R.H. Moss

483 citations
22 papers · 384 · h-index 11

Impact in

    • Semiconductor Quantum Structures and Devices
    • Semiconductor materials and interfaces
    • Advanced Chemical Physics Studies
    • Semiconductor materials and devices
    • Advanced Semiconductor Detectors and Materials
    • Semiconductor Lasers and Optical Devices
    • Photonic and Optical Devices
    • Chalcogenide Semiconductor Thin Films

Papers in

R.H. Moss

20 papers receiving 333 citations

Peers

R.H. Moss
Comparison fields: 5 of 36
  • Atomic and Molecular Physics, and Optics 244
  • Electrical and Electronic Engineering 293
  • Materials Chemistry 120
  • Acoustics and Ultrasonics 2
  • Inorganic Chemistry 29
Replace Shinichi Katsuki with:
Shinichi Katsuki Japan
L. Hart United Kingdom
Nobuhiko Ishii Japan
Sidney G. Parker United States
J. G. Eden United States
Janet E. Hails United Kingdom
Hendrik Veenvliet Netherlands
James T. Hall United States
R. Sandrock Germany
B. Razaznejad Sweden
R.H. Moss relative to Shinichi Katsuki Japan Shinichi Katsuki's profile →
Citations per field
00.5×1.5×2.2×
Shinichi Katsuki · 1×
Citations per year

Countries citing papers authored by R.H. Moss

Since Specialization
Citations

This map shows the geographic impact of R.H. Moss's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.H. Moss with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.H. Moss more than expected).

Fields of papers citing papers by R.H. Moss

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.H. Moss. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.H. Moss. The network helps show where R.H. Moss may publish in the future.

Co-authors

The 22 scholars most cited alongside R.H. Moss, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R.H. Moss Line = papers co-authored together R.H. Moss links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 22 papers — load more, or switch the sort, to bring in the rest.

#Work
1 1981108
2 198475
3 198831
4 197425
5 198219
6 198518
7 198415
8 198415
9 198815
10 197415
11 197414
12 19828
13 19845
14 19915
15 19745
16 19774
17 19824
18 19971
19 19921
20 19961

About R.H. Moss

R.H. Moss is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry, Organic Chemistry and Statistics, Probability and Uncertainty, having authored 22 papers that have together received 384 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (11 papers), Semiconductor materials and interfaces (6 papers), Semiconductor materials and devices (5 papers), Advanced Semiconductor Detectors and Materials (4 papers), Semiconductor Lasers and Optical Devices (4 papers), Thin-Film Transistor Technologies (3 papers), Thermal and Kinetic Analysis (2 papers) and Photonic and Optical Devices (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (244 citations), Electrical and Electronic Engineering (293 citations), Materials Chemistry (120 citations), Acoustics and Ultrasonics (2 citations) and Inorganic Chemistry (29 citations). R.H. Moss has collaborated with scholars based in United Kingdom and United States. Frequent co-authors include Julian Evans, M. M. Faktor, P.C. Spurdens, S.S. Wong, A.W. Nelson, M. H. Lyons, Arka Chatterjee, Sandhya Cole, William J. Devlin and W. M. Stobbs. Their work appears in journals such as Journal of Crystal Growth, Electronics Letters, Journal of Electronic Materials, Journal de Physique III and IEEE Transactions on Components Hybrids and Manufacturing Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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