John Niroula

601 citations
26 papers · 413 · h-index 12

Impact in

  • Condensed Matter Physics top 5%
    • GaN-based semiconductor devices and materials
  • Electrical and Electronic Engineering top 10%
    • Advanced Memory and Neural Computing
    • Semiconductor materials and devices
    • Ferroelectric and Negative Capacitance Devices
    • Silicon Carbide Semiconductor Technologies
    • Advancements in Semiconductor Devices and Circuit Design

Papers in

  • Electrical and Electronic Engineering 23
    • Silicon Carbide Semiconductor Technologies 12
    • Semiconductor materials and devices 10
    • Advanced Memory and Neural Computing 5
    • Ferroelectric and Negative Capacitance Devices 4
    • Radio Frequency Integrated Circuit Design 4
  • Condensed Matter Physics 20
    • GaN-based semiconductor devices and materials 20
Co-authors
Tomás Palacios (17 shared papers)Matthew Marinella (5 shared papers)Robin Jacobs-Gedrim (5 shared papers)Sapan Agarwal (5 shared papers)Nadim Chowdhury (12 shared papers)Qingyun Xie (13 shared papers)Conrad D. James (4 shared papers)Alexander H. Hsia (1 shared paper)
Journals
IEEE Electron Device Letters (5 papers)Applied Physics Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)Journal of Computational Electronics (1 paper)IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (1 paper)
Partner nations
United StatesBangladeshUnited Arab Emirates

In The Last Decade

John Niroula

23 papers receiving 408 citations

Peers

John Niroula
Comparison fields: 5 of 25
  • Condensed Matter Physics 178
  • Electrical and Electronic Engineering 365
  • Electronic, Optical and Magnetic Materials 54
  • Cellular and Molecular Neuroscience 48
  • Polymers and Plastics 31
Replace Ashwani Kumar with:
Ashwani Kumar India
Ko‐Tao Lee Taiwan
Seong Kwang Kim South Korea
Ming Huang China
Christian D. Matthus Germany
Shamiul Alam United States
Lorenzo Fratino France
D. Crotti Belgium
Wenxing Lv China
John Niroula relative to Ashwani Kumar India Ashwani Kumar's profile →
Citations per field
00.5×1.5×1.9×
Ashwani Kumar · 1×
Citations per year

Countries citing papers authored by John Niroula

Since Specialization
Citations

This map shows the geographic impact of John Niroula's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John Niroula with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John Niroula more than expected).

Fields of papers citing papers by John Niroula

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John Niroula. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John Niroula. The network helps show where John Niroula may publish in the future.

Co-authors

The 25 scholars most cited alongside John Niroula, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with John Niroula Line = papers co-authored together John Niroula links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 26 papers — load more, or switch the sort, to bring in the rest.

