J.-P. Noël

1.3k citations

54 papers · 1.1k · h-index 16

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Photonic and Optical Devices

Papers in

Atomic and Molecular Physics, and Optics 28
- Semiconductor Quantum Structures and Devices 18
- Semiconductor materials and interfaces 12
Electrical and Electronic Engineering 45
- Semiconductor materials and devices 24
- Advancements in Semiconductor Devices and Circuit Design 11
- Silicon and Solar Cell Technologies 8
- Thin-Film Transistor Technologies 8

Co-authors: Derek C. Houghton (25 shared papers)Nelson L. Rowell (23 shared papers)Mike L. W. Thewalt (8 shared papers)L. C. Lenchyshyn (8 shared papers)Doug D. Perovic (5 shared papers)James C. Sturm (6 shared papers)Hari C. Manoharan (2 shared papers)J.M. McGregor (2 shared papers)
Journals: Applied Physics Letters (5 papers)Journal of Applied Physics (4 papers)Journal of Electronic Materials (3 papers)Materials Science and Engineering B (2 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: Canada United States France

In The Last Decade

J.-P. Noël

53 papers receiving 1.0k citations

Peers

Countries citing papers authored by J.-P. Noël

Since Specialization

Citations

This map shows the geographic impact of J.-P. Noël's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.-P. Noël with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.-P. Noël more than expected).

Fields of papers citing papers by J.-P. Noël

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.-P. Noël. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.-P. Noël. The network helps show where J.-P. Noël may publish in the future.

