J. B. Posthill

1.7k citations

91 papers · 1.4k · 1 hit paper · h-index 21

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Materials Chemistry top 5%
- Diamond and Carbon-based Materials Research

Papers in

Electrical and Electronic Engineering 61
- Semiconductor materials and devices 34
- Chalcogenide Semiconductor Thin Films 11
- Silicon and Solar Cell Technologies 9
Materials Chemistry 46
- Diamond and Carbon-based Materials Research 26

Co-authors: R. J. Markunas (41 shared papers)R. A. Rudder (32 shared papers)Zlatko Sitar (1 shared paper)Michael J. Paisley (1 shared paper)R. F. Davis (2 shared papers)T. P. Humphreys (36 shared papers)D.P. Malta (23 shared papers)G. G. Fountain (14 shared papers)
Journals: Applied Physics Letters (18 papers)Journal of Applied Physics (6 papers)Electronics Letters (6 papers)Japanese Journal of Applied Physics (4 papers)Journal of materials research/Pratt's guide to venture capital sources (2 papers)
Partner nations: United States Canada Germany

In The Last Decade

J. B. Posthill

83 papers receiving 1.3k citations

J. B. Posthill's Hit Papers

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Growth of cubic phase gallium nitride by modified molecular-beam epitaxy 1989 · 298 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1989 Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Peers

Countries citing papers authored by J. B. Posthill

Since Specialization

Citations

This map shows the geographic impact of J. B. Posthill's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. B. Posthill with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. B. Posthill more than expected).

Fields of papers citing papers by J. B. Posthill

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. B. Posthill. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. B. Posthill. The network helps show where J. B. Posthill may publish in the future.

