Th. Gessmann

32 papers receiving 1.5k citations

Th. Gessmann's Hit Papers

Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes 2003 · 407 citations
4070+7+15Years since publication100200300400

Peers

Th. Gessmann
Comparison fields: 5 of 68
  • Condensed Matter Physics 847
  • Atomic and Molecular Physics, and Optics 560
  • Electronic, Optical and Magnetic Materials 273
  • Electrical and Electronic Engineering 858
  • Materials Chemistry 599
Replace Nobuyuki Ikarashi with:
Nobuyuki Ikarashi Japan
Eirini Sarigiannidou France
R. M. Fletcher United States
H. Vinzelberg Germany
Chao Zhao China
V. Lebedev Germany
P. Ferret France
Yinchu Shen United States
Th. Gessmann relative to Nobuyuki Ikarashi Japan Nobuyuki Ikarashi's profile →
Citations per field
00.5×1.5×2.4×
Nobuyuki Ikarashi · 1×
Citations per year

Countries citing papers authored by Th. Gessmann

Since Specialization
Citations

This map shows the geographic impact of Th. Gessmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Th. Gessmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Th. Gessmann more than expected).

Fields of papers citing papers by Th. Gessmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Th. Gessmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Th. Gessmann. The network helps show where Th. Gessmann may publish in the future.

Co-authors

The 25 scholars most cited alongside Th. Gessmann, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Th. Gessmann Line = papers co-authored together Th. Gessmann links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 32 papers — load more, or switch the sort, to bring in the rest.

#Work
1
Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes
Hit paper breakdown →
2003407
2 2005257
3 2005172
4 2004151
5 200075
6 200563
7 200255
8 200354
9 199551
10 200348
11 200435
12 200234
13 199526
14 200322
15 199514
16 199514
17 200610
18 20059
19 20018
20 20048

About Th. Gessmann

Th. Gessmann is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 32 papers that have together received 1.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (16 papers), Muon and positron interactions and applications (7 papers), Semiconductor materials and devices (7 papers), Ga2O3 and related materials (7 papers), Microstructure and mechanical properties (4 papers), Semiconductor Quantum Structures and Devices (4 papers), Photonic Crystals and Applications (4 papers) and Optical Coatings and Gratings (3 papers). The work is most often cited by research in Condensed Matter Physics (847 citations), Atomic and Molecular Physics, and Optics (560 citations), Electronic, Optical and Magnetic Materials (273 citations), Electrical and Electronic Engineering (858 citations) and Materials Chemistry (599 citations). Th. Gessmann has collaborated with scholars based in United States, Germany and Taiwan. Frequent co-authors include E. Fred Schubert, Jay Shah, Y. Xi, E. Fred Schubert, Sameer Chhajed, J.W. Graff, Jingtian Xi, Jinn‐Kong Sheu, H.‐E. Schaefer and Mary H. Crawford. Their work appears in journals such as Journal of Applied Physics, Nanostructured Materials, Applied Physics Letters, Journal of The Electrochemical Society and Optics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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