V. Gaddam

1.0k citations
41 papers · 779 · h-index 16

Impact in

    • Ferroelectric and Negative Capacitance Devices
    • Semiconductor materials and devices
    • Advanced Memory and Neural Computing
    • Gas Sensing Nanomaterials and Sensors
    • MXene and MAX Phase Materials
    • Ferroelectric and Piezoelectric Materials
    • ZnO doping and properties

Papers in

    • Ferroelectric and Negative Capacitance Devices 18
    • Semiconductor materials and devices 15
    • Gas Sensing Nanomaterials and Sensors 11
    • Nanomaterials and Printing Technologies 3
    • MXene and MAX Phase Materials 14
    • ZnO doping and properties 7

V. Gaddam

39 papers receiving 766 citations

Peers

V. Gaddam
Comparison fields: 5 of 45
  • Electrical and Electronic Engineering 676
  • Materials Chemistry 504
  • Bioengineering 25
  • Biomedical Engineering 175
  • Polymers and Plastics 52
Replace Seung-Yeol Han with:
Seung-Yeol Han United States
Woo‐Seok Cheong South Korea
Jaakko Leppäniemi Finland
Wenlong Jiang China
Iddo Amit Israel
Jiazhen Sheng South Korea
Jiun‐Yi Tseng Taiwan
Indu Sharma India
Zhaohao Zhang China
Oliver Hartwig Germany
V. Gaddam relative to Seung-Yeol Han United States Seung-Yeol Han's profile →
Citations per field
00.5×6.3×
Seung-Yeol Han · 1×
Citations per year

Countries citing papers authored by V. Gaddam

Since Specialization
Citations

This map shows the geographic impact of V. Gaddam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Gaddam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Gaddam more than expected).

Fields of papers citing papers by V. Gaddam

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Gaddam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Gaddam. The network helps show where V. Gaddam may publish in the future.

Co-authors

The 25 scholars most cited alongside V. Gaddam, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. Gaddam Line = papers co-authored together V. Gaddam links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 41 papers — load more, or switch the sort, to bring in the rest.

#Work
1 2020110
2 202159
3 202254
4 201754
5 201550
6 201949
7 202140
8 202136
9 202134
10 202232
11 201527
12 200724
13 202122
14 202317
15 202017
16 202216
17 201415
18 201514
19 202111
20 20189

About V. Gaddam

V. Gaddam is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, Bioengineering and Electronic, Optical and Magnetic Materials, having authored 41 papers that have together received 779 indexed citations. Recurring topics across this work include Ferroelectric and Negative Capacitance Devices (18 papers), Semiconductor materials and devices (15 papers), MXene and MAX Phase Materials (14 papers), Advanced Sensor and Energy Harvesting Materials (12 papers), Gas Sensing Nanomaterials and Sensors (11 papers), ZnO doping and properties (7 papers), Nanomaterials and Printing Technologies (3 papers) and Analytical Chemistry and Sensors (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (676 citations), Materials Chemistry (504 citations), Bioengineering (25 citations), Biomedical Engineering (175 citations) and Polymers and Plastics (52 citations). V. Gaddam has collaborated with scholars based in South Korea, India and United States. Frequent co-authors include Sanghun Jeon, Dipjyoti Das, K. Rajanna, Minhyun Jung, M. M. Nayak, R. Rakesh Kumar, Mitesh Parmar, Sanghun Jeon, Taeho Kim and D. L. Rode. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, RSC Advances, Journal of Applied Physics and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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