R. Lai

1.6k citations

37 papers · 1.1k · 1 hit paper · h-index 11

Impact in

Astronomy and Astrophysics top 5%
- Astrophysics and Star Formation Studies
- Stellar, planetary, and galactic studies
- Superconducting and THz Device Technology
Spectroscopy top 5%
- Molecular Spectroscopy and Structure

Papers in

Astronomy and Astrophysics 13
- Superconducting and THz Device Technology 11
Electrical and Electronic Engineering 32
- Radio Frequency Integrated Circuit Design 21
- Microwave Engineering and Waveguides 8
- Advancements in Semiconductor Devices and Circuit Design 6
- Advanced Power Amplifier Design 5
- Semiconductor materials and devices 5

Co-authors: William R. Deal (9 shared papers)Vesna Radisic (6 shared papers)X. B. Mei (6 shared papers)Wayne Yoshida (6 shared papers)J. Lee (3 shared papers)T. Gaier (10 shared papers)A. Fung (5 shared papers)Lorene A. Samoska (8 shared papers)
Journals: IEEE Electron Device Letters (3 papers)IEEE Transactions on Microwave Theory and Techniques (3 papers)Astronomy and Astrophysics (3 papers)IEEE Microwave and Wireless Components Letters (2 papers)Journal of Physics Conference Series (1 paper)
Partner nations: United States Germany Netherlands

In The Last Decade

R. Lai

35 papers receiving 1.1k citations

R. Lai's Hit Papers

align trajectories log scale

The Herschel -Heterodyne Instrument for the Far-Infrared (HIFI) 2010 · 509 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2010 Astronomy and Astrophysics

Peers

Countries citing papers authored by R. Lai

Since Specialization

Citations

This map shows the geographic impact of R. Lai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Lai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Lai more than expected).

Fields of papers citing papers by R. Lai

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Lai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Lai. The network helps show where R. Lai may publish in the future.

