J. E. Williams

529 citations

23 papers · 416 · h-index 11

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
Electrical and Electronic Engineering
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Semiconductor materials and devices
- Advanced Semiconductor Detectors and Materials
- Chalcogenide Semiconductor Thin Films

Papers in

Atomic and Molecular Physics, and Optics 19
- Semiconductor Quantum Structures and Devices 15
- Semiconductor materials and interfaces 2
Electrical and Electronic Engineering 16
- Semiconductor Lasers and Optical Devices 9
- Solid State Laser Technologies 3
- Advanced Semiconductor Detectors and Materials 3
- Semiconductor materials and devices 3
- Photonic and Optical Devices 3

Co-authors: P. Gavrilovič (16 shared papers)Kathleen Meehan (14 shared papers)W. Stutius (11 shared papers)John F. J. Todd (1 shared paper)N. Holonyak (10 shared papers)S. Mahajan (2 shared papers)M. A. Shahid (2 shared papers)K. C. Hsieh (4 shared papers)
Journals: Applied Physics Letters (11 papers)Journal of Crystal Growth (1 paper)Journal of Electronic Materials (1 paper)Frontiers in Immunology (1 paper)Electronics Letters (1 paper)
Partner nations: United States United Kingdom Taiwan

In The Last Decade

J. E. Williams

23 papers receiving 393 citations

Peers

Countries citing papers authored by J. E. Williams

Since Specialization

Citations

This map shows the geographic impact of J. E. Williams's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. E. Williams with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. E. Williams more than expected).

Fields of papers citing papers by J. E. Williams

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. E. Williams. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. E. Williams. The network helps show where J. E. Williams may publish in the future.

