T. Rödle

563 citations
30 papers · 448 · h-index 13

Impact in

Papers in

    • Silicon Carbide Semiconductor Technologies 22
    • Semiconductor materials and devices 16
    • Radio Frequency Integrated Circuit Design 6
    • Advanced Power Amplifier Design 3
    • Electromagnetic Compatibility and Noise Suppression 3
    • GaN-based semiconductor devices and materials 19

T. Rödle

29 papers receiving 429 citations

Peers

T. Rödle
Comparison fields: 5 of 19
  • Condensed Matter Physics 237
  • Ceramics and Composites 46
  • Electrical and Electronic Engineering 369
  • Electronic, Optical and Magnetic Materials 89
  • Atomic and Molecular Physics, and Optics 83
Replace M. K. Linnarsson with:
M. K. Linnarsson Sweden
M. F. da Silva Portugal
Anatoly M. Strel’chuk Russia
Ethan Stark United States
J. W. Lee United States
M. Roth United States
N.S. Savkina Russia
Takeshi Kusumori Japan
S. C. Sanders United States
S. Leibenzeder Germany
T. Rödle relative to M. K. Linnarsson Sweden M. K. Linnarsson's profile →
Citations per field
00.5×4.7×
M. K. Linnarsson · 1×
Citations per year

Countries citing papers authored by T. Rödle

Since Specialization
Citations

This map shows the geographic impact of T. Rödle's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Rödle with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Rödle more than expected).

Fields of papers citing papers by T. Rödle

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Rödle. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Rödle. The network helps show where T. Rödle may publish in the future.

Co-authors

The 25 scholars most cited alongside T. Rödle, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Rödle Line = papers co-authored together T. Rödle links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 30 papers — load more, or switch the sort, to bring in the rest.

#Work
1 200660
2 200543
3 199534
4 199727
5 200926
6 200426
7 200625
8 199625
9 200924
10 200720
11 200718
12 201018
13 200716
14 201012
15 200511
16 200710
17 20108
18 20088
19
Reliability of AlGaN/GaN HEMTs under DC- and RF-operation
20096
20 20105

About T. Rödle

T. Rödle is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Ceramics and Composites and Atomic and Molecular Physics, and Optics, having authored 30 papers that have together received 448 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (22 papers), GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (16 papers), Radio Frequency Integrated Circuit Design (6 papers), Ga2O3 and related materials (5 papers), Advanced ceramic materials synthesis (3 papers), Advanced Power Amplifier Design (3 papers) and Electromagnetic Compatibility and Noise Suppression (3 papers). The work is most often cited by research in Condensed Matter Physics (237 citations), Ceramics and Composites (46 citations), Electrical and Electronic Engineering (369 citations), Electronic, Optical and Magnetic Materials (89 citations) and Atomic and Molecular Physics, and Optics (83 citations). T. Rödle has collaborated with scholars based in Netherlands, Germany and Sweden. Frequent co-authors include W. Bolse, Herbert Zirath, E.Ö. Sveinbjörnsson, Thomas Weber, P.R. Hageman, Fredrik Allerstam, P.K. Larsen, H.F.F. Jos, Rik Jos and Vincent Desmaris. Their work appears in journals such as IEEE Electron Device Letters, Microelectronics Reliability, physica status solidi (a), IEEE Transactions on Electron Devices and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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