J. Moers

634 citations

40 papers · 528 · h-index 14

Impact in

Structural Biology top 10%
Bioengineering top 10%
- Analytical Chemistry and Sensors

Papers in

Electrical and Electronic Engineering 35
- Advancements in Semiconductor Devices and Circuit Design 20
- Semiconductor materials and devices 19
- Integrated Circuits and Semiconductor Failure Analysis 12
- Silicon Carbide Semiconductor Technologies 6
- Advanced Semiconductor Detectors and Materials 3
Atomic and Molecular Physics, and Optics 14
- Semiconductor Quantum Structures and Devices 12
- Semiconductor materials and interfaces 3

Co-authors: H. Lüth (17 shared papers)Detlev Grützmacher (14 shared papers)Andreas Offenhäusser (4 shared papers)Sven Ingebrandt (3 shared papers)P. Kordoš (10 shared papers)Thomas Schäpers (1 shared paper)Mihail Ion Lepsa (2 shared papers)L. Vescan (9 shared papers)
Journals: Applied Physics Letters (4 papers)Microelectronic Engineering (4 papers)Thin Solid Films (4 papers)Solid-State Electronics (2 papers)Electronics Letters (2 papers)
Partner nations: Germany Netherlands Austria

In The Last Decade

J. Moers

37 papers receiving 516 citations

Peers

Countries citing papers authored by J. Moers

Since Specialization

Citations

This map shows the geographic impact of J. Moers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Moers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Moers more than expected).

