Mark W. Holtz
Impact in
- Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
-
- Ga2O3 and related materials
Papers in
-
- GaN-based semiconductor devices and materials 67
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- Ga2O3 and related materials 36
- Co-authors
- Sergey A. Nikishin (51 shared papers)Henryk Temkin (37 shared papers)Ayrton Andre Bernussi (19 shared papers)Zhaoyang Fan (16 shared papers)Vladimir V. Kuryatkov (37 shared papers)Yong Jie Zhao (10 shared papers)Jordan M. Berg (11 shared papers)T. Prokofyeva (14 shared papers)
- Journals
- Journal of Applied Physics (29 papers)Applied Physics Letters (27 papers)Journal of Electronic Materials (6 papers)Japanese Journal of Applied Physics (4 papers)Journal of Physics D Applied Physics (3 papers)
- Partner nations
- United StatesGermanyRussia
In The Last Decade
Mark W. Holtz
170 papers receiving 4.5k citations
Peers
Comparison fields: 5 of 82
- Condensed Matter Physics 1.7k
- Electronic, Optical and Magnetic Materials 1.4k
- Polymers and Plastics 667
- Materials Chemistry 2.0k
- Electrical and Electronic Engineering 2.4k
Countries citing papers authored by Mark W. Holtz
This map shows the geographic impact of Mark W. Holtz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mark W. Holtz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mark W. Holtz more than expected).
Fields of papers citing papers by Mark W. Holtz
This network shows the impact of papers produced by Mark W. Holtz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mark W. Holtz. The network helps show where Mark W. Holtz may publish in the future.
Co-authors
The 25 scholars most cited alongside Mark W. Holtz, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 176 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | 2010 | 255 | |
| 2 | 2001 | 235 | |
| 3 | 1999 | 183 | |
| 4 | 2012 | 181 | |
| 5 | 2013 | 126 | |
| 6 | 1996 | 121 | |
| 7 | 2012 | 110 | |
| 8 | Raman Spectroscopy of Carbon Materials | 1996 | 108 |
| 9 | 2000 | 97 | |
| 10 | 2011 | 96 | |
| 11 | 1998 | 94 | |
| 12 | 2004 | 86 | |
| 13 | 2010 | 82 | |
| 14 | 2005 | 79 | |
| 15 | 1988 | 77 | |
| 16 | 2005 | 73 | |
| 17 | 2013 | 70 | |
| 18 | 2003 | 69 | |
| 19 | 2014 | 67 | |
| 20 | 1999 | 63 |
About Mark W. Holtz
Mark W. Holtz is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 176 papers that have together received 4.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (67 papers), Semiconductor materials and devices (40 papers), Ga2O3 and related materials (36 papers), Semiconductor Quantum Structures and Devices (32 papers), Metal and Thin Film Mechanics (28 papers), Diamond and Carbon-based Materials Research (20 papers), Chalcogenide Semiconductor Thin Films (15 papers) and ZnO doping and properties (15 papers). The work is most often cited by research in Condensed Matter Physics (1.7k citations), Electronic, Optical and Magnetic Materials (1.4k citations), Polymers and Plastics (667 citations), Materials Chemistry (2.0k citations) and Electrical and Electronic Engineering (2.4k citations). Mark W. Holtz has collaborated with scholars based in United States, Germany and Russia. Frequent co-authors include Sergey A. Nikishin, Henryk Temkin, Ayrton Andre Bernussi, Zhaoyang Fan, Vladimir V. Kuryatkov, Yong Jie Zhao, Jordan M. Berg, T. Prokofyeva, Yanhan Zhu and Mohammad A. Nazari. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Journal of Electronic Materials, Japanese Journal of Applied Physics and Journal of Physics D Applied Physics.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.