Co-authors

The 25 scholars most cited alongside J. E. Williams, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. E. Williams Line = papers co-authored together J. E. Williams links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 23 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Dynamic mass spectrometry D. Price, J. E. Williams, John F. J. Todd	1970	68
2	Disordering of the ordered structure in MOCVD-grown GaInP and AlGaInP by impurity diffusion and thermal annealing Journal of Crystal Growth ·P. Gavrilovič, F. P. Dabkowski, Kathleen Meehan, J. E. Williams, W. Stutius, K. C. Hsieh, N. Holonyak, M. A. Shahid, S. Mahajan	1988	60
3	Disordering of the ordered structure in metalorganic chemical vapor deposition grown Ga0.5In0.5P on (001) GaAs substrates by zinc diffusion Applied Physics Letters ·F. P. Dabkowski, P. Gavrilovič, Kathleen Meehan, W. Stutius, J. E. Williams, M. A. Shahid, S. Mahajan	1988	49
4	Continuous operation of high-power (200 mW) strained-layer Ga _1−x In _x As/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm Electronics Letters ·W. Stutius, P. Gavrilovič, J. E. Williams, Kathleen Meehan, J.H. Zarrabi	1988	38
5	Low-threshold disorder-defined buried heterostructure strained-layer AlyGa1−yAs-GaAs-InxGa1−xAs quantum well lasers (λ∼910 nm) Applied Physics Letters ·J. S. Major, L. J. Guido, K. C. Hsieh, N. Holonyak, W. Stutius, P. Gavrilovič, J. E. Williams	1989	38
6	Band gap of ‘‘completely disordered’’ Ga0.52In0.48P Applied Physics Letters ·M. C. DeLong, D. J. Mowbray, R. A. Hogg, M. S. Skolnick, J. E. Williams, Kathleen Meehan, Sarah Kurtz, J. M. Olson, Richard Schneider, Maw-Kuen Wu, M. Hopkinson	1995	33
7	High-power, single-frequency diode-pumped Nd:YAG microcavity lasers at 1.3 μm Applied Physics Letters ·P. Gavrilovič, Maggie O’Neill, J.H. Zarrabi, Shiv Prakash Singh, J. E. Williams, W.H. Grodkiewicz, A.J. Bruce	1994	21
8	High power AlGaAs-GaAs visible diode lasers IEEE Photonics Technology Letters ·P. Tihanyi, F. Jain, Michael J. Robinson, J.E. Dixon, J. E. Williams, Kathleen Meehan, Maggie O’Neill, L. S. Heath, D. M. Beyea	1994	20
9	High-power disorder-defined coupled stripe AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers Applied Physics Letters ·J. S. Major, D. C. Hall, L. J. Guido, N. Holonyak, P. Gavrilovič, Kathleen Meehan, J. E. Williams, W. Stutius	1989	17
10	Phase 1 pilot study of RRx-001 + nivolumab in patients with advanced metastatic cancer (PRIMETIME) Frontiers in Immunology ·Tony Reid, Bryan Oronsky, Scott Caroen, Mary Quinn, J. E. Williams, Pedro Cabrales, Nacer Abrouk	2023	14
11	Broadband long-wavelength operation (9700 Å≳λ≳8700 Å) of AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers in an external grating cavity Applied Physics Letters ·D. C. Hall, J. S. Major, N. Holonyak, P. Gavrilovič, Kathleen Meehan, W. Stutius, J. E. Williams	1989	13
12	Coupled-stripe in-phase operation of planar native-oxide index-guided AlyGa1−yAs-GaAs-InxGa1−xAs quantum-well heterostructure laser arrays Applied Physics Letters ·F. A. Kish, S. J. Caracci, N. Holonyak, P. Gavrilovič, Kathleen Meehan, J. E. Williams	1992	9
13	High performance AlyGa1−yAs-GaAs-lrxGa1−xAs quantum well lasers defined by silicon-oxygen impurity-induced layer disordering Journal of Electronic Materials ·J. S. Major, L. J. Guido, N. Holonyak, K. C. Hsieh, E. J. Vesely, D. W. Nam, D. C. Hall, J. E. Baker, P. Gavrilovič, Kathleen Meehan, W. Stutius, J. E. Williams	1990	8
14	Zn disordering of a Ga0.5In0.5P-(AlxGa1−x)0.5In0.5P quantum well heterostructure grown by metalorganic chemical vapor deposition Applied Physics Letters ·Kathleen Meehan, F. P. Dabkowski, P. Gavrilovič, J. E. Williams, W. Stutius, K. C. Hsieh, N. Holonyak	1989	7
15	Native-oxide coupled-stripe AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers Applied Physics Letters ·T. A. Richard, F. A. Kish, N. Holonyak, John M. Dallesasse, K. C. Hsieh, M. J. Ries, P. Gavrilovič, Kathleen Meehan, J. E. Williams	1991	4
16	Variable resonator (variable Q) photopumped phonon-assisted quantum well laser operation Applied Physics Letters ·N. Holonyak, D. W. Nam, E. J. Vesely, L. J. Guido, P. Gavrilovič, Kathleen Meehan, W. Stutius, J. E. Williams	1990	3
17	Narrow far fields from extended-window broad-area lasers Applied Physics Letters ·Robert J. Lang, Siamak Forouhar, Jim Cser, J. Katz, P. Gavrilovič, J. E. Williams, W. Stutius, Aland K. Chin	1988	3
18	CW high power single-lobed far-field operation of long-cavity AlGaAs-GaAs single-quantum-well laser diodes grown by MOCVD IEEE Journal of Quantum Electronics ·P. Gavrilovič, F.N. Timofeev, T. Haw, J. E. Williams	1991	3
19	Phonon-assisted stimulated emission in strained-layer AlyGa1−yAs-GaAs-InxGa1−xAs quantum-well heterostructures Journal of Applied Physics ·D. W. Nam, N. Holonyak, K. C. Hsieh, P. Gavrilovič, Kathleen Meehan, W. Stutius, J. E. Williams	1989	3
20	TGF-β: The Apex Predator of Immune Checkpoints Future Oncology ·Bryan Oronsky, Pedro Cabrales, (unknown), Scott Caroen, Meaghan Stirn, J. E. Williams, Tony R. Reid	2023	2

About J. E. Williams

J. E. Williams is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Spectroscopy, Materials Chemistry and Oncology, having authored 23 papers that have together received 416 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (15 papers), Semiconductor Lasers and Optical Devices (9 papers), Spectroscopy and Laser Applications (6 papers), Solid State Laser Technologies (3 papers), Advanced Semiconductor Detectors and Materials (3 papers), Semiconductor materials and devices (3 papers), Photonic and Optical Devices (3 papers) and Semiconductor materials and interfaces (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (301 citations), Electrical and Electronic Engineering (289 citations), Spectroscopy (71 citations), Acoustics and Ultrasonics (3 citations) and Analytical Chemistry (20 citations). J. E. Williams has collaborated with scholars based in United States, United Kingdom and Taiwan. Frequent co-authors include P. Gavrilovič, Kathleen Meehan, W. Stutius, John F. J. Todd, N. Holonyak, S. Mahajan, M. A. Shahid, K. C. Hsieh, J. S. Major and L. J. Guido. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Electronic Materials, Frontiers in Immunology and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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