Fields of papers citing papers by J. Moers

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Moers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Moers. The network helps show where J. Moers may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Moers, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Moers Line = papers co-authored together J. Moers links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 40 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Hall effect measurements on InAs nanowires Applied Physics Letters ·Ch. Blömers, Thomas Grap, Mihail Ion Lepsa, J. Moers, St. Trellenkamp, Detlev Grützmacher, H. Lüth, Thomas Schäpers	2012	81
2	X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor Nano Letters ·N. Hrauda, Jianjun Zhang, E. Wintersberger, Tanja Etzelstorfer, Bernhard Mandl, J. Stangl, Dina Carbone, V. Holý, Vladimir Jovanović, C. Biasotto, Lis K. Nanver, J. Moers, Detlev Grützmacher, G. Bauer	2011	61
3	N-Channel field-effect transistors with floating gates for extracellular recordings Biosensors and Bioelectronics ·Sven Meyburg, Michael Goryll, J. Moers, Sven Ingebrandt, Simone Böcker-Meffert, H. Lüth, Andreas Offenhäusser	2005	43
4	n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility IEEE Electron Device Letters ·V D Jovanovi, C. Biasotto, Lis K. Nanver, J. Moers, D. Grtzmacher, J. Gerharz, Gregor Mußler, Johan van der Cingel, J J Zhang, G. Bauer, Oliver G. Schmidt, Leo Miglio	2010	36
5	Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography Thin Solid Films ·Sascha Brose, Serhiy Danylyuk, Larissa Juschkin, Carsten Dittberner, K. Bergmann, J. Moers, G. Panaitov, St. Trellenkamp, Peter Loosen, Detlev Grützmacher	2012	29
6	Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement Applied Physics Letters ·M. Mikulics, P. Kordoš, D. Gregušová, Zdeněk Sofer, A. Winden, St. Trellenkamp, J. Moers, Joachim Mayer, H. Hardtdegen	2021	26
7	Turning the world vertical: MOSFETs with current flow perpendicular to the wafer surface Applied Physics A ·J. Moers	2007	25
8	Patterning of 25-nm-wide silicon webs with an aspect ratio of 13 Microelectronic Engineering ·St. Trellenkamp, J. Moers, A. van der Hart, P. Kordoš, H. Lüth	2003	24
9	Advanced CMOS process for floating gate field-effect transistors in bioelectronic applications Sensors and Actuators B Chemical ·Sven Meyburg, Regina Stockmann, J. Moers, Andreas Offenhäusser, Sven Ingebrandt	2007	21
10	Selectively grown vertical Si- p MOS transistorwith short channel lengths Electronics Letters ·D. Behammer, L. Vescan, Roger Loo, J. Moers, A. Mück, H. Lüth, T. Grabolla	1996	21
11	Single cell recordings with pairs of complementary transistors Applied Physics Letters ·Sven Meyburg, Günter Wrobel, Regina Stockmann, J. Moers, Sven Ingebrandt, Andreas Offenhäusser	2006	16
12	Selectively grown vertical Si MOS transistor with reduced overlap capacitances Thin Solid Films ·D Klaes, J. Moers, A. Tönnesmann, S. Wickenhäuser, L. Vescan, M. Marso, T. Grabolla, Michael Grimm, H. Lüth	1998	16
13	Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth Solid-State Electronics ·J. Moers, D Klaes, A. Tönnesmann, L. Vescan, S. Wickenhäuser, T. Grabolla, M. Marso, P. Kordoš, H. Lüth	1999	15
14	Integration of MOSFETs with SiGe dots as stressor material Solid-State Electronics ·Lis K. Nanver, Vladimir Jovanović, C. Biasotto, J. Moers, Detlev Grützmacher, J. J. Zhang, N. Hrauda, M. Stoffel, Fabio Pezzoli, Oliver G. Schmidt, Leo Miglio, Hans Kosina, Anna Marzegalli, Guglielmo Vastola, Gregor Mußler, J. Stangl, G. Bauer, Johan van der Cingel, Emiliano Bonera	2011	14
15	Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S.M. Kluth, David Álvarez, St. Trellenkamp, J. Moers, S. Mantl, Johannes Kretz, W. Vandervorst	2004	10
16	Band offsets at heavily strained III - V interfaces Journal of Physics D Applied Physics ·C. Ohler, A. Förster, J. Moers, Colin Daniels, H. Lüth	1997	10
17	Giant mesoscopic photoconductance fluctuations in Ge/Si quantum dot system Applied Physics Letters ·N. P. Stepina, E.S. Koptev, А. В. Двуреченский, А. И. Никифоров, J. Gerharz, J. Moers, D. Gruetzmacher	2011	8
18	Top contacts for vertical double-gate MOSFETs Microelectronic Engineering ·J. Moers, St. Trellenkamp, Michael Goryll, M. Marso, A. van der Hart, S. Hogg, S. Mantl, P. Kordoš, H. Lüth	2002	8
19	Vertical p-channel double-gate MOSFETs JuSER (Forschungszentrum Jülich) ·J. Moers, Stefan Trellenkamp, A. van der Hart, Michael Goryll, S. Mantl, P. Kordoš, H. Lüth	2004	7
20	Self‐assembled GaN nanostructures by dry etching and their optical properties physica status solidi (a) ·Anna Haab, M. Mikulics, A. Winden, Sally Voigt, Martina von der Ahe, J. Moers, K. Wirtz, T. Stoïca, Detlev Grützmacher, H. Hardtdegen	2012	6

About J. Moers

J. Moers is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Condensed Matter Physics and Cellular and Molecular Neuroscience, having authored 40 papers that have together received 528 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (20 papers), Semiconductor materials and devices (19 papers), Integrated Circuits and Semiconductor Failure Analysis (12 papers), Semiconductor Quantum Structures and Devices (12 papers), Nanowire Synthesis and Applications (8 papers), Silicon Carbide Semiconductor Technologies (6 papers), Semiconductor materials and interfaces (3 papers) and Advanced Semiconductor Detectors and Materials (3 papers). The work is most often cited by research in Structural Biology (19 citations), Bioengineering (47 citations), Electrical and Electronic Engineering (380 citations), Atomic and Molecular Physics, and Optics (177 citations) and Biomedical Engineering (229 citations). J. Moers has collaborated with scholars based in Germany, Netherlands and Austria. Frequent co-authors include H. Lüth, Detlev Grützmacher, Andreas Offenhäusser, Sven Ingebrandt, P. Kordoš, Thomas Schäpers, Mihail Ion Lepsa, L. Vescan, Lis K. Nanver and Michael Goryll. Their work appears in journals such as Applied Physics Letters, Microelectronic Engineering, Thin Solid Films, Solid-State Electronics and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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