T. J. Echtermeyer

3.8k citations

30 papers · 2.9k · 2 hit papers · h-index 18

Impact in

Materials Chemistry top 2%
- Graphene research and applications
- 2D Materials and Applications
- Carbon Nanotubes in Composites
Atomic and Molecular Physics, and Optics top 5%
- Quantum and electron transport phenomena

Papers in

Electrical and Electronic Engineering 19
- Advancements in Semiconductor Devices and Circuit Design 13
- Semiconductor materials and devices 12
- Ferroelectric and Negative Capacitance Devices 3
- Integrated Circuits and Semiconductor Failure Analysis 3
Materials Chemistry 17
- Graphene research and applications 15

Co-authors: Max C. Lemme (18 shared papers)H. Kurz (17 shared papers)M. Baus (7 shared papers)A. K. Geǐm (2 shared papers)Kostya S. Novoselov (2 shared papers)Roman Gorbachev (2 shared papers)Andrea C. Ferrari (2 shared papers)A. N. Grigorenko (1 shared paper)
Journals: Nano Letters (4 papers)IEEE Electron Device Letters (3 papers)Solid-State Electronics (3 papers)Nanoscale (2 papers)Nature Communications (1 paper)
Partner nations: Germany United Kingdom China

In The Last Decade

T. J. Echtermeyer

29 papers receiving 2.8k citations

T. J. Echtermeyer's Hit Papers

align trajectories log scale

Strong plasmonic enhancement of photovoltage in graphene 2011 · 742 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2011 Nature Communications
2007 IEEE Electron Device Letters

Peers

Countries citing papers authored by T. J. Echtermeyer

Since Specialization

Citations

This map shows the geographic impact of T. J. Echtermeyer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. J. Echtermeyer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. J. Echtermeyer more than expected).

Fields of papers citing papers by T. J. Echtermeyer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. J. Echtermeyer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. J. Echtermeyer. The network helps show where T. J. Echtermeyer may publish in the future.

