D. E. Sykes

659 citations

39 papers · 511 · h-index 13

Impact in

Surfaces, Coatings and Films top 10%
- Electron and X-Ray Spectroscopy Techniques
Computational Mechanics top 5%
- Ion-surface interactions and analysis

Papers in

Electrical and Electronic Engineering 25
- Integrated Circuits and Semiconductor Failure Analysis 14
- Semiconductor materials and devices 11
- Semiconductor Lasers and Optical Devices 4
Computational Mechanics 24
- Ion-surface interactions and analysis 24

Co-authors: John M. Walls (4 shared papers)Robert Bradley (3 shared papers)J. P. Stagg (1 shared paper)A. Briggs (1 shared paper)C. R. Whitehouse (3 shared papers)N. E. B. Cowern (1 shared paper)D. J. Godfrey (1 shared paper)Trevor Martin (2 shared papers)
Journals: Surface and Interface Analysis (13 papers)Applied Surface Science (3 papers)Applied Physics Letters (3 papers)Journal of Crystal Growth (3 papers)Semiconductor Science and Technology (2 papers)
Partner nations: United Kingdom United States Italy

In The Last Decade

D. E. Sykes

36 papers receiving 467 citations

Peers

Countries citing papers authored by D. E. Sykes

Since Specialization

Citations

This map shows the geographic impact of D. E. Sykes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. E. Sykes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. E. Sykes more than expected).

Fields of papers citing papers by D. E. Sykes

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. E. Sykes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. E. Sykes. The network helps show where D. E. Sykes may publish in the future.

Co-authors

The 25 scholars most cited alongside D. E. Sykes, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. E. Sykes Line = papers co-authored together D. E. Sykes links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 39 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy Applied Physics Letters ·G. R. Antell, A. Briggs, B.R. Butler, S.A. Kitching, J. P. Stagg, A. Chew, D. E. Sykes	1988	77
2	Secondary ion mass spectrometry - SIMS VIII Spectrochimica Acta Part A Molecular Spectroscopy ·D. E. Sykes	1993	58
3	Composition–Depth profiling and interface analysis of surface coatings using ball cratering and the scanning auger microprobe Surface and Interface Analysis ·John M. Walls, D. D. Hall, D. E. Sykes	1979	57
4	Improved sputter-depth profiles using two ion guns Applications of Surface Science ·D. E. Sykes, D. D. Hall, R.E. Thurstans, John M. Walls	1980	36
5	Molecular-beam epitaxy of (100) InSb for CdTe/InSb device applications Journal of Applied Physics ·G. M. Williams, C. R. Whitehouse, Trevor Martin, N. G. Chew, A. G. Cullis, T. Ashley, D. E. Sykes, K. J. Mackey, R. H. Williams	1988	35
6	Transient enhanced diffusion of phosphorus in silicon Applied Physics Letters ·N. E. B. Cowern, D. J. Godfrey, D. E. Sykes	1986	24
7	Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy Applied Physics Letters ·Trevor Martin, C.R. Stanley, Agis A. Iliadis, C. R. Whitehouse, D. E. Sykes	1985	22
8	Diffusion-induced disordering of Ga _0.47 In _0.53 As/InP multiple quantum wells with zinc Electronics Letters ·I. Pape, P. Li Kam Wa, J.P.R. David, P.A. Claxton, P.N. Robson, D. E. Sykes	1988	21
9	UV ozone modification of wool fibre surfaces Applied Surface Science ·Robert Bradley, I. L. Clackson, D. E. Sykes	1993	20
10	A comparative study of SIMS depth profiling of boron in silicon Surface and Interface Analysis ·J. B. Clegg, A. E. Morgan, H. A. M. de Grefte, F. Simondet, A. M. Huber, G. W. Blackmore, M. G. Dowsett, D. E. Sykes, C. W. Magee, V. R. Deline	1984	18
11	SIMS depth profiling of rubber-tyre cord bonding layers prepared using 64Zn depleted ZnO Applied Surface Science ·W. Stephen Fulton, D. E. Sykes, Graham C. Smith	2006	16
12	SIMS depth profiling with sample rotation in a cameca IMS 3F Surface and Interface Analysis ·D. E. Sykes, A. Chew	1994	15
13	XPS of oxidized wool fibre surfaces Surface and Interface Analysis ·Robert Bradley, I. L. Clackson, D. E. Sykes	1994	13
14	An investigation of the Cs bombardment induced altered layer in Si by MEIS, RBS, SIMS and IMPETUS simulation Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Řeža Valizadeh, Jaap van den Berg, R. Badheka, A. Al Bayati, D.G. Armour, D. E. Sykes	1992	12
15	Oxygen incorporation in aluminium-based semiconductors grown by metalorganic vapour phase epitaxy Journal of Crystal Growth ·Lesley M. Smith, S. Rushworth, Anthony C. Jones, J.S. Roberts, A. Chew, D. E. Sykes	1993	11
16	Summary Abstract: Surface topography of electronic materials following oxygen and cesium ion bombardment Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Sara J. Duncan, R. Jeffrey Smith, D. E. Sykes, John M. Walls	1983	10
17	A SIMS calibration exercise using multi‐element (Cr, Fe and Zn) implanted GaAs Surface and Interface Analysis ·J. B. Clegg, I. G. Gale, G. W. Blackmore, M. G. Dowsett, D. S. McPhail, G. D. T. Spiller, D. E. Sykes	1987	8
18	SIMS depth resolution studies in Al _x Ga _{1− x} As using specially grown MBE samples Surface and Interface Analysis ·M. R. Houlton, G. W. Blackmore, M. T. Emeny, C. R. Whitehouse, A. Chew, D. E. Sykes	1993	7
19	Investigations on the influence of masks on the nature of selective area epitaxy Journal of Crystal Growth ·Paul M. Thompson, A.K. Wood, Nicholas Carr, P.M. Charles, A.J. Moseley, R. Pritchard, B. Hamilton, A. Chew, D. E. Sykes, Tae‐Yeon Seong	1992	7
20	SIMS with sample rotation: an experimental novelty or a practical necessity? Surface and Interface Analysis ·D. E. Sykes	1999	6

About D. E. Sykes

D. E. Sykes is a scholar working on Electrical and Electronic Engineering, Computational Mechanics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films and Materials Chemistry, having authored 39 papers that have together received 511 indexed citations. Recurring topics across this work include Ion-surface interactions and analysis (24 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers), Semiconductor materials and devices (11 papers), Electron and X-Ray Spectroscopy Techniques (9 papers), Semiconductor Quantum Structures and Devices (8 papers), X-ray Spectroscopy and Fluorescence Analysis (4 papers), Force Microscopy Techniques and Applications (4 papers) and Semiconductor Lasers and Optical Devices (4 papers). The work is most often cited by research in Surfaces, Coatings and Films (84 citations), Computational Mechanics (218 citations), Atomic and Molecular Physics, and Optics (187 citations), Electrical and Electronic Engineering (326 citations) and Analytical Chemistry (26 citations). D. E. Sykes has collaborated with scholars based in United Kingdom, United States and Italy. Frequent co-authors include John M. Walls, Robert Bradley, J. P. Stagg, A. Briggs, C. R. Whitehouse, N. E. B. Cowern, D. J. Godfrey, Trevor Martin, Graham C. Smith and J. B. Clegg. Their work appears in journals such as Surface and Interface Analysis, Applied Surface Science, Applied Physics Letters, Journal of Crystal Growth and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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