J. Frandon

2.5k citations

78 papers · 2.2k · h-index 25

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 57
- GaN-based semiconductor devices and materials 54
Materials Chemistry 33
- ZnO doping and properties 16

Co-authors: F. Demangeot (42 shared papers)M. A. Renucci (34 shared papers)O. Briot (20 shared papers)J. Gleize (15 shared papers)R.L. Aulombard (7 shared papers)N. Grandjean (14 shared papers)C. Pinquier (13 shared papers)B. Daudin (7 shared papers)
Journals: Journal of Applied Physics (9 papers)Applied Physics Letters (8 papers)physica status solidi (b) (8 papers)Solid State Communications (7 papers)MRS Internet Journal of Nitride Semiconductor Research (4 papers)
Partner nations: France United Kingdom Portugal

In The Last Decade

J. Frandon

78 papers receiving 2.1k citations

Peers

Countries citing papers authored by J. Frandon

Since Specialization

Citations

This map shows the geographic impact of J. Frandon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Frandon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Frandon more than expected).

Fields of papers citing papers by J. Frandon

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Frandon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Frandon. The network helps show where J. Frandon may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Frandon, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Frandon Line = papers co-authored together J. Frandon links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 78 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Current status of AlInN layers lattice-matched to GaN for photonics and electronics Journal of Physics D Applied Physics ·R. Butté, (unknown), E. Feltin, M. Gonschorek, Sylvain Nicolay, G. Christmann, D. Simeonov, Antonino Castiglia, J. Dorsaz, H.‐J. Buehlmann, Stavros Christopoulos, G Baldassarri Höger von Hög, A. J. D. Grundy, Mauro Mosca, C. Pinquier, M. A. Py, F. Demangeot, J. Frandon, Pavlos G. Lagoudakis, Jeremy J. Baumberg, N. Grandjean	2007	300
2	Raman determination of phonon deformation potentials in α-GaN Solid State Communications ·F. Demangeot, J. Frandon, M. A. Renucci, O. Briot, Bernard Gil, R.L. Aulombard	1996	169
3	Interplay of electrons and phonons in heavily doped GaN epilayers Journal of Applied Physics ·F. Demangeot, J. Frandon, M. A. Renucci, C. Mény, O. Briot, R.L. Aulombard	1997	113
4	Anisotropy effects on polar optical phonons in wurtzite GaN/AlN superlattices Physical review. B, Condensed matter ·J. Gleize, M. A. Renucci, J. Frandon, F. Demangeot	1999	96
5	Phonon deformation potentials of wurtzite AlN Journal of Applied Physics ·J. Gleize, M. A. Renucci, J. Frandon, E. Bellet‐Amalric, B. Daudin	2003	87
6	Spin-lattice relaxation inp-type gallium arsenide single crystals Physical review. B, Condensed matter ·Kaerdin Zerrouati, F. Fabre, G. Bacquet, J. Bandet, J. Frandon, G. Lampel, D. Paget	1988	86
7	Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia Journal of Applied Physics ·N. Grandjean, J. Massies, P. Vennéguès, M. Leroux, F. Demangeot, M. A. Renucci, J. Frandon	1998	76
8	Electronic Excitations in Some Transition Metals and Their Oxides. Characteristic Energy Loss Measurements up to 50 eV physica status solidi (b) ·J. Frandon, B. Brousseau, F. Pradal	1980	74
9	Thermal stability of GaN investigated by Raman scattering Applied Physics Letters ·M. Kuball, F. Demangeot, J. Frandon, M. A. Renucci, J. Massies, N. Grandjean, R.L. Aulombard, O. Briot	1998	70
10	Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1−xAlxN solid solutions Applied Physics Letters ·F. Demangeot, J. Groenen, J. Frandon, M. A. Renucci, O. Briot, S. Clur, R.L. Aulombard	1998	69
11	Phonons in a strained hexagonal GaN–AlN superlattice Applied Physics Letters ·J. Gleize, F. Demangeot, J. Frandon, M. A. Renucci, F. Widmann, B. Daudin	1999	67
12	GaN nanoindentation: A micro-Raman spectroscopy study of local strain fields Journal of Applied Physics ·Pascal Puech, F. Demangeot, J. Frandon, C. Pinquier, Martin Kuball, Vladislav Domnich, Yury Gogotsi	2004	60
13	Phonon deformation potentials in hexagonal GaN Physical Review B ·F. Demangeot, J. Frandon, P. Baulés, F. Natali, F. Sèmond, J. Massies	2004	56
14	Spectra of Electronic Excitations in CaF₂, SrF₂, and BaF₂ in the 8 to 150 eV Range physica status solidi (b) ·J. Frandon, B. Lahaye, F. Pradal	1972	48
15	Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms Physical Review B ·F. Demangeot, C. Pinquier, J. Frandon, Miguel Gaio, O. Briot, B. Maleyre, S. Ruffenach, B. Gil	2005	45
16	Raman scattering study of wurtzite and rocksalt InN under high pressure Physical Review B ·C. Pinquier, F. Demangeot, J. Frandon, J. C. Chervin, A. Polian, B. Couzinet, P. Munsch, O. Briot, S. Ruffenach, Bernard Gil, B. Maleyre	2006	44
17	Angular dispersion of polar phonons in a hexagonal GaN–AlN superlattice Materials Science and Engineering B ·J. Gleize, J. Frandon, F. Demangeot, M. A. Renucci, M. Kuball, Joseph M. Hayes, F. Widmann, B. Daudin	2001	44
18	Raman study of the A1(LO) phonon in relaxed and pseudomorphic InGaN epilayers Applied Physics Letters ·M. R. Correia, S. Pereira, Eduarda Pereira, J. Frandon, E. Alves	2003	43
19	Determination of the electron excitation spectrum in scandium and yttrium by means of characteristic energy loss measurements physica status solidi (b) ·B. Brousseau‐Lahaye, C. Colliex, J. Frandon, M. Gasgnier, P. Trebbia	1975	37
20	Absorption and Raman scattering processes in InN films and dots Journal of Crystal Growth ·O. Briot, B. Maleyre, S. Ruffenach, B. Gil, C. Pinquier, F. Demangeot, J. Frandon	2004	36

About J. Frandon

J. Frandon is a scholar working on Condensed Matter Physics, Materials Chemistry, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 78 papers that have together received 2.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (54 papers), Acoustic Wave Resonator Technologies (27 papers), Semiconductor Quantum Structures and Devices (24 papers), Ga2O3 and related materials (21 papers), ZnO doping and properties (16 papers), Semiconductor materials and devices (14 papers), Metal and Thin Film Mechanics (9 papers) and Electron and X-Ray Spectroscopy Techniques (7 papers). The work is most often cited by research in Condensed Matter Physics (1.6k citations), Electronic, Optical and Magnetic Materials (648 citations), Atomic and Molecular Physics, and Optics (751 citations), Materials Chemistry (856 citations) and Mechanics of Materials (430 citations). J. Frandon has collaborated with scholars based in France, United Kingdom and Portugal. Frequent co-authors include F. Demangeot, M. A. Renucci, O. Briot, J. Gleize, R.L. Aulombard, N. Grandjean, C. Pinquier, B. Daudin, Bernard Gil and J. Massies. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, physica status solidi (b), Solid State Communications and MRS Internet Journal of Nitride Semiconductor Research.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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