Peter Friedrichs

2.0k citations

89 papers · 1.6k · h-index 23

Impact in

Electrical and Electronic Engineering top 2%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electromagnetic Compatibility and Noise Suppression
- Advanced DC-DC Converters
- Multilevel Inverters and Converters
- HVDC Systems and Fault Protection
Ceramics and Composites top 10%

Papers in

Electrical and Electronic Engineering 87
- Silicon Carbide Semiconductor Technologies 83
- Semiconductor materials and devices 28
- Electromagnetic Compatibility and Noise Suppression 23
- Advanced DC-DC Converters 18
- Advancements in Semiconductor Devices and Circuit Design 17
- Multilevel Inverters and Converters 15
- Silicon and Solar Cell Technologies 10
Mechanical Engineering 14

Co-authors: Dethard Peters (28 shared papers)D. Stephani (26 shared papers)Reinhold Schörner (24 shared papers)H. Mitlehner (14 shared papers)Roland Rupp (8 shared papers)Edmund P. Burte (3 shared papers)Rudolf Elpelt (9 shared papers)Karl Otto Dohnke (9 shared papers)
Journals: Materials science forum (29 papers)Applied Physics Letters (3 papers)IEEE Transactions on Electron Devices (3 papers)Japanese Journal of Applied Physics (2 papers)IEEE Electron Device Letters (2 papers)
Partner nations: Germany Canada Japan

In The Last Decade

Peter Friedrichs

87 papers receiving 1.5k citations

Peers

Countries citing papers authored by Peter Friedrichs

Since Specialization

Citations

This map shows the geographic impact of Peter Friedrichs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Peter Friedrichs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Peter Friedrichs more than expected).

Fields of papers citing papers by Peter Friedrichs

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Peter Friedrichs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Peter Friedrichs. The network helps show where Peter Friedrichs may publish in the future.

Co-authors

The 25 scholars most cited alongside Peter Friedrichs, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Peter Friedrichs Line = papers co-authored together Peter Friedrichs links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 89 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype IEEE Electron Device Letters ·Reinhold Schomer, Peter Friedrichs, Dethard Peters, D. Stephani	1999	191
2	A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005. ·S.D. Round, Marcelo Lobo Heldwein, Johann W. Kolar, I.W. Hofsajer, Peter Friedrichs	2005	100
3	Strategic Considerations for Unipolar SiC Switch Options: JFET vs. MOSFET Conference record ·Michael Treu, Roland Rupp, Peter Blaschitz, Kathrin Rüschenschmidt, T. Sekinger, Peter Friedrichs, Rudolf Elpelt, Dethard Peters	2007	67
4	Detailed investigation of n-channel enhancement 6H-SiC MOSFETs IEEE Transactions on Electron Devices ·Reinhold Schörner, Peter Friedrichs, Dethard Peters	1999	62
5	Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories Materials science forum ·Peter Friedrichs, H. Mitlehner, R. Kaltschmidt, Ulrich Weinert, Wolfgang Bartsch, Christian Hecht, Karl Otto Dohnke, Benno Weis, D. Stephani	2000	54
6	Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation Applied Physics Letters ·Reinhold Schörner, Peter Friedrichs, Dethard Peters, D. Stephani, Sima Dimitrijev, Philippe Jamet	2002	53
7	Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance Applied Physics Letters ·Dethard Peters, Reinhold Schörner, K. Hölzlein, Peter Friedrichs	1997	51
8	Silicon carbide power devices - status and upcoming challenges Peter Friedrichs	2007	47
9	Dielectric strength of thermal oxides on 6H-SiC and 4H-SiC Applied Physics Letters ·Peter Friedrichs, Edmund P. Burte, Reinhold Schörner	1994	44
10	Interface properties of metal-oxide-semiconductor structures on n-type 6H and 4H-SiC Journal of Applied Physics ·Peter Friedrichs, Edmund P. Burte, Reinhold Schörner	1996	42
11	An 1800 V triple implanted vertical 6H-SiC MOSFET IEEE Transactions on Electron Devices ·Dethard Peters, Reinhold Schörner, Peter Friedrichs, J. Völkl, H. Mitlehner, D. Stephani	1999	40
12	Silicon carbide power‐device products – Status and upcoming challenges with a special attention to traditional, nonmilitary industrial applications physica status solidi (b) ·Peter Friedrichs	2008	38
13	Silicon carbide power devices - current developments and potential applications Peter Friedrichs, Roland Rupp	2005	37
14	Silicon carbide power semiconductors — new opportunities for high efficiency Peter Friedrichs	2008	37
15	Application-Oriented Unipolar Switching SiC Devices Materials science forum ·Peter Friedrichs, H. Mitlehner, Reinhold Schörner, Karl Otto Dohnke, Rudolf Elpelt, D. Stephani	2002	37
16	Robustness of SiC JFET in Short-Circuit Modes IEEE Electron Device Letters ·N. Boughrara, N. Boughrara, S. Moumen, Sabrine Moumen, Stéphane Lefebvre, Zoubir Khatir, Peter Friedrichs, J.C. Faugières, J.C. Faugières	2008	35
17	4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications Materials science forum ·Dethard Peters, Adolf Schöner, Peter Friedrichs, D. Stephani	2003	33
18	Turn-off and short circuit behaviour of 4H SiC JFETs Benno Weis, Martin Braun, Peter Friedrichs	2002	33
19	SiC power devices with low on-resistance for fast switching applications Peter Friedrichs, H. Mitlehner, Karl Otto Dohnke, Dethard Peters, Reinhold Schörner, Ulrich Weinert, E. Baudelot, D. Stephani	2002	32
20	Stacked high voltage switch based on SiC VJFETs Peter Friedrichs, H. Mitlehner, Reinhold Schörner, Karl Otto Dohnke, Rudolf Elpelt, D. Stephani	2004	32

About Peter Friedrichs

Peter Friedrichs is a scholar working on Electrical and Electronic Engineering, Mechanical Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Ceramics and Composites, having authored 89 papers that have together received 1.6k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (83 papers), Semiconductor materials and devices (28 papers), Electromagnetic Compatibility and Noise Suppression (23 papers), Advanced DC-DC Converters (18 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), Multilevel Inverters and Converters (15 papers), Copper Interconnects and Reliability (11 papers) and Silicon and Solar Cell Technologies (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.6k citations), Ceramics and Composites (69 citations), Electronic, Optical and Magnetic Materials (150 citations), Atomic and Molecular Physics, and Optics (204 citations) and Condensed Matter Physics (49 citations). Peter Friedrichs has collaborated with scholars based in Germany, Canada and Japan. Frequent co-authors include Dethard Peters, D. Stephani, Reinhold Schörner, H. Mitlehner, Roland Rupp, Edmund P. Burte, Rudolf Elpelt, Karl Otto Dohnke, S.D. Round and Johann W. Kolar. Their work appears in journals such as Materials science forum, Applied Physics Letters, IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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