J. Ramer

1.3k citations

38 papers · 1.1k · h-index 18

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 34
- GaN-based semiconductor devices and materials 34
Electrical and Electronic Engineering 18
- Semiconductor materials and devices 15
- Plasma Diagnostics and Applications 3

Co-authors: S. D. Hersee (11 shared papers)E. Armour (15 shared papers)D. I. Florescu (13 shared papers)V. Merai (12 shared papers)M. Schurman (7 shared papers)L. F. Lester (5 shared papers)Ian T. Ferguson (6 shared papers)J.C. Zolper (4 shared papers)
Journals: Applied Physics Letters (11 papers)Journal of Crystal Growth (5 papers)Journal of Electronic Materials (3 papers)Journal of Applied Physics (2 papers)MRS Internet Journal of Nitride Semiconductor Research (1 paper)
Partner nations: United States Israel

In The Last Decade

J. Ramer

36 papers receiving 1.1k citations

Peers

Countries citing papers authored by J. Ramer

Since Specialization

Citations

This map shows the geographic impact of J. Ramer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Ramer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Ramer more than expected).

Fields of papers citing papers by J. Ramer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Ramer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Ramer. The network helps show where J. Ramer may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Ramer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Ramer Line = papers co-authored together J. Ramer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 38 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy Applied Physics Letters ·D. I. Florescu, V. M. Asnin, Fred H. Pollak, Andrew M. Jones, J. Ramer, M. Schurman, Ian T. Ferguson	2000	101
2	Nonalloyed Ti/Al Ohmic contacts to n-type GaN using high-temperature premetallization anneal Applied Physics Letters ·L. F. Lester, Judith M. Brown, J. Ramer, L. Zhang, S. D. Hersee, J.C. Zolper	1996	95
3	Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition Journal of Applied Physics ·S. M. Ting, J. Ramer, D. I. Florescu, V. Merai, Bensely Albert, A. Parekh, D. S. Lee, Dongzhu Lu, D. V. Christini, L. Liu, E. Armour	2003	92
4	Morphology and photoluminescence improvements from high-temperature rapid thermal annealing of GaN Applied Physics Letters ·J.C. Zolper, Mary H. Crawford, A. J. Howard, J. Ramer, S. D. Hersee	1996	87
5	Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire Applied Physics Letters ·D. I. Florescu, S. M. Ting, J. Ramer, D. S. Lee, V. Merai, A. Parkeh, Dongzhu Lu, E. Armour, Leonid Chernyak	2003	83
6	Influence of oxygen on the activation of p-type GaN Applied Physics Letters ·B. A. Hull, Suzanne E. Mohney, Hari Venugopalan, J. Ramer	2000	79
7	High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope Applied Physics Letters ·V. M. Asnin, Fred H. Pollak, J. Ramer, M. Schurman, Ian T. Ferguson	1999	72
8	Temperature Behavior of Pt/Au Ohmic Contacts to p-GaN MRS Proceedings ·D. King, L. Zhang, J. Ramer, S. D. Hersee, L. F. Lester	1997	60
9	The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire Journal of Electronic Materials ·S. D. Hersee, J. Ramer, Kefei Zheng, C. Kranenberg, Kevin J. Malloy, Michael A. Banas, Mark S. Goorsky	1995	53
10	Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar Applied Physics Letters ·L. Zhang, J. Ramer, J.J. Brown, Kang Zheng, L. F. Lester, S. D. Hersee	1996	48
11	Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors Journal of Crystal Growth ·L. Kadinski, V. Merai, A. Parekh, J. Ramer, E. Armour, R. A. Stall, A. Gurary, A.O. Galyukov, Yu.N. Makarov	2003	48
12	Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors Journal of Crystal Growth ·Bojan Mitrovic, A. Parekh, J. Ramer, V. Merai, E. Armour, L. Kadinski, A. Gurary	2006	46
13	Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire Applied Physics Letters ·M. Pophristić, Frederick H. Long, M. Schurman, J. Ramer, Ian T. Ferguson	1999	43
14	The Microstructure of Metalorganic-Chemical-Vapor-Deposition GaN on Sapphire MRS Bulletin ·S. D. Hersee, J. Ramer, Kevin J. Malloy	1997	36
15	Sapphire substrate misorientation effects on GaN nucleation layer properties Journal of Crystal Growth ·Dongzhu Lu, D. I. Florescu, D.S. Lee, V. Merai, J. Ramer, A. Parekh, E. Armour	2004	31
16	In situ metrology advances in MOCVD growth of GaN-based materials Journal of Crystal Growth ·M. V. Belousov, B. Volf, J. Ramer, E. Armour, A. Gurary	2004	30
17	Advanced characterization studies of sapphire substrate misorientation effects on GaN-based LED device development physica status solidi (a) ·Dongzhu Lu, D. I. Florescu, D. S. Lee, V. Merai, A. Parekh, J. Ramer, Shiping Guo, E. Armour	2003	23
18	Observation of subsurface monolayer thickness fluctuations in InGaN∕GaN quantum wells by scanning capacitance microscopy and spectroscopy Applied Physics Letters ·Xing Zhou, Edward T. Yu, D. I. Florescu, J. Ramer, Dong‐Seon Lee, E. Armour	2004	19
19	In Ga N ∕ Ga N single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions Applied Physics Letters ·D. I. Florescu, J. Ramer, D. S. Lee, E. Armour	2004	16
20	Edge-emitting electroluminescence polarization investigation of InGaN/GaN light-emitting diodes grown by metal-organic chemical vapor deposition on sapphire (0001) Journal of Electronic Materials ·D. I. Florescu, D. S. Lee, S. M. Ting, J. Ramer, E. Armour	2003	11

About J. Ramer

J. Ramer is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Mechanics of Materials and Electronic, Optical and Magnetic Materials, having authored 38 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (15 papers), Ga2O3 and related materials (12 papers), Metal and Thin Film Mechanics (11 papers), Semiconductor Quantum Structures and Devices (11 papers), ZnO doping and properties (8 papers), Plasma Diagnostics and Applications (3 papers) and Nanowire Synthesis and Applications (2 papers). The work is most often cited by research in Condensed Matter Physics (962 citations), Electronic, Optical and Magnetic Materials (366 citations), Materials Chemistry (546 citations), Atomic and Molecular Physics, and Optics (330 citations) and Mechanics of Materials (240 citations). J. Ramer has collaborated with scholars based in United States and Israel. Frequent co-authors include S. D. Hersee, E. Armour, D. I. Florescu, V. Merai, M. Schurman, L. F. Lester, Ian T. Ferguson, J.C. Zolper, V. M. Asnin and Fred H. Pollak. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Electronic Materials, Journal of Applied Physics and MRS Internet Journal of Nitride Semiconductor Research.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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