J. Yugami

658 citations

64 papers · 488 · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Silicon Carbide Semiconductor Technologies
Computer Networks and Communications
- Advanced Data Storage Technologies

Papers in

Electrical and Electronic Engineering 63
- Semiconductor materials and devices 56
- Advancements in Semiconductor Devices and Circuit Design 38
- Integrated Circuits and Semiconductor Failure Analysis 26
- Ferroelectric and Negative Capacitance Devices 8
- Advanced Memory and Neural Computing 7
- Silicon and Solar Cell Technologies 5
Biomedical Engineering 7

Co-authors: Shigeo Tsujikawa (10 shared papers)Haruki Kume (5 shared papers)R. Yamada (4 shared papers)Toshiyuki Mine (8 shared papers)Ryuta Tsuchiya (5 shared papers)Kenji Watanabe (2 shared papers)T. Onai (5 shared papers)Y. Shimamoto (6 shared papers)
Journals: Japanese Journal of Applied Physics (10 papers)IEEE Transactions on Electron Devices (2 papers)Microelectronics Reliability (1 paper)Superlattices and Microstructures (1 paper)JOURNAL OF CHEMICAL ENGINEERING OF JAPAN (1 paper)
Partner nations: Japan United States United Kingdom

In The Last Decade

J. Yugami

56 papers receiving 465 citations

Peers

Countries citing papers authored by J. Yugami

Since Specialization

Citations

This map shows the geographic impact of J. Yugami's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Yugami with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Yugami more than expected).

