T. E. Whall

2.4k citations

166 papers · 2.0k · h-index 24

Impact in

Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Quantum and electron transport phenomena
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis

Papers in

Electrical and Electronic Engineering 130
- Semiconductor materials and devices 89
- Advancements in Semiconductor Devices and Circuit Design 86
- Integrated Circuits and Semiconductor Failure Analysis 29
- Silicon and Solar Cell Technologies 23
Atomic and Molecular Physics, and Optics 97
- Semiconductor Quantum Structures and Devices 64
- Semiconductor materials and interfaces 37
- Quantum and electron transport phenomena 27

Co-authors: E. H. C. Parker (99 shared papers)R. A. A. Kubiak (35 shared papers)P. J. Phillips (23 shared papers)O. A. Mironov (30 shared papers)M. Myronov (24 shared papers)E. H. C. Parker (19 shared papers)S. M. Newstead (21 shared papers)D. R. Leadley (23 shared papers)
Journals: Applied Physics Letters (21 papers)Semiconductor Science and Technology (17 papers)Journal of Applied Physics (14 papers)Thin Solid Films (11 papers)Journal of Crystal Growth (7 papers)
Partner nations: United Kingdom Germany Ukraine

In The Last Decade

T. E. Whall

162 papers receiving 1.9k citations

Peers

Countries citing papers authored by T. E. Whall

Since Specialization

Citations

This map shows the geographic impact of T. E. Whall's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. E. Whall with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. E. Whall more than expected).

Fields of papers citing papers by T. E. Whall

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. E. Whall. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. E. Whall. The network helps show where T. E. Whall may publish in the future.

