S. C. Foo

449 citations

11 papers · 378 · h-index 9

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 11
- GaN-based semiconductor devices and materials 11
Electrical and Electronic Engineering 10
- Semiconductor materials and devices 9
- Radio Frequency Integrated Circuit Design 2
- Silicon Carbide Semiconductor Technologies 1
- Advancements in Semiconductor Devices and Circuit Design 1

Co-authors: Geok Ing Ng (11 shared papers)S. Arulkumaran (11 shared papers)Y. K. T. Maung (7 shared papers)Kian Siong Ang (3 shared papers)Tao Xu (1 shared paper)S. Vicknesh (5 shared papers)Yu Li (1 shared paper)Kumud Ranjan (3 shared papers)
Journals: IEEE Electron Device Letters (3 papers)Applied Physics Letters (3 papers)IEEE Transactions on Electron Devices (1 paper)Japanese Journal of Applied Physics (1 paper)Microelectronics Reliability (1 paper)
Partner nations: Singapore United States Japan

In The Last Decade

S. C. Foo

11 papers receiving 360 citations

Peers

Countries citing papers authored by S. C. Foo

Since Specialization

Citations

This map shows the geographic impact of S. C. Foo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. C. Foo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. C. Foo more than expected).

Fields of papers citing papers by S. C. Foo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. C. Foo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. C. Foo. The network helps show where S. C. Foo may publish in the future.

Co-authors

The 19 scholars most cited alongside S. C. Foo, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. C. Foo Line = papers co-authored together S. C. Foo links everyone, so they are left out of the graph.

All Works

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11 of 11 papers shown

#	Work
1	Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator Applied Physics Letters ·Z. H. Liu, Geok Ing Ng, S. Arulkumaran, Y. K. T. Maung, K. L. Teo, S. C. Foo, (unknown)	2009	94
2	Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon Applied Physics Letters ·G. Ye, H. Wang, S. Arulkumaran, Geok Ing Ng, R. Hofstetter, Yu Li, Manish Anand, Kian Siong Ang, Y. K. T. Maung, S. C. Foo	2013	70
3	High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD IEEE Electron Device Letters ·(unknown), Geok Ing Ng, S. Arulkumaran, Y. K. T. Maung, K. L. Teo, S. C. Foo, (unknown), Tao Xu, (unknown)	2009	64
4	Improved Linearity for Low-Noise Applications in 0.25-$ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric IEEE Electron Device Letters ·Z. H. Liu, Geok Ing Ng, S. Arulkumaran, Y. K. T. Maung, K. L. Teo, S. C. Foo, (unknown)	2010	61
5	Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation Microelectronics Reliability ·Govindo J. Syaranamual, Wardhana Aji Sasangka, Riko I Made, S. Arulkumaran, Geok Ing Ng, S. C. Foo, Chee Lip Gan, Carl V. Thompson	2016	29
6	Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111) Applied Physics Letters ·Mulagumoottil Jesudas Anand, Geok Ing Ng, S. Arulkumaran, C. M. Manoj Kumar, Kumud Ranjan, S. Vicknesh, S. C. Foo, Binit Syamal, Xing Zhou	2015	19
7	Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal Japanese Journal of Applied Physics ·S. Arulkumaran, Geok Ing Ng, Kumud Ranjan, C. M. Manoj Kumar, S. C. Foo, Kian Siong Ang, S. Vicknesh, Surani Bin Dolmanan, Thirumaleshwara N. Bhat, S. Tripathy	2015	18
8	Temperature-Dependent Microwave Noise Characteristics in ALD $\hbox{Al}_{2}\hbox{O}_{3}$/AlGaN/GaN MISHEMTs on Silicon Substrate IEEE Electron Device Letters ·Z. H. Liu, Geok Ing Ng, S. Arulkumaran, Y. K. T. Maung, K. L. Teo, S. C. Foo, S. Vicknesh	2011	9
9	Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·(unknown), Geok Ing Ng, S. Arulkumaran, Y. K. T. Maung, K. L. Teo, S. C. Foo, S. Vicknesh	2011	9
10	Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation Kumud Ranjan, Geok Ing Ng, S. Arulkumaran, S. Vicknesh, S. C. Foo	2019	3
11	AlGaN/GaN MISHEMTs on silicon using atomic layer deposited ZrO2 as gate dielectrics G. Ye, H. Wang, S. Arulkumaran, Geok Ing Ng, R. Hofstetter, Yunwei Li, Mulagumoottil Jesudas Anand, Kian Siong Ang, Y. K. T. Maung, S. C. Foo	2013	2

About S. C. Foo

S. C. Foo is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 11 papers that have together received 378 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (11 papers), Semiconductor materials and devices (9 papers), Ga2O3 and related materials (6 papers), Semiconductor Quantum Structures and Devices (2 papers), Radio Frequency Integrated Circuit Design (2 papers), Silicon Carbide Semiconductor Technologies (1 paper), Metal and Thin Film Mechanics (1 paper) and Advancements in Semiconductor Devices and Circuit Design (1 paper). The work is most often cited by research in Condensed Matter Physics (337 citations), Electronic, Optical and Magnetic Materials (184 citations), Electrical and Electronic Engineering (309 citations), Atomic and Molecular Physics, and Optics (62 citations) and Materials Chemistry (75 citations). S. C. Foo has collaborated with scholars based in Singapore, United States and Japan. Frequent co-authors include Geok Ing Ng, S. Arulkumaran, Y. K. T. Maung, Kian Siong Ang, Tao Xu, S. Vicknesh, Yu Li, Kumud Ranjan, Wardhana Aji Sasangka and Riko I Made. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and Microelectronics Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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S. C. Foo

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About S. C. Foo

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