L. C. Le

430 citations

22 papers · 368 · h-index 12

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 22
- GaN-based semiconductor devices and materials 22
Atomic and Molecular Physics, and Optics 13
- Semiconductor Quantum Structures and Devices 13

Co-authors: Desheng Jiang (20 shared papers)Degang Zhao (13 shared papers)J.J. Zhu (13 shared papers)Ping Chen (12 shared papers)Jing Yang (9 shared papers)Ziyu Liu (4 shared papers)Hui Yang (6 shared papers)Z.S. Liu (6 shared papers)
Journals: Journal of Applied Physics (6 papers)Journal of Alloys and Compounds (5 papers)Semiconductor Science and Technology (2 papers)physica status solidi (a) (2 papers)Vacuum (1 paper)
Partner nations: China

In The Last Decade

L. C. Le

22 papers receiving 346 citations

Peers

Countries citing papers authored by L. C. Le

Since Specialization

Citations

This map shows the geographic impact of L. C. Le's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. C. Le with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. C. Le more than expected).

Fields of papers citing papers by L. C. Le

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. C. Le. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. C. Le. The network helps show where L. C. Le may publish in the future.

Co-authors

The 25 scholars most cited alongside L. C. Le, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. C. Le Line = papers co-authored together L. C. Le links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes Applied Physics Letters ·L. C. Le, D. G. Zhao, Desheng Jiang, L. Li, L. Wu, P. Chen, Ziyu Liu, Z. C. Li, Yu-Mei Fan, Jia-Ji Zhu, H. Wang, Shuhan Zhang, Hung‐Chih Yang	2012	56
2	Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films Journal of Applied Physics ·Jing Yang, Degang Zhao, Desheng Jiang, P. Chen, Zong-Lin Liu, L. C. Le, X. J. Li, Xiaoliang He, J. P. Liu, S. M. Zhang, H. Wang, J.J. Zhu, Hui Yang	2014	40
3	Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes Optics Express ·L. C. Le, Desheng Zhao, Desheng Jiang, P Chen, Z S Liu, Jie Yang, Xiaoliang He, X. J. Li, J P Liu, Jianfeng Zhu, S M Zhang, Yang Hui	2014	28
4	Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness Journal of Applied Physics ·Jing Yang, Degang Zhao, Desheng Jiang, Ping Chen, J.J. Zhu, Zongshun Liu, L. C. Le, X. J. Li, Xiaoliang He, J. P. Liu, Huali Yang, Y. T. Zhang, Gaoming Du	2015	27
5	GaN high electron mobility transistors with AlInN back barriers Journal of Alloys and Compounds ·Xin He, Desheng Zhao, Desheng Jiang, Jianfeng Zhu, Ping Chen, Z.S. Liu, L. C. Le, Jie Yang, X.J. Li, J.P. Liu, Liqun Zhang, Hang Yang	2015	26
6	Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition Thin Solid Films ·Xiaoliang He, Degang Zhao, Desheng Jiang, Z.S. Liu, Ping Chen, L. C. Le, Jing Yang, X.J. Li, Shuxiao Zhang, J.J. Zhu, Huanye Wang, Hui Yang	2014	25
7	Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer Journal of Applied Physics ·P. Chen, Meixin Feng, Desheng Jiang, Degang Zhao, Ziyu Liu, L. Li, Liyan Wu, L. C. Le, J.J. Zhu, H. Wang, S. M. Zhang, Hui Yang	2012	25
8	Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness Journal of Applied Physics ·L. C. Le, D. G. Zhao, Desheng Jiang, L. Li, L. Wu, P. Chen, Ziyu Liu, Jung‐Yen Yang, X. J. Li, Xiahong He, Jia-Ji Zhu, H. Wang, S. M. Zhang, Hung‐Chih Yang	2013	19
9	Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers Journal of Alloys and Compounds ·Jing Yang, Degang Zhao, Desheng Jiang, Ping Chen, J.J. Zhu, Z.S. Liu, L. C. Le, Xinlei He, X.J. Li, Huali Yang, Yuliang Zhang, Gaoming Du	2015	15
10	Effect of In incorporation parameters on the electroluminescence of blue–violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition Journal of Alloys and Compounds ·Degang Zhao, Desheng Jiang, L. C. Le, Liangliang Wu, Lili Li, J.J. Zhu, Huanye Wang, Z.S. Liu, Shuxiao Zhang, Quanjie Jia, Hui Yang	2012	14
