F. B. McLean

5.4k citations
66 papers · 4.6k · 2 hit papers · h-index 32

Impact in

    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Radiation Effects in Electronics
    • Integrated Circuits and Semiconductor Failure Analysis
    • Silicon Carbide Semiconductor Technologies
    • Advanced Memory and Neural Computing
    • Silicon and Solar Cell Technologies

Papers in

F. B. McLean

65 papers receiving 4.3k citations

F. B. McLean's Hit Papers

Total ionizing dose effects in MOS oxides and devices 2003 · 698 citations
6980+15+30Years since publication200400600

Peers

F. B. McLean
Comparison fields: 5 of 70
  • Electrical and Electronic Engineering 4.3k
  • Hardware and Architecture 186
  • Nuclear Energy and Engineering 12
  • Materials Chemistry 848
  • Ceramics and Composites 105
Replace P.S. Winokur with:
P.S. Winokur United States
J.M. McGarrity United States
H. E. Boesch United States
K.F. Galloway United States
J.R. Brews United States
Timothy R. Oldham United States
J. R. Srour United States
P. V. Dressendorfer United States
T. P. United States
N. S. Saks United States
F. B. McLean relative to P.S. Winokur United States P.S. Winokur's profile →
Citations per field
00.5×1.5×2.4×
P.S. Winokur · 1×
Citations per year

Countries citing papers authored by F. B. McLean

Since Specialization
Citations

This map shows the geographic impact of F. B. McLean's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. B. McLean with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. B. McLean more than expected).

Fields of papers citing papers by F. B. McLean

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. B. McLean. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. B. McLean. The network helps show where F. B. McLean may publish in the future.

Co-authors

The 25 scholars most cited alongside F. B. McLean, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with F. B. McLean Line = papers co-authored together F. B. McLean links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 66 papers — load more, or switch the sort, to bring in the rest.

#Work
1
Total ionizing dose effects in MOS oxides and devices
Hit paper breakdown →
2003698
2
A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
Hit paper breakdown →
1980520
3 1989268
4 1986226
5 1979177
6 1988173
7 2008148
8 1975147
9 1985144
10 1977136
11 1982136
12 1976122
13 1989122
14 1986120
15 1994110
16 198786
17 199285
18 197581
19 198576
20 199073

About F. B. McLean

F. B. McLean is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Mechanics of Materials and Computational Mechanics, having authored 66 papers that have together received 4.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (49 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers), Silicon Carbide Semiconductor Technologies (16 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers), Semiconductor materials and interfaces (11 papers), Radiation Effects in Electronics (8 papers), Silicon Nanostructures and Photoluminescence (5 papers) and Ion-surface interactions and analysis (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (4.3k citations), Hardware and Architecture (186 citations), Nuclear Energy and Engineering (12 citations), Materials Chemistry (848 citations) and Ceramics and Composites (105 citations). F. B. McLean has collaborated with scholars based in United States and United Kingdom. Frequent co-authors include Timothy R. Oldham, H. E. Boesch, J.M. McGarrity, Aivars J. Lelis, J.M. Benedetto, G. A. Ausman, P.S. Winokur, Daniel B. Habersat, J.P. Mize and Neil Goldsman. Their work appears in journals such as IEEE Transactions on Nuclear Science, Journal of Applied Physics, Applied Physics Letters, IEEE Transactions on Electron Devices and Integrated ferroelectrics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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