhong Zhang, Hyoung-Sub Kim, Tackhwi Lee, Kang Min Ok, Feng Zhu, J.C. Lee	2005	26

About J.C. Lee

J.C. Lee is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 61 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (53 papers), Ferroelectric and Negative Capacitance Devices (29 papers), Integrated Circuits and Semiconductor Failure Analysis (24 papers), Semiconductor materials and interfaces (3 papers), Electronic and Structural Properties of Oxides (2 papers), Advanced Memory and Neural Computing (2 papers) and Copper Interconnects and Reliability (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.5k citations), Materials Chemistry (302 citations), Electronic, Optical and Magnetic Materials (116 citations), Atomic and Molecular Physics, and Optics (155 citations) and Hardware and Architecture (17 citations). J.C. Lee has collaborated with scholars based in United States, South Korea and Germany. Frequent co-authors include R. Nieh, Rino Choi, Byoung Hun Lee, Chang Seok Kang, Sundararaman Gopalan, Laegu Kang, Wenjie Qi, K. Onishi, Yongjoo Jeon and Chenming Hu. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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