11	Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN Semiconductor Science and Technology ·Liangliang Wu, Desheng Zhao, Desheng Jiang, P Chen, L. C. Le, L Li, Z S Liu, S M Zhang, Jie Zhu, Haonan Wang, B S Zhang, Hao Yang	2013	13
12	The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN Journal of Applied Physics ·X. J. Li, Desheng Zhao, Desheng Jiang, Zongshun Liu, Ping Chen, J.J. Zhu, L. C. Le, Jing Yang, Xinlei He, S. M. Zhang, B. S. Zhang, J. P. Liu, Haoyu Yang	2014	11
13	Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire Journal of Alloys and Compounds ·Degang Zhao, Desheng Jiang, Liangliang Wu, L. C. Le, Lili Li, Ping Chen, Z.S. Liu, Jia-Ji Zhu, H. Wang, Shuxiao Zhang, Hui Yang	2012	9
14	Positive and negative effects of oxygen in thermal annealing of p-type GaN Semiconductor Science and Technology ·Liang Wu, Dan Zhao, Desheng Jiang, P Chen, L. C. Le, L Li, Z S Liu, S M Zhang, J.J. Zhu, Haonan Wang, B S Zhang, Xing Yang	2012	8
15	Effect of light Si-doping on the near-band-edge emissions in high quality GaN Journal of Applied Physics ·L. C. Le, Degang Zhao, Desheng Jiang, Leilei Wu, L. Li, P. Chen, Ziyu Liu, J.J. Zhu, H. Wang, Shiwei zhang, Hui Yang	2012	8
16	Differential resistance of GaN-based laser diodes with and without polarization effect Applied Optics ·Xun Li, Zongshun Liu, Degang Zhao, Desheng Jiang, Ping Chen, J.J. Zhu, Jing Yang, L. C. Le, Wei Liu, Xiulan He, X. J. Li, Feng Liang, Lingqian Zhang, J. Q. Liu, Hang Yang	2015	7
17	XPS study of impurities in Si‐doped AlN film Surface and Interface Analysis ·Feng Liang, Ping Chen, Duo Zhao, Di Jiang, Zengying Zhao, Zongshun Liu, Jia-Ji Zhu, Jing Yang, L. C. Le, Wei Liu, Xiangyu He, X. J. Li, X Li, S. T Liu, Hui Yang, J. P. Liu, Lingqian Zhang, Y. T. Zhang, Gaoming Du	2016	7
18	Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells physica status solidi (a) ·Jun Yang, Degang Zhao, Desheng Jiang, Ping Chen, Zongshun Liu, L. C. Le, Xiaoliang He, X. J. Li, Hui Yang	2014	7
19	The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN‐based multiple quantum well laser diodes physica status solidi (a) ·Ping Chen, Degang Zhao, Desheng Jiang, J.J. Zhu, Zongshun Liu, L. C. Le, Jing Yang, Xun Li, Lingqian Zhang, J. P. Liu, S. M. Zhang, Hui Yang	2015	7
20	Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses Vacuum ·Jing Yang, Degang Zhao, Desheng Jiang, Ping Chen, J.J. Zhu, Z.S. Liu, L. C. Le, Xinlei He, X.J. Li, J.P. Liu, Liqun Zhang, Hui Yang	2016	6

About L. C. Le

L. C. Le is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Materials Chemistry, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 22 papers that have together received 368 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (22 papers), Semiconductor Quantum Structures and Devices (13 papers), ZnO doping and properties (8 papers), Ga2O3 and related materials (7 papers), Semiconductor materials and devices (5 papers), Metal and Thin Film Mechanics (5 papers), Nanowire Synthesis and Applications (2 papers) and Photocathodes and Microchannel Plates (2 papers). The work is most often cited by research in Condensed Matter Physics (349 citations), Electronic, Optical and Magnetic Materials (181 citations), Atomic and Molecular Physics, and Optics (134 citations), Materials Chemistry (137 citations) and Mechanics of Materials (58 citations). L. C. Le has collaborated with scholars based in China. Frequent co-authors include Desheng Jiang, Degang Zhao, J.J. Zhu, Ping Chen, Jing Yang, Ziyu Liu, Hui Yang, Z.S. Liu, Desheng Zhao and Jia-Ji Zhu. Their work appears in journals such as Journal of Applied Physics, Journal of Alloys and Compounds, Semiconductor Science and Technology, physica status solidi (a) and Vacuum.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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L. C. Le

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