Zehao Lin

1.8k citations

66 papers · 1.4k · 1 hit paper · h-index 22

Impact in

Electrical and Electronic Engineering top 5%
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
Materials Chemistry top 10%
- ZnO doping and properties
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 56
- Semiconductor materials and devices 37
- Thin-Film Transistor Technologies 35
- Advanced Memory and Neural Computing 13
- Advancements in Semiconductor Devices and Circuit Design 9
- Ferroelectric and Negative Capacitance Devices 6
Materials Chemistry 40
- ZnO doping and properties 19
- Electronic and Structural Properties of Oxides 10

Co-authors: Peide D. Ye (42 shared papers)Mengwei Si (28 shared papers)Adam Charnas (17 shared papers)Haiyan Wang (19 shared papers)Zhuocheng Zhang (19 shared papers)Xing Sun (2 shared papers)Zhizhong Chen (3 shared papers)Dongqi Zheng (10 shared papers)
Journals: IEEE Transactions on Electron Devices (12 papers)IEEE Electron Device Letters (6 papers)Europhysics Letters (EPL) (5 papers)Applied Physics Letters (4 papers)Nano Letters (3 papers)
Partner nations: United States China South Korea

In The Last Decade

Zehao Lin

61 papers receiving 1.3k citations

Zehao Lin's Hit Papers

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Scaled indium oxide transistors fabricated using atomic layer deposition 2022 · 222 citations

Peers

Countries citing papers authored by Zehao Lin

Since Specialization

Citations

This map shows the geographic impact of Zehao Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zehao Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zehao Lin more than expected).

Fields of papers citing papers by Zehao Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zehao Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zehao Lin. The network helps show where Zehao Lin may publish in the future.