Co-authors

The 25 scholars most cited alongside J. B. Posthill, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. B. Posthill Line = papers co-authored together J. B. Posthill links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 91 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Growth of cubic phase gallium nitride by modified molecular-beam epitaxy Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Michael J. Paisley, Zlatko Sitar, J. B. Posthill, R. F. Davis Hit paper breakdown →	1989	298
2	Single-crystal diamond plate liftoff achieved by ion implantation and subsequent annealing Applied Physics Letters ·N.R. Parikh, John Hunn, E. McGucken, M. L. Swanson, C. W. White, R. A. Rudder, D.P. Malta, J. B. Posthill, R. J. Markunas	1992	122
3	On the feasibility of growing dilute CxSi1−x epitaxial alloys Applied Physics Letters ·J. B. Posthill, R. A. Rudder, S. V. Hattangady, G. G. Fountain, R. J. Markunas	1990	68
4	Direct deposition of polycrystalline diamond films on Si(100) without surface pretreatment Applied Physics Letters ·R. A. Rudder, G. Hudson, J. B. Posthill, R. E. Thomas, R. J. Markunas	1991	57
5	Energy Harvesting for Electronics with Thermoelectric Devices using Nanoscale Materials R. Venkatasubramanian, Cynthia Watkins, David L. Stokes, J. B. Posthill, Chris Caylor	2007	43
6	Chemical vapor deposition of diamond films from water vapor rf-plasma discharges Applied Physics Letters ·R. A. Rudder, G. Hudson, J. B. Posthill, R. E. Thomas, R. C. Hendry, D.P. Malta, R. J. Markunas, T. P. Humphreys, R. J. Nemanich	1992	37
7	The role of atomic hydrogen and its influence on the enhancement of secondary electron emission from C(001) surfaces Applied Physics Letters ·T. P. Humphreys, R. E. Thomas, D.P. Malta, J. B. Posthill, M. J. Mantini, R. A. Rudder, G. Hudson, R. J. Markunas, C. Pettenkofer	1997	36
8	I n s i t u cleaning of GaAs surfaces using hydrogen dissociated with a remote noble-gas discharge Journal of Applied Physics ·S. V. Hattangady, R. A. Rudder, M. J. Mantini, G. G. Fountain, J. B. Posthill, R. J. Markunas	1990	30
9	Matrix and interfacial precipitation in the W-Ni-Fe system Metallurgical Transactions A ·J. B. Posthill, D. V. Edmonds	1986	27
10	Secondary electron emission enhancement and defect contrast from diamond following exposure to atomic hydrogen Applied Physics Letters ·D.P. Malta, J. B. Posthill, T. P. Humphreys, R. E. Thomas, G. G. Fountain, R. A. Rudder, G. Hudson, M. J. Mantini, R. J. Markunas	1994	27
11	Low-defect-density germanium on silicon obtained by a novel growth phenomenon Applied Physics Letters ·D.P. Malta, J. B. Posthill, R. J. Markunas, T. P. Humphreys	1992	26
12	Organometallic vapor-phase-epitaxial growth and characterization of ZnGeAs2 on GaAs Journal of Applied Physics ·Glenn S. Solomon, M. L. Timmons, J. B. Posthill	1989	26
13	Thermal CVD of homoepitaxial diamond using CF ₄ and F ₂ Electronics Letters ·R. A. Rudder, J. B. Posthill, R. J. Markunas	1989	25
14	Precipitation at Tungsten/Tungsten Interfaces in Tungsten–Nickel–Iron Heavy Alloys Powder Metallurgy ·J. B. Posthill, M. C. Hogwood, D. V. Edmonds	1986	25
15	Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy Applied Physics Letters ·J. B. Posthill, J. C. L. Tarn, Kalyan Das, T. P. Humphreys, N.R. Parikh	1988	23
16	High quality GaAs on Si using Si0.04Ge0.96/Ge buffer layers Journal of Crystal Growth ·R. Venkatasubramanian, M. L. Timmons, J. B. Posthill, B. M. Keyes, R. K. Ahrenkiel	1991	23
17	High Temperature Rectifying Contacts Using Heteroepitaxial Ni Films on Semiconducting Diamond Japanese Journal of Applied Physics ·T. P. Humphreys, John V. Labrasca, R. J. Nemanich, K. Das, J. B. Posthill	1991	23
18	Organometallic chemical vapor deposition of epitaxial ZnGeP2 films on (001) GaP substrates Journal of Crystal Growth ·G. C. Xing, K. J. Bachmann, Glenn S. Solomon, J. B. Posthill, M. L. Timmons	1989	22
19	Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates Applied Physics Letters ·T. P. Humphreys, C. J. Miner, J. B. Posthill, Kaustav K. Das, M. K. Summerville, R. J. Nemanich, C. A. Sukow, N.R. Parikh	1989	21
20	Microstructural and Optical Characterization of GaN Films Grown by PECVD on (0001) Sapphire Substrates MRS Proceedings ·T. P. Humphreys, C. A. Sukow, R. J. Nemanich, J. B. Posthill, R. A. Rudder, S. V. Hattangady, R. J. Markunas	1989	21

About J. B. Posthill

J. B. Posthill is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Mechanics of Materials and Biomedical Engineering, having authored 91 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (34 papers), Diamond and Carbon-based Materials Research (26 papers), Semiconductor Quantum Structures and Devices (25 papers), Semiconductor materials and interfaces (21 papers), Metal and Thin Film Mechanics (16 papers), Chalcogenide Semiconductor Thin Films (11 papers), Silicon and Solar Cell Technologies (9 papers) and GaN-based semiconductor devices and materials (8 papers). The work is most often cited by research in Condensed Matter Physics (354 citations), Materials Chemistry (780 citations), Atomic and Molecular Physics, and Optics (451 citations), Mechanics of Materials (326 citations) and Electrical and Electronic Engineering (730 citations). J. B. Posthill has collaborated with scholars based in United States, Canada and Germany. Frequent co-authors include R. J. Markunas, R. A. Rudder, Zlatko Sitar, Michael J. Paisley, R. F. Davis, T. P. Humphreys, D.P. Malta, G. G. Fountain, G. Hudson and R. E. Thomas. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Electronics Letters, Japanese Journal of Applied Physics and Journal of materials research/Pratt's guide to venture capital sources.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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