Fields of papers citing papers by J. Yugami

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Yugami. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Yugami. The network helps show where J. Yugami may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Yugami, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Yugami Line = papers co-authored together J. Yugami links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 64 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics Shigeo Tsujikawa, Toshiyuki Mine, Kenji Watanabe, Y. Shimamoto, Ryuta Tsuchiya, K. Ohnishi, T. Onai, J. Yugami, S. Kimura	2003	61
2	Analysis of detrap current due to oxide traps to improve flash memory retention R. Yamada, Yuki Mori, Yutaka Okuyama, J. Yugami, Tetsuya NISHIMOTO, Haruki Kume	2002	49
3	Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics Applied Physics Letters ·(unknown), Kazuyoshi Torii, Yasuhiro Shimamoto, Shimpei Tsujikawa, Hirotaka Hamamura, Osamu Tonomura, Toshiyuki Mine, Digh Hisamoto, T. Onai, J. Yugami, Masahiko Hiratani, Shin’ichiro Kimura	2004	35
4	Bit-line clamped sensing multiplex and accurate high voltage generator for quarter-micron flash memories IEEE Journal of Solid-State Circuits ·T. Kawahara, Takashi Kobayashi, Y. Jyouno, Shuji Saeki, Naoki Miyamoto, T. Adachi, Masataka Kato, Akira Sato, J. Yugami, Haruki Kume, K. Kimura	1996	26
5	Experimental evidence for the generation of bulk traps by negative bias temperature stress and their impact on the integrity of direct-tunneling gate dielectrics Shigeo Tsujikawa, Kenji Watanabe, Ryuta Tsuchiya, K. Ohnishi, J. Yugami	2004	26
6	A novel analysis method of threshold voltage shift due to detrap in a multi-level flash memory R. Yamada, Tomoko Sekiguchi, Yutaka Okuyama, J. Yugami, Haruki Kume	2002	24
7	Copper Diffusion Behavior in SiO₂/Si Structure During 400°C Annealing Japanese Journal of Applied Physics ·Kazuyuki Hozawa, J. Yugami	2004	23
8	Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics Microelectronics Reliability ·Shimpei Tsujikawa, J. Yugami	2004	22
9	Evidence for bulk trap generation during NBTI phenomenon in pMOSFETs with ultrathin SiON gate dielectrics IEEE Transactions on Electron Devices ·Shigeo Tsujikawa, J. Yugami	2005	20
10	Fluorine incorporation into HfSiON dielectric for V/sub th/ control and its impact on reliability for poly-Si gate pFET Masashi Inoue, Shigeo Tsujikawa, Masami Mizutani, Keigo Nomura, Takafumi Hayashi, K. Shiga, J. Yugami, J. Tsuchimoto, Y. Ohno, Masahiro Yoneda	2006	19
11	Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO₂ Gate Dielectrics Japanese Journal of Applied Physics ·Motoyuki Sato, Satoshi Kamiyama, Takeo Matsuki, Dai Ishikawa, Tetsuro Ono, Tetsu Morooka, J. Yugami, Kazuto Ikeda, Yuzuru Ohji	2010	13
12	Femto-second CMOS technology with high-k offset spacer and SiN gate dielectric with oxygen-enriched interface Ryuta Tsuchiya, K. Ohnishi, M. Horiuchi, Shigeo Tsujikawa, Y. Shimamoto, Naomi Inada, J. Yugami, Fumio Ootsuka, T. Onai	2003	12
13	Two concerns about NBTI issue: gate dielectric scaling and increasing gate current Shigeo Tsujikawa, Y. Akamatsu, Hiroshi Umeda, J. Yugami	2004	11
14	Inter-Poly SiO2/Si3N4 Capacitor Films 5nm Thick for Deep Submicron LSIs J. Yugami, Toshiyuki Mine, S. Iijima, Atsushi Hiraiwa	1988	9
15	Tunneling Acoustic Microscope Japanese Journal of Applied Physics ·Keiji Takata, J. Yugami, Tsuyoshi Hasegawa, Sumio Hosaka, Shigeyuki Hosoki, Tsutomu Komoda	1989	9
16	True influence of wafer-backside copper contamination during the back-end process on device characteristics Kazuyuki Hozawa, Hisashi Miyazaki, J. Yugami	2003	8
17	Capacitance-Enhanced Stacked-Capacitor with Engraved Storage Electrode for Deep Submicron DRAMs Toshiyuki Mine, S. Iijima, J. Yugami, Kazuki Ohga, T. Morimoto	1989	7
18	Copper Distribution near a SiO₂/Si Interface under Low-Temperature Annealing Japanese Journal of Applied Physics ·Kazuyuki Hozawa, Seiichi Isomae, J. Yugami	2002	7
19	Experimental analysis of gate oxide degradation-existence of neutral trap precursor, single and multiple trap-assisted-tunneling for SILC mechanism R. Yamada, J. Yugami, M. Ohkura	2002	7
20	An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond Shigeo Tsujikawa, Toshiyuki Mine, Y. Shimamoto, Osamu Tonomura, Ryuta Tsuchiya, K. Ohnishi, H. Hamamura, Kazuyoshi Torii, T. Onai, J. Yugami	2003	7

About J. Yugami

J. Yugami is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 64 papers that have together received 488 indexed citations. Recurring topics across this work include Semiconductor materials and devices (56 papers), Advancements in Semiconductor Devices and Circuit Design (38 papers), Integrated Circuits and Semiconductor Failure Analysis (26 papers), Ferroelectric and Negative Capacitance Devices (8 papers), Advanced Memory and Neural Computing (7 papers), Silicon and Solar Cell Technologies (5 papers), Metal and Thin Film Mechanics (4 papers) and Semiconductor materials and interfaces (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (452 citations), Computer Networks and Communications (49 citations), Atomic and Molecular Physics, and Optics (56 citations), Materials Chemistry (72 citations) and Electronic, Optical and Magnetic Materials (28 citations). J. Yugami has collaborated with scholars based in Japan, United States and United Kingdom. Frequent co-authors include Shigeo Tsujikawa, Haruki Kume, R. Yamada, Toshiyuki Mine, Ryuta Tsuchiya, Kenji Watanabe, T. Onai, Y. Shimamoto, Yuki Mori and Tetsuya NISHIMOTO. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Transactions on Electron Devices, Microelectronics Reliability, Superlattices and Microstructures and JOURNAL OF CHEMICAL ENGINEERING OF JAPAN.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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