T.Y. Chan

2.3k citations

37 papers · 1.8k · 1 hit paper · h-index 16

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Low-power high-performance VLSI design
- Electrostatic Discharge in Electronics
Atomic and Molecular Physics, and Optics

Papers in

Electrical and Electronic Engineering 37
- Semiconductor materials and devices 36
- Advancements in Semiconductor Devices and Circuit Design 35
- Integrated Circuits and Semiconductor Failure Analysis 15
- Silicon Carbide Semiconductor Technologies 8
- Silicon and Solar Cell Technologies 2
- Electrostatic Discharge in Electronics 2
- Ferroelectric and Negative Capacitance Devices 2
Atomic and Molecular Physics, and Optics 3
- Semiconductor materials and interfaces 2

Co-authors: Chenming Calvin Hu (20 shared papers)Ping Keung Ko (10 shared papers)P.K. Ko (11 shared papers)Jianwen Chen (4 shared papers)Hu ChengYuan (5 shared papers)M.-C. Jeng (3 shared papers)A.T. Wu (12 shared papers)Yuhua Cheng (1 shared paper)
Journals: IEEE Electron Device Letters (14 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Letters (1 paper)Solid-State Electronics (1 paper)Symposium on VLSI Technology (2 papers)
Partner nations: United States Italy Hong Kong

In The Last Decade

T.Y. Chan

36 papers receiving 1.6k citations

T.Y. Chan's Hit Papers

align trajectories log scale

Threshold voltage model for deep-submicrometer MOSFETs 1993 · 370 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

1993 IEEE Transactions on Electron Devices

Peers

Countries citing papers authored by T.Y. Chan

Since Specialization

Citations

This map shows the geographic impact of T.Y. Chan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.Y. Chan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.Y. Chan more than expected).

Fields of papers citing papers by T.Y. Chan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.Y. Chan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.Y. Chan. The network helps show where T.Y. Chan may publish in the future.

Co-authors

The 25 scholars most cited alongside T.Y. Chan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T.Y. Chan Line = papers co-authored together T.Y. Chan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 37 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Threshold voltage model for deep-submicrometer MOSFETs IEEE Transactions on Electron Devices ·zhenglin liu, Chenming Calvin Hu, Jiawei Huang, T.Y. Chan, M.-C. Jeng, Ping Keung Ko, Yuhua Cheng Hit paper breakdown →	1993	370
2	The impact of gate-induced drain leakage current on MOSFET scaling Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·T.Y. Chan, Jianwen Chen, Ping Keung Ko, Hu ChengYuan	1987	279
3	Subbreakdown drain leakage current in MOSFET IEEE Electron Device Letters ·Jianwen Chen, T.Y. Chan, I.C. Chen, Ping Keung Ko, Chenming Calvin Hu	1987	246
4	A simple method to characterize substrate current in MOSFET's IEEE Electron Device Letters ·T.Y. Chan, P.K. Ko, Chenming Calvin Hu	1984	151
5	Dependence of channel electric field on device scaling IEEE Electron Device Letters ·T.Y. Chan, P.K. Ko, Chenming Calvin Hu	1985	113
6	Deep-submicrometer MOS device fabrication using a photoresist-ashing technique IEEE Electron Device Letters ·J.E. Chung, M.-C. Jeng, J.E. Moon, A.T. Wu, T.Y. Chan, P.K. Ko, Hu ChengYuan	1988	82
7	A true single-transistor oxide-nitride-oxide EEPROM device IEEE Electron Device Letters ·T.Y. Chan, Konrad K.-L. Young, Chenming Calvin Hu	1987	73
8	A CV technique for measuring thin SOI film thickness IEEE Electron Device Letters ·J. Chen, R. Solomon, T.Y. Chan, Ping Keung Ko, Chenming Calvin Hu	1991	61
9	Asymmetrical characteristics in LDD and minimum-overlap MOSFET's IEEE Electron Device Letters ·T.Y. Chan, A.T. Wu, Ping Keung Ko, Chenming Calvin Hu, Reda R. Razouk	1986	51
10	Threshold voltage and C-V characteristics of SOI MOSFET's related to Si film thickness variation on SIMOX wafers IEEE Transactions on Electron Devices ·J. Chen, R. Solomon, T.Y. Chan, P.K. Ko, Chenming Calvin Hu	1992	42
11	A novel high-speed, 5-volt programming EPROM structure with source-side injection Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·A.T. Wu, T.Y. Chan, P.K. Ko, Chenming Calvin Hu	1986	41
12	The effects of weak gate-to-drain(source) overlap on MOSFET characteristics Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Ping Keung Ko, T.Y. Chan, A.T. Wu, Chenming Calvin Hu	1986	27
13	Effects of the gate-to-drain/source overlap on MOSFET characteristics IEEE Electron Device Letters ·T.Y. Chan, A.T. Wu, Ping Keung Ko, Chenming Calvin Hu	1987	25
14	MOSFET drain breakdown voltage IEEE Electron Device Letters ·Wu‐Shiung Feng, T.Y. Chan, Chenming Hu	1986	24
15	Gate current in OFF-state MOSFET IEEE Electron Device Letters ·Jianwen Chen, T.Y. Chan, Ping Keung Ko, Chenming Calvin Hu	1989	23
16	Experimental characterization and modeling of electron saturation velocity in MOSFETs inversion layer from 90 to 350 K IEEE Electron Device Letters ·T.Y. Chan, S.-W. Lee, Henry T. Gaw	1990	21
17	Temperature and field dependence of carrier mobility in MOSFETs with reoxidized nitrided oxide gate dielectrics Solid-State Electronics ·A.T. Wu, S.W. Lee, T.Y. Chan, V. Murali	1992	16
18	A source-side injection erasable programmable read-only-memory (SI-EPROM) device IEEE Electron Device Letters ·A.T. Wu, T.Y. Chan, P.K. Ko, Chenming Calvin Hu	1986	15
19	A capacitance method to determine the gate-to-drain/Source overlap length of MOSFET's IEEE Electron Device Letters ·T.Y. Chan, A.T. Wu, Ping Keung Ko, Chenming Calvin Hu	1987	14
20	Circuit performance of CMOS technologies with silicon dioxide and reoxidized nitrided oxide gate dielectrics IEEE Electron Device Letters ·S.-W. Lee, T.Y. Chan, A.T. Wu	1990	13

About T.Y. Chan

T.Y. Chan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry and Computational Mechanics, having authored 37 papers that have together received 1.8k indexed citations. Recurring topics across this work include Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers), Integrated Circuits and Semiconductor Failure Analysis (15 papers), Silicon Carbide Semiconductor Technologies (8 papers), Silicon and Solar Cell Technologies (2 papers), Electrostatic Discharge in Electronics (2 papers), Semiconductor materials and interfaces (2 papers) and Ferroelectric and Negative Capacitance Devices (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.7k citations), Atomic and Molecular Physics, and Optics (108 citations), Hardware and Architecture (22 citations), Biomedical Engineering (113 citations) and Instrumentation (8 citations). T.Y. Chan has collaborated with scholars based in United States, Italy and Hong Kong. Frequent co-authors include Chenming Calvin Hu, Ping Keung Ko, P.K. Ko, Jianwen Chen, Hu ChengYuan, M.-C. Jeng, A.T. Wu, Yuhua Cheng, Jiawei Huang and I.C. Chen. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, Solid-State Electronics and Symposium on VLSI Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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T.Y. Chan

T.Y. Chan's Hit Papers

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