Co-authors

The 25 scholars most cited alongside R. Lai, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R. Lai Line = papers co-authored together R. Lai links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 37 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	The Herschel -Heterodyne Instrument for the Far-Infrared (HIFI) Astronomy and Astrophysics ·Th. de Graauw, F. Helmich, T. G. Phillips, JÜRGEN STUTZKI, Emmanuel Caux, Nick D. Whyborn, Pieter Dieleman, Peter Roelfsema Hit paper breakdown →	2010	509
2	Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz R. Lai, X. B. Mei, William R. Deal, Wayne Yoshida, Y. M. Kim, P.H. Liu, J. Lee, J. Uyeda	2007	208
3	Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs IEEE Microwave and Wireless Components Letters ·William R. Deal, Kevin M. K. H. Leong, Vesna Radisic, Stephen J. Sarkozy, Ben S. Gorospe, J. Lee, P. H. Liu, Wayne Yoshida	2011	90
4	The CHESS spectral survey of star forming regions: Peering into the protostellar shock L1157-B1 Astronomy and Astrophysics ·Bertrand Lefloch, Sylvie Cabrit, Claudio Codella, G. Melnick, Jose Cernicharo, E. Caux, M. Benedettini, Adwin C. A. Boogert	2010	52
5	35-nm InP HEMT SMMIC Amplifier With 4.4-dB Gain at 308 GHz IEEE Electron Device Letters ·X. B. Mei, Wayne Yoshida, William R. Deal, P. H. Liu, J. Lee, J. Uyeda, Linh Dang, Jingye Wang	2007	34
6	0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band CaltechAUTHORS (California Institute of Technology) ·Ronald Grundbacher, R. Lai, M. Barsky, Roger Tsai, T. Gaier, Sander Weinreb, Douglas E. Dawson, J. J. Bautista	2003	33
7	Demonstration of a 311-GHz Fundamental Oscillator Using InP HBT Technology IEEE Transactions on Microwave Theory and Techniques ·Vesna Radisic, DONALD J. SAWDAI, Dennis W. Scott, William R. Deal, Linh Dang, D. Li, J. Chen, A. Fung	2007	31
8	Temperature-dependent small-signal and noise parameter measurements and modeling on InP HEMTs IEEE Transactions on Microwave Theory and Techniques ·M.R. Murti, J. Laskar, S. Nuttinck, Seunghyup Yoo, Anand Raghavan, Josh Bergman, J. J. Bautista, R. Lai	2000	30
9	Cryogenic, X-band and Ka-band InP HEMT based LNAs for the Deep Space Network J. J. Bautista, James Bowen, N.E. Fernandez, Z. Fujiwara, J. R. Loreman, S. M. Petty, Jack Prater, R. Grunbacher	2002	22
10	Demonstration of 184 and 255-GHz Amplifiers Using InP HBT Technology IEEE Microwave and Wireless Components Letters ·Vesna Radisic, DONALD J. SAWDAI, Dennis W. Scott, William R. Deal, Linh Dang, D. Li, Abdullah Cavus, A. Fung	2008	19
11	35nm InP HEMT for Millimeter and Sub-Millimeter Wave Applications X. B. Mei, Wayne Yoshida, William R. Deal, P.H. Liu, J. Lee, J. Uyeda, Linh Dang, J. Wang	2007	11
12	The Effect of Gate Metal Interdiffusion on Reliability Performance in GaAs PHEMTs IEEE Electron Device Letters ·Y.C. Chou, Denise L. Leung, Ronald Grundbacher, R. Lai, P.H. Liu, Qiang Kan, M. Biedenbender, David C. Eng	2004	11
13	Innovative nitride passivated pseudomorphicGaAs HEMTs IEEE Electron Device Letters ·Yu-Ting Chou, R. Lai, G.P. Li, Jun Hua, Peter Nam, Ronald Grundbacher, H.K. Kim, Yunju Ra	2003	11
14	Ultra-low-noise indium-phosphide MMIC amplifiers for 85-115 GHz IEEE Transactions on Microwave Theory and Techniques ·John W. Archer, R. Lai, Russell G. Gough	2001	11
15	Sub-mW Operation of InP HEMT X-Band Low-Noise Amplifiers for Low Power Applications Chu-Hsu Lin, X. B. Mei, Y.C. Chou, L. S. Lee, Jun-Yao Yang, Masayoshi Nishimoto, P. H. Liu, R. To	2009	10
16	Silicon evaluation of faster than at-speed transition delay tests S. Chakravarty, Narendra Devta-Prasanna, Arun Gunda, Junxia Ma, Fan Yang, Hang Guo, R. Lai, Dianqiang Li	2012	8
17	A HIFI preview of warm molecular gas aroundχCygni: first detection of H2O emission toward an S-type AGB star Astronomy and Astrophysics ·K. Justtanont, Leen Decin, F. L. Schöier, M. Maercker, Hans Olofsson, Valentin Bujarrabal, Anthony P. Marston, David Teyssier	2010	8
18	High performance voltage controlled bi-directional amplifiers in support of component reuse for large aperture phase array Jun-Yao Yang, Y. Chung, Masayoshi Nishimoto, R. Lai, Roger Tsai, R.S. Kagiwada, Cheng Chih Yang	2003	7
19	Temperature-dependent noise parameters and modeling of InP/InAlAs/InGaAs HEMTs M.R. Murti, L. Yoo, Anand Raghavan, S. Nuttinck, J. Laskar, J. J. Bautista, R. Lai	2002	6
20	On the investigation of gate metal interdiffusion in GaAs HEMTs Y.C. Chou, Denise L. Leung, R. Lai, Ronald Grundbacher, P.H. Liu, M. Biedenbender, Qiang Kan, David C. Eng	2003	5

About R. Lai

R. Lai is a scholar working on Astronomy and Astrophysics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Spectroscopy, having authored 37 papers that have together received 1.1k indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (21 papers), Semiconductor Quantum Structures and Devices (13 papers), Superconducting and THz Device Technology (11 papers), Microwave Engineering and Waveguides (8 papers), GaN-based semiconductor devices and materials (7 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers), Advanced Power Amplifier Design (5 papers) and Semiconductor materials and devices (5 papers). The work is most often cited by research in Astronomy and Astrophysics (678 citations), Spectroscopy (283 citations), Atmospheric Science (202 citations), Electrical and Electronic Engineering (576 citations) and Condensed Matter Physics (108 citations). R. Lai has collaborated with scholars based in United States, Germany and Netherlands. Frequent co-authors include William R. Deal, Vesna Radisic, X. B. Mei, Wayne Yoshida, J. Lee, T. Gaier, A. Fung, Lorene A. Samoska, J. Uyeda and P.H. Liu. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Microwave Theory and Techniques, Astronomy and Astrophysics, IEEE Microwave and Wireless Components Letters and Journal of Physics Conference Series.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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R. Lai

R. Lai's Hit Papers

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Fields of papers citing papers by R. Lai

All Works

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