Co-authors

The 25 scholars most cited alongside T. E. Whall, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. E. Whall Line = papers co-authored together T. E. Whall links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 166 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Evidence for quantum confinement in the photoluminescence of porous Si and SiGe Applied Physics Letters ·S. Gardelis, John Rimmer, P. Dawson, B. Hamilton, R. A. A. Kubiak, T. E. Whall, E. H. C. Parker	1991	146
2	SiGe heterostructures for FET applications Journal of Physics D Applied Physics ·T. E. Whall, E. H. C. Parker	1998	61
3	Mobility spectrum computational analysis using a maximum entropy approach Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics ·Somchai Kiatgamolchai, M. Myronov, O. A. Mironov, В. Г. Канцер, E. H. C. Parker, T. E. Whall	2002	60
4	Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures Applied Physics Letters ·M. Myronov, Toshifumi Irisawa, O. A. Mironov, Shinji Koh, Y. Shiraki, T. E. Whall, E. H. C. Parker	2002	53
5	Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers Applied Physics Letters ·Michael J. Palmer, G. Braithwaite, T. J. Grasby, P. J. Phillips, Martin J. Prest, E. H. C. Parker, T. E. Whall, C. P. Parry, A.M. Waite, A G R Evans, S. Roy, J.R. Watling, Savaş Kaya, A. Asenov	2001	41
6	Spin transport in germanium at room temperature Applied Physics Letters ·Chengchao Shen, T. Trypiniotis, Kiyoung Lee, S. N. Holmes, Rhodri Mansell, Muhammad Husain, Vishal Ajit Shah, X.V. Li, H. Kurebayashi, I. Farrer, C.H. de Groot, D. R. Leadley, G. R. Bell, E. H. C. Parker, T. E. Whall, D. A. Ritchie, C. H. W. Barnes	2010	40
7	Scattering mechanisms affecting hole transport in remote-doped Si/SiGe heterostructures Journal of Applied Physics ·C. J. Emeleus, T. E. Whall, David W. Smith, R. A. A. Kubiak, E. H. C. Parker, M.J. Kearney	1993	40
8	High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth Semiconductor Science and Technology ·R. J. H. Morris, T. J. Grasby, R. Hammond, M. Myronov, O. A. Mironov, D. R. Leadley, T. E. Whall, E. H. C. Parker, M. T. Currie, C. W. Leitz, Eugene A. Fitzgerald	2004	37
9	p-type delta-doped layers in silicon: Structural and electronic properties Applied Physics Letters ·N. L. Mattey, Mark Dowsett, E. H. C. Parker, T. E. Whall, S. Taylor, J. F. Zhang	1990	36
10	Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations IEEE Transactions on Electron Devices ·Francesco Conzatti, Nuno Serra, David Esseni, Marco De Michielis, Alan Paussa, Pierpaolo Palestri, L. Selmi, S. Thomas, T. E. Whall, D. R. Leadley, E. H. C. Parker, L. Witters, Martin Hÿtch, E. Snoeck, T J Wang, Won Chul Lee, G. Doornbos, G. Vellianitis, M.J.H. van Dal, R.J.P. Lander	2011	32
11	Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures Journal of Applied Physics ·Andrew P. Knights, R. Gwilliam, B.J. Sealy, T. J. Grasby, C. P. Parry, D. J. F. Fulgoni, P. J. Phillips, T. E. Whall, E. H. C. Parker, P. G. Coleman	2001	30
12	Si/SiGe/Si pMOS Performance - alloy scattering and other considerations Thin Solid Films ·T. E. Whall, E. H. C. Parker	2000	30
13	On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures Semiconductor Science and Technology ·R.J.P. Lander, M.J. Kearney, A I Horrell, E. H. C. Parker, P. J. Phillips, T. E. Whall	1997	29
14	Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy Journal of Applied Physics ·C. P. Parry, R. A. A. Kubiak, S. M. Newstead, T. E. Whall, E. H. C. Parker	1992	28
15	The determination of valence band discontinuities in Si/Si1−xGex/Si heterojunctions by capacitance-voltage techniques Journal of Applied Physics ·J. Brighten, I.D. Hawkins, А. R. Peaker, E. H. C. Parker, T. E. Whall	1993	27
16	P-type delta doping in silicon MBE Thin Solid Films ·N. L. Mattey, M. Hopkinson, R. Houghton, Mark Dowsett, D. S. McPhail, T. E. Whall, E. H. C. Parker, G. R. Booker, J. S. Whitehurst	1990	27
17	Optical properties of Si/Si1-xGex heterostructure based wires Solid State Communications ·Y. S. Tang, C.D.W. Wilkinson, (unknown), David W. Smith, T. E. Whall, E. H. C. Parker	1993	27
18	A comparison of the behaviour of Si0.5Ge0.5 alloy during dry and wet oxidation Thin Solid Films ·J.P. Zhang, P.L.F. Hemment, S. M. Newstead, Adrian R. Powell, T. E. Whall, E. H. C. Parker	1992	26
19	Temperature dependence of transport properties of high mobility holes in Ge quantum wells Journal of Applied Physics ·M. Myronov, Toshifumi Irisawa, Shinji Koh, O. A. Mironov, T. E. Whall, E. H. C. Parker, Y. Shiraki	2005	26
20	Elemental boron doping behavior in silicon molecular beam epitaxy Applied Physics Letters ·C. P. Parry, S. M. Newstead, R. D. Barlow, P. D. Augustus, R. A. A. Kubiak, M. G. Dowsett, T. E. Whall, E. H. C. Parker	1991	24

About T. E. Whall

T. E. Whall is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Computational Mechanics, having authored 166 papers that have together received 2.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (89 papers), Advancements in Semiconductor Devices and Circuit Design (86 papers), Semiconductor Quantum Structures and Devices (64 papers), Semiconductor materials and interfaces (37 papers), Silicon Nanostructures and Photoluminescence (32 papers), Integrated Circuits and Semiconductor Failure Analysis (29 papers), Quantum and electron transport phenomena (27 papers) and Silicon and Solar Cell Technologies (23 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.1k citations), Electrical and Electronic Engineering (1.6k citations), Materials Chemistry (567 citations), Biomedical Engineering (383 citations) and Condensed Matter Physics (96 citations). T. E. Whall has collaborated with scholars based in United Kingdom, Germany and Ukraine. Frequent co-authors include E. H. C. Parker, R. A. A. Kubiak, P. J. Phillips, O. A. Mironov, M. Myronov, E. H. C. Parker, S. M. Newstead, D. R. Leadley, M.J. Kearney and David W. Smith. Their work appears in journals such as Applied Physics Letters, Semiconductor Science and Technology, Journal of Applied Physics, Thin Solid Films and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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