Co-authors

The 25 scholars most cited alongside J.-P. Noël, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.-P. Noël Line = papers co-authored together J.-P. Noël links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 54 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Well-resolved band-edge photoluminescence of excitons confined in strained Si1−x Gex quantum wells Physical Review Letters ·James C. Sturm, Hari C. Manoharan, L. C. Lenchyshyn, Mike L. W. Thewalt, Nelson L. Rowell, J.-P. Noël, Derek C. Houghton	1991	253
2	Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloys Applied Physics Letters ·J.-P. Noël, Nelson L. Rowell, Derek C. Houghton, Doug D. Perovic	1990	142
3	Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys IEEE Transactions on Electron Devices ·Tajinder Manku, J.M. McGregor, Arokia Nathan, David J. Roulston, J.-P. Noël, D.C. Houghton	1993	82
4	Luminescence origins in molecular beam epitaxial Si1−xGex Applied Physics Letters ·J.-P. Noël, Nelson L. Rowell, Derek C. Houghton, A. Wang, Doug D. Perovic	1992	72
5	High quantum efficiency photoluminescence from localized excitons in Si1−xGex Applied Physics Letters ·L. C. Lenchyshyn, Mike L. W. Thewalt, James C. Sturm, Peter V. Schwartz, E.J. Prinz, Nelson L. Rowell, J.-P. Noël, Derek C. Houghton	1992	66
6	New technique for the characterization of Si/SiGe layers using heterostructure MOS capacitors Solid-State Electronics ·Sorin Petre Voinigescu, K. Iniewski, R. Lisak, C.A.T. Salama, J.-P. Noël, D.C. Houghton	1994	44
7	Microvoid formation in low-temperature molecular-beam-epitaxy-grown silicon Physical review. B, Condensed matter ·D. D. Perovic, George C. Weatherly, Peter J. Simpson, Peter J. Schultz, T. E. Jackman, G. C. Aers, J.-P. Noël, Derek C. Houghton	1991	41
8	Photoluminescence mechanisms in thin Si1−x Gex quantum wells Physical review. B, Condensed matter ·L. C. Lenchyshyn, Mike L. W. Thewalt, Derek C. Houghton, J.-P. Noël, Nelson L. Rowell, James C. Sturm, X. Xiao	1993	29
9	Interfacial properties of metal–insulator–semiconductor capacitors on GaAs(110) Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·L. J. Huang, Kuppusamy Rajesh, W. M. Lau, S. J. Ingrey, D. Landheer, J.-P. Noël, Z. H. Lu	1995	25
10	Si/SiGe digital optoelectronic switch IEEE Electron Device Letters ·Stephen Kovacic, John G. Simmons, Kai Chen Song, J.-P. Noël, Derek C. Houghton	1991	19
11	Elastic relaxation of dry-etched Si/SiGe quantum dots Physical review. B, Condensed matter ·Anton A. Darhuber, Thomas Grill, J. Stangl, Gerrit E. W. Bauer, D. J. Lockwood, J.-P. Noël, P. D. Wang +1 other	1998	18
12	Measured In-plane hole drift and hall mobility in heavily-doped strained p-type Si1−xGex Journal of Electronic Materials ·J.M. McGregor, Tajinder Manku, J.-P. Noël, David J. Roulston, Arokia Nathan, Derek C. Houghton	1993	18
13	Electron microscopy study of microvoid generation in molecular-beam epitaxy-grown silicon Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·D. D. Perovic, George C. Weatherly, J.-P. Noël, Derek C. Houghton	1991	17
14	Visible photoluminescence from biexcitons in Si1-xGex quantum wells Solid State Communications ·T. Steiner, L. C. Lenchyshyn, Mike L. W. Thewalt, J.-P. Noël, Nelson L. Rowell, Derek C. Houghton	1994	17
15	Theory and observation of enhanced, high field hole transport in Si/sub 1-x/Ge/sub x/ quantum well p-MOSFETs IEEE Transactions on Electron Devices ·K. Bhaumik, Yosi Shacham‐Diamand, J.-P. Noël, Joze Bevk, L. C. Feldman	1996	17
16	Architecture, design and technology guidelines for crosspoint memories HAL (Le Centre pour la Communication Scientifique Directe) ·Alexandre Levisse, Pablo Royer, B. Giraud, J.-P. Noël, Mathieu Moreau, J.M. Portal	2017	16
17	UT2B-FDSOI device architecture dedicated to low power design techniques J.-P. Noël, Olivier Thomas, M.-A. Jaud, Claire Fenouillet-Beranger, P. Rivallin, P. Scheiblin, T. Poiroux, F. Andrieu	2010	15
18	Si-Based Photonic Devices by MBE MRS Proceedings ·Derek C. Houghton, J.-P. Noël, Nelson L. Rowell	1991	13
19	Photoluminescence spectroscopy of localized excitons in Si1−xGex Journal of Electronic Materials ·L. C. Lenchyshyn, Mike L. W. Thewalt, James C. Sturm, Peter V. Schwartz, Nelson L. Rowell, J.-P. Noël, Derek C. Houghton	1993	13
20	3D RRAMs with Gate-All-Around Stacked Nanosheet Transistors for In-Memory-Computing HAL (Le Centre pour la Communication Scientifique Directe) ·Sylvain Barraud, Mona Ezzadeen, D. Bosch, T. Dubreuil, N. Castellani, V. Meli, Jean‐Michel Hartmann, M. Mouhdach	2020	13

About J.-P. Noël

J.-P. Noël is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering and Computational Mechanics, having authored 54 papers that have together received 1.1k indexed citations. Recurring topics across this work include Silicon Nanostructures and Photoluminescence (25 papers), Semiconductor materials and devices (24 papers), Semiconductor Quantum Structures and Devices (18 papers), Semiconductor materials and interfaces (12 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Nanowire Synthesis and Applications (10 papers), Silicon and Solar Cell Technologies (8 papers) and Thin-Film Transistor Technologies (8 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (608 citations), Electrical and Electronic Engineering (866 citations), Materials Chemistry (581 citations), Biomedical Engineering (246 citations) and Condensed Matter Physics (27 citations). J.-P. Noël has collaborated with scholars based in Canada, United States and France. Frequent co-authors include Derek C. Houghton, Nelson L. Rowell, Mike L. W. Thewalt, L. C. Lenchyshyn, Doug D. Perovic, James C. Sturm, Hari C. Manoharan, J.M. McGregor, Tajinder Manku and David J. Roulston. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Electronic Materials, Materials Science and Engineering B and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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J.-P. Noël

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