#Work
1
Multiscale Co-Design Analysis of Energy, Latency, Area, and Accuracy of a ReRAM Analog Neural Training Accelerator
IEEE Journal on Emerging and Selected Topics in Circuits and Systems ·Matthew Marinella, Sapan Agarwal, Alexander H. Hsia, Isaac Richter, Robin Jacobs-Gedrim, John Niroula, Steven J. Plimpton, Engin İpek, Conrad D. James
2018136
2
Using Floating-Gate Memory to Train Ideal Accuracy Neural Networks
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits ·Sapan Agarwal, Diana R. Garland, John Niroula, Robin Jacobs-Gedrim, Alex Hsia, Michael S. Van Heukelom, Elliot J. Fuller, B.L. Draper, Matthew Marinella
201933
3
Field-induced Acceptor Ionization in Enhancement-mode GaN p-MOSFETs
Nadim Chowdhury, Qingyun Xie, John Niroula, Nitul S. Rajput, Kai Cheng, Han Wui Then, Tomás Palacios
202033
4
Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation
IEEE Electron Device Letters ·Mengyang Yuan, John Niroula, Qingyun Xie, Nitul S. Rajput, Kai Fu, Shisong Luo, Sagar Kumar Das, Abdullah Jubair Bin Iqbal, Bejoy Sikder, Mohamed Fadil Isamotu, Minsik Oh, Savannah R. Eisner, Debbie G. Senesky, Gary W. Hunter, Nadim Chowdhury, Yuji Zhao, Tomás Palacios
202327
5
GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform
IEEE Electron Device Letters ·Mengyang Yuan, Qingyun Xie, Kai Fu, Toiyob Hossain, John Niroula, James A. Greer, Nadim Chowdhury, Yuji Zhao, Tomás Palacios
202226
6
Highly Scaled GaN Complementary Technology on a Silicon Substrate
IEEE Transactions on Electron Devices ·Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder, James A. Greer, Nitul S. Rajput, Nadim Chowdhury, Tomás Palacios
202320
7
Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·Robin Jacobs-Gedrim, Sapan Agarwal, Kathrine E. Knisely, Jim E. Stevens, Michael S. Van Heukelom, David Russell Hughart, John Niroula, Conrad D. James, Matthew Marinella
201719
8
High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology
DSpace@MIT (Massachusetts Institute of Technology) ·Mengyang Yuan, Qingyun Xie, John Niroula, Mohamed Fadil Isamotu, Nitul S. Rajput, Nadim Chowdhury, Tomás Palacios
202216
9
Analog high resistance bilayer RRAM device for hardware acceleration of neuromorphic computation
Journal of Applied Physics ·Robin Jacobs-Gedrim, Sapan Agarwal, Ronald S. Goeke, C Christopher Smith, Patrick Sean Finnegan, John Niroula, David Russell Hughart, Paul G. Kotula, Conrad D. James, Matthew Marinella
201815
10
First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate
Ahmad Zubair, Joshua Perozek, John Niroula, Özgür Aktaş, V. A. Odnoblyudov, Tomás Palacios
202015
11
GaN Memory Operational at 300 °C
IEEE Electron Device Letters ·Mengyang Yuan, Qingyun Xie, John Niroula, Nadim Chowdhury, Tomás Palacios
202214
12
High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C
Applied Physics Letters ·John Niroula, Qingyun Xie, Nitul S. Rajput, Patrick K. Darmawi-Iskandar, Sheikh Ifatur Rahman, Shisong Luo, Rafid Hassan Palash, Bejoy Sikder, Mengyang Yuan, Pradyot Yadav, Gillian K. Micale, Nadim Chowdhury, Yuji Zhao, Siddharth Rajan, Tomás Palacios
202414
13
GaN 2.0: Power FinFETs, Complementary Gate Drivers and Low-Cost Vertical Devices
Tomás Palacios, Ahmad Zubair, John Niroula, Joshua Perozek, Nadim Chowdhury, Dongfei Pei, Mark Dipsey, Hal S. Emmer, Bin Lu
202111
14
Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform
2022 International Electron Devices Meeting (IEDM) ·Qingyun Xie, Mengyang Yuan, John Niroula, James A. Greer, Nitul S. Rajput, Nadim Chowdhury, Tomás Palacios
202210
15
Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C
DSpace@MIT (Massachusetts Institute of Technology) ·Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder, Shisong Luo, Kai Fu, Nitul S. Rajput, Ayan Biswas Pranta, Pradyot Yadav, Yuji Zhao, Nadim Chowdhury, Tomás Palacios
202310
16
Piecewise empirical model (PEM) of resistive memory for pulsed analog and neuromorphic applications
Journal of Computational Electronics ·John Niroula, Sapan Agarwal, Robin Jacobs-Gedrim, Richard Schiek, David Russell Hughart, Alex Hsia, Conrad D. James, Matthew Marinella
20174
17
Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C
John Niroula, Matthew Taylor, Qingyun Xie, Pradyot Yadav, Shisong Luo, Yuji Zhao, Tomás Palacios
20243
18
High breakdown electric field (>5 MV/cm) in UWBG AlGaN transistors
ArXiv.org ·Seungheon Shin, Hridibrata Pal, (unknown), John Niroula, Yinxuan Zhu, Chandan Joishi, Brianna Klein, Andrew Armstrong, Andrew A. Allerman, Tomás Palacios, Siddharth Rajan
20252
19
Degradation Analysis of InAlN/GaN Transistors Under Simulated Venus Surface Conditions
IEEE Transactions on Electron Devices ·Savannah R. Eisner, Zahra N. Heussen, Sergio Cordero, John Niroula, Jared Naphy, Mohamed Fadil Isamotu, Harshad Surdi, Mengyang Yuan, Qingyun Xie, R. J. Nemanich, Tomás Palacios, Mina Rais‐Zadeh, Gary W. Hunter, Debbie G. Senesky
20251
20
High Temperature AlGaN/GaN MISHEMT With W/AlON Gate Stack and I max>1 A/mm at 500 ∘C
IEEE Electron Device Letters ·John Niroula, Qingyun Xie, Elham Rafie Borujeny, Shisong Luo, Minsik Oh, (unknown), Yuji Zhao, Tomás Palacios
20251

About John Niroula

John Niroula is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Cellular and Molecular Neuroscience and Polymers and Plastics, having authored 26 papers that have together received 413 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (20 papers), Silicon Carbide Semiconductor Technologies (12 papers), Semiconductor materials and devices (10 papers), Ga2O3 and related materials (5 papers), Advanced Memory and Neural Computing (5 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Radio Frequency Integrated Circuit Design (4 papers) and Neuroscience and Neural Engineering (2 papers). The work is most often cited by research in Condensed Matter Physics (178 citations), Electrical and Electronic Engineering (365 citations), Electronic, Optical and Magnetic Materials (54 citations), Cellular and Molecular Neuroscience (48 citations) and Polymers and Plastics (31 citations). John Niroula has collaborated with scholars based in United States, Bangladesh and United Arab Emirates. Frequent co-authors include Tomás Palacios, Matthew Marinella, Robin Jacobs-Gedrim, Sapan Agarwal, Nadim Chowdhury, Qingyun Xie, Conrad D. James, Alexander H. Hsia, Steven J. Plimpton and Engin İpek. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Journal of Computational Electronics and IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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