Co-authors

The 25 scholars most cited alongside T. J. Echtermeyer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. J. Echtermeyer Line = papers co-authored together T. J. Echtermeyer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 30 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	A Graphene Field-Effect Device IEEE Electron Device Letters ·Max C. Lemme, T. J. Echtermeyer, M. Baus, H. Kurz Hit paper breakdown →	2007	800
2	Strong plasmonic enhancement of photovoltage in graphene Nature Communications ·T. J. Echtermeyer, L. Britnell, P.K. Jasnos, Antonio Lombardo, Roman Gorbachev, A. N. Grigorenko, A. K. Geǐm, Andrea C. Ferrari, Kostya S. Novoselov Hit paper breakdown →	2011	742
3	Intrinsic and extrinsic corrugation of monolayer graphene deposited onSiO2 Physical Review Letters ·V. Geringer, Marcus Liebmann, T. J. Echtermeyer, Sven Runte, Manuel Schmidt, Reinhard Rückamp, Max C. Lemme, Markus Morgenstern	2009	266
4	Surface Plasmon Polariton Graphene Photodetectors Nano Letters ·T. J. Echtermeyer, Silvia Milana, Ugo Sassi, Anna Eiden, M Wu, Elefterios Lidorikis, A. C. Ferrari	2015	160
5	Photothermoelectric and Photoelectric Contributions to Light Detection in Metal–Graphene–Metal Photodetectors Nano Letters ·T. J. Echtermeyer, Parinita Nene, Maxim Trushin, Roman Gorbachev, Anna Eiden, Silvia Milana, Zhongyuan Sun, John Schliemann, Elefterios Lidorikis, Kostya S. Novoselov, AC Ferrari	2014	144
6	Nonvolatile Switching in Graphene Field-Effect Devices IEEE Electron Device Letters ·T. J. Echtermeyer, Max C. Lemme, M. Baus, B. N. Szafranek, A. K. Geǐm, H. Kurz	2008	134
7	Synthesis of Graphene on Silicon Dioxide by a Solid Carbon Source Nano Letters ·Jens Hofrichter, Bartholomäus N. Szafranek, Martin Otto, T. J. Echtermeyer, M. Baus, Anne Majerus, V. Geringer, M. Ramsteiner, H. Kurz	2009	129
8	Mobility in graphene double gate field effect transistors Solid-State Electronics ·Max C. Lemme, T. J. Echtermeyer, M. Baus, B. N. Szafranek, Jens Bolten, Manuel Schmidt, T. Wahlbrink, H. Kurz	2008	89
9	Bistability and Oscillatory Motion of Natural Nanomembranes Appearing within Monolayer Graphene on Silicon Dioxide Nano Letters ·T. Mashoff, Marco Pratzer, V. Geringer, T. J. Echtermeyer, Max C. Lemme, Marcus Liebmann, Markus Morgenstern	2010	80
10	Towards substrate engineering of graphene–silicon Schottky diode photodetectors Nanoscale ·Hakan Selvi, Nawapong Unsuree, E. J. W. Whittaker, Matthew P. Halsall, E.W. Hill, Andrew G. Thomas, Patrick Parkinson, T. J. Echtermeyer	2018	45
11	Graphene field-effect devices The European Physical Journal Special Topics ·T. J. Echtermeyer, Max C. Lemme, Jens Bolten, M. Baus, M. Ramsteiner, H. Kurz	2007	41
12	Nonperturbative harmonic generation in graphene from intense midinfrared pulsed light Physical review. B. ·Marco Taucer, T. J. Hammond, P. B. Corkum, Giulio Vampa, Charles‐André Couture, Nicolas Thiré, Bruno E. Schmidt, François Légaré, Hakan Selvi, Nawapong Unsuree, B. Hamilton, T. J. Echtermeyer, Melissa A. Denecke	2017	41
13	Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors Nanoscale ·Hakan Selvi, E.W. Hill, Patrick Parkinson, T. J. Echtermeyer	2018	40
14	Electron-beam-induced direct etching of graphene Carbon ·Cornelius Thiele, Alexandre Felten, T. J. Echtermeyer, Andrea C. Ferrari, Cinzia Casiraghi, H. v. Löhneysen, Ralph Krupke	2013	36
15	0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes IEEE Electron Device Letters ·H.D.B. Gottlob, T. J. Echtermeyer, M. Schmidt, T. Mollenhauer, J.K. Efavi, T. Wahlbrink, Max C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H. J. Osten, H. Kurz	2006	36
16	CMOS integration of epitaxial Gd2O3 high-k gate dielectrics Solid-State Electronics ·H.D.B. Gottlob, T. J. Echtermeyer, T. Mollenhauer, J.K. Efavi, M. Schmidt, T. Wahlbrink, Max C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H. J. Osten, A. Fissel	2006	33
17	A Graphene‐Mica‐Based Photo‐Thermal Actuator for Small‐Scale Soft Robots Small ·Ming Gu, T. J. Echtermeyer	2024	24
18	Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering 2D Materials ·Nawapong Unsuree, Hakan Selvi, Michael Crabb, Juan Arturo Alanis, Patrick Parkinson, T. J. Echtermeyer	2019	17
19	Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes Solid-State Electronics ·T. J. Echtermeyer, H.D.B. Gottlob, T. Wahlbrink, T. Mollenhauer, M. Schmidt, J.K. Efavi, Max C. Lemme, H. Kurz	2007	16
20	Complementary metal oxide semiconductor integration of epitaxial Gd2O3 Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Max C. Lemme, H.D.B. Gottlob, T. J. Echtermeyer, M. Schmidt, H. Kurz, Ralf Endres, Udo Schwalke, M. Czernohorkky, Dominic Tetzlaff, H. J. Osten	2009	12

About T. J. Echtermeyer

T. J. Echtermeyer is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering, having authored 30 papers that have together received 2.9k indexed citations. Recurring topics across this work include Graphene research and applications (15 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Semiconductor materials and devices (12 papers), Nanowire Synthesis and Applications (5 papers), Semiconductor materials and interfaces (4 papers), Plasmonic and Surface Plasmon Research (4 papers), Ferroelectric and Negative Capacitance Devices (3 papers) and Integrated Circuits and Semiconductor Failure Analysis (3 papers). The work is most often cited by research in Materials Chemistry (2.2k citations), Atomic and Molecular Physics, and Optics (858 citations), Biomedical Engineering (1.2k citations), Electronic, Optical and Magnetic Materials (494 citations) and Electrical and Electronic Engineering (1.4k citations). T. J. Echtermeyer has collaborated with scholars based in Germany, United Kingdom and China. Frequent co-authors include Max C. Lemme, H. Kurz, M. Baus, A. K. Geǐm, Kostya S. Novoselov, Roman Gorbachev, Andrea C. Ferrari, A. N. Grigorenko, Antonio Lombardo and L. Britnell. Their work appears in journals such as Nano Letters, IEEE Electron Device Letters, Solid-State Electronics, Nanoscale and Nature Communications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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T. J. Echtermeyer

T. J. Echtermeyer's Hit Papers

Peers

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Fields of papers citing papers by T. J. Echtermeyer

All Works

About T. J. Echtermeyer

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