Feng Yun
About
Feng Yun has authored 128 papers that have received a total of 2.4k indexed citations.
This includes 96 papers in Condensed Matter Physics, 65 papers in Materials Chemistry and 58 papers in Electronic, Optical and Magnetic Materials. The topics of these papers are GaN-based semiconductor devices and materials (96 papers), ZnO doping and properties (57 papers) and Ga2O3 and related materials (53 papers). Feng Yun is often cited by papers focused on GaN-based semiconductor devices and materials (96 papers), ZnO doping and properties (57 papers) and Ga2O3 and related materials (53 papers) and collaborates with scholars based in China, United States and United Kingdom. Feng Yun's co-authors include H. Morkoç̌, M. A. Reshchikov, Daming Huang, Paolo Visconti and H. Morkoç and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Advanced Functional Materials.
In The Last Decade
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