Co-authors

The 25 scholars most cited alongside Zehao Lin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Zehao Lin Line = papers co-authored together Zehao Lin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 66 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Scaled indium oxide transistors fabricated using atomic layer deposition Nature Electronics ·Mengwei Si, Zehao Lin, Zhizhong Chen, Xing Sun, Haiyan Wang, Peide D. Ye Hit paper breakdown →	2022	222
2	Why In₂O₃ Can Make 0.7 nm Atomic Layer Thin Transistors Nano Letters ·Mengwei Si, Yaoqiao Hu, Zehao Lin, Xing Sun, Adam Charnas, Dongqi Zheng, Xiao Lyu, Haiyan Wang, Kyeongjae Cho, Peide D. Ye	2020	175
3	Enhancement-Mode Atomic-Layer-Deposited In₂O₃ Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen Environment IEEE Transactions on Electron Devices ·Mengwei Si, Adam Charnas, Zehao Lin, Peide D. Ye	2021	64
4	Review—Extremely Thin Amorphous Indium Oxide Transistors Advanced Materials ·Adam Charnas, Zhuocheng Zhang, Zehao Lin, Dongqi Zheng, Jie Zhang, Mengwei Si, Peide D. Ye	2023	60
5	Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition IEEE Electron Device Letters ·Jie Zhang, Dongqi Zheng, Zhuocheng Zhang, Adam Charnas, Zehao Lin, Peide D. Ye	2022	53
6	High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration IEEE Transactions on Electron Devices ·Mengwei Si, Zehao Lin, Zhizhong Chen, Peide D. Ye	2021	46
7	Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition IEEE Transactions on Electron Devices ·Jie Zhang, Zehao Lin, Zhuocheng Zhang, Ke Xu, Hongyi Dou, Bo Yang, Adam Charnas, Dongqi Zheng, X. Zhang, Haiyan Wang, Peide D. Ye	2023	37
8	Enhancement-mode atomic-layer thin In2O3 transistors with maximum current exceeding 2 A/mm at drain voltage of 0.7 V enabled by oxygen plasma treatment Applied Physics Letters ·Adam Charnas, Mengwei Si, Zehao Lin, Peide D. Ye	2021	36
9	Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition IEEE Transactions on Electron Devices ·Zhuocheng Zhang, Yaoqiao Hu, Zehao Lin, Mengwei Si, Adam Charnas, Kyeongjae Cho, Peide D. Ye	2021	34
10	First Demonstration of BEOL-Compatible Ultrathin AtomicLayer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability 2022 International Electron Devices Meeting (IEDM) ·Dongqi Zheng, Adam Charnas, Jackson Anderson, Hongyi Dou, Zheng Hu, Zehao Lin, Z. Zhang, Jianyue Zhang, Pai-Ying Liao, Mengwei Si, Haiyan Wang, Dana Weinstein, P. D. Ye	2022	33
11	A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current IEEE Electron Device Letters ·Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao, Vahid Askarpour, Hongyi Dou, Zhongxia Shang, Adam Charnas, Mengwei Si, Sami Alajlouni, Ali Shakouri, Haiyan Wang, Mark Lundstrom, Jesse Maassen, Peide D. Ye	2022	31
12	BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 10¹⁴/cm² at Oxide/Oxide Interface by the Change of Ferroelectric Polarization IEEE Transactions on Electron Devices ·Mengwei Si, Anna Murray, Zehao Lin, Joseph Andler, Junkang Li, Jinhyun Noh, Sami Alajlouni, Chang Niu, Xiao Lyu, Dongqi Zheng, Kerry Maize, Ali Shakouri, Suman Datta, Rakesh Agrawal, Peide D. Ye	2021	28
13	Atomically thin In2O3 field-effect transistors with 1017 current on/off ratio Applied Physics Letters ·Adam Charnas, Zehao Lin, Zhuocheng Zhang, Peide D. Ye	2021	28
14	High-Peformance BEOL-Compatible Atomic-Layer-Deposited In₂O₃ Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 10⁸ Cycles 2021 IEEE International Electron Devices Meeting (IEDM) ·Zehao Lin, Mengwei Si, Yuan-Chun Luo, Xiao Lyu, Adam Charnas, Zhixiang Chen, Zhouchangwan Yu, Wilman Tsai, Paul C. McIntyre, R. Kanjolia, M. Moinpour, Shimeng Yu, P. D. Ye	2021	28
15	Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma Applied Physics Letters ·Jie Zhang, Adam Charnas, Zehao Lin, Dongqi Zheng, Zhuocheng Zhang, Pai-Ying Liao, Dmitry Zemlyanov, Peide D. Ye	2022	27
16	Signature of quantum Griffiths singularity state in a layered quasi-one-dimensional superconductor Nature Communications ·Enze Zhang, Jinhua Zhi, Yichao Zou, Zefang Ye, Linfeng Ai, Jiacheng Shi, Ce Huang, Shanshan Liu, Zehao Lin, Xinyuan Zheng, Ning Kang, H. Q. Xu, Wei Wang, Liang He, Jin Zou, Jinyu Liu, Zhiqiang Mao, Faxian Xiu	2018	27
17	Ultrahigh Bias Stability of ALD In₂O₃ FETs Enabled by High Temperature O₂ Annealing Zhuocheng Zhang, Zehao Lin, Chang Niu, Mengwei Si, Muhammad A. Alam, Peide D. Ye	2023	23
18	Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-Thick, In₂O₃ Thin-Film Transistors IEEE Electron Device Letters ·Yen-Pu Chen, Mengwei Si, Bikram Kishore Mahajan, Zehao Lin, Peide D. Ye, Muhammad A. Alam	2021	23
19	Predicting the stability of nanodevices Europhysics Letters (EPL) ·Zehao Lin, Weifeng Yu, Yin Wang, Xi‐Jing Ning	2011	23
20	First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10¹¹, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability Jie Zhang, Zhuocheng Zhang, Zehao Lin, Ke Xu, Hongyi Dou, Bo Yang, X. Zhang, Haiyan Wang, Peide D. Ye	2023	22

About Zehao Lin

Zehao Lin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 66 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (37 papers), Thin-Film Transistor Technologies (35 papers), ZnO doping and properties (19 papers), Advanced Memory and Neural Computing (13 papers), Electronic and Structural Properties of Oxides (10 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers), Transition Metal Oxide Nanomaterials (7 papers) and Ferroelectric and Negative Capacitance Devices (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Materials Chemistry (651 citations), Polymers and Plastics (89 citations), Electronic, Optical and Magnetic Materials (107 citations) and Biomedical Engineering (190 citations). Zehao Lin has collaborated with scholars based in United States, China and South Korea. Frequent co-authors include Peide D. Ye, Mengwei Si, Adam Charnas, Haiyan Wang, Zhuocheng Zhang, Xing Sun, Zhizhong Chen, Dongqi Zheng, Jie Zhang and Yaoqiao Hu. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Europhysics Letters (EPL), Applied Physics Letters and Nano Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Zehao Lin's Hit Papers

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About Zehao Lin

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