J. Brini

3.2k citations

91 papers · 2.6k · 2 hit papers · h-index 22

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Silicon and Solar Cell Technologies
Condensed Matter Physics top 10%

Papers in

Electrical and Electronic Engineering 87
- Semiconductor materials and devices 61
- Advancements in Semiconductor Devices and Circuit Design 52
- Thin-Film Transistor Technologies 35
- Integrated Circuits and Semiconductor Failure Analysis 21
- Silicon and Solar Cell Technologies 17
- Silicon Carbide Semiconductor Technologies 7
Materials Chemistry 22
- Silicon Nanostructures and Photoluminescence 16

Co-authors: F. Balestra (16 shared papers)G. Ghibaudo (29 shared papers)C.A. Dimitriadis (45 shared papers)M. Benachir (6 shared papers)G. Kamarinos (42 shared papers)S. Cristoloveanu (4 shared papers)T. Elewa (2 shared papers)Filippos Farmakis (21 shared papers)
Journals: Solid-State Electronics (12 papers)Journal of Applied Physics (11 papers)Applied Physics Letters (7 papers)IEEE Transactions on Electron Devices (5 papers)IEEE Electron Device Letters (5 papers)
Partner nations: France Greece Bulgaria

In The Last Decade

J. Brini

87 papers receiving 2.4k citations

J. Brini's Hit Papers

align trajectories log scale

Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors 1991 · 618 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1991 physica status solidi (a)
1987 IEEE Electron Device Letters

Peers

Countries citing papers authored by J. Brini

Since Specialization

Citations

This map shows the geographic impact of J. Brini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Brini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Brini more than expected).

Fields of papers citing papers by J. Brini

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Brini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Brini. The network helps show where J. Brini may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Brini, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Brini Line = papers co-authored together J. Brini links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 91 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors physica status solidi (a) ·G. Ghibaudo, O. Roux, Ch. Nguyen-Duc, F. Balestra, J. Brini Hit paper breakdown →	1991	618
2	Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance IEEE Electron Device Letters ·F. Balestra, S. Cristoloveanu, M. Benachir, J. Brini, T. Elewa Hit paper breakdown →	1987	582
3	Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI MOSFETs IEEE Transactions on Electron Devices ·F. Balestra, M. Benachir, J. Brini, G. Ghibaudo	1990	97
4	On-current modeling of large-grain polycrystalline silicon thin-film transistors IEEE Transactions on Electron Devices ·Filippos Farmakis, J. Brini, G. Kamarinos, Constantinos T. Angelis, C.A. Dimitriadis, M Miyasaka	2001	73
5	Model for drain current RTS amplitude in small-area MOS transistors Solid-State Electronics ·O. Buisson, G. Ghibaudo, J. Brini	1992	66
6	On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs IEEE Electron Device Letters ·Pascal Le Masson, Jean‐Luc Autran, J. Brini	1999	64
7	Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements Journal of Applied Physics ·Constantinos T. Angelis, C.A. Dimitriadis, I. Samaras, J. Brini, G. Kamarinos, V.K. Gueorguiev, T. Ivanov	1997	63
8	Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors Journal of Applied Physics ·Constantinos T. Angelis, C.A. Dimitriadis, M Miyasaka, Filippos Farmakis, G. Kamarinos, J. Brini, J. Stoëmenos	1999	62
9	Impact of Scaling Down on Low Frequency Noise in Silicon MOS Transistors physica status solidi (a) ·G. Ghibaudo, O. Roux-dit-Buisson, J. Brini	1992	62
10	Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors IEEE Electron Device Letters ·Filippos Farmakis, J. Brini, G. Kamarinos, C.A. Dimitriadis	2001	61
11	Simple parameter extraction method for non-idealSchottkybarrier diodes Electronics Letters ·J.I. Lee, J. Brini, C.A. Dimitriadis	1998	39
12	Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering Journal of Applied Physics ·C.A. Dimitriadis, J. I. Lee, P. Patsalas, S. Logothetidis, D.H. Tassis, J. Brini, G. Kamarinos	1999	35
13	Contacts of titanium nitride to n- and p-type gallium nitride films Solid-State Electronics ·C.A. Dimitriadis, Th. Karakostas, S. Logothetidis, G. Kamarinos, J. Brini, G. Nouet	1999	34
14	Effect of grain boundaries on hot-carrier induced degradation in large grain polysilicon thin-film transistors Solid-State Electronics ·C.A. Dimitriadis, Mutsumi Kimura, M Miyasaka, Satoshi Inoue, Filippos Farmakis, J. Brini, G. Kamarinos	2000	33
15	Model of low frequency noise in polycrystalline silicon thin-film transistors IEEE Electron Device Letters ·C.A. Dimitriadis, G. Kamarinos, J. Brini	2001	29
16	Hot-carrier-induced degradation in short p-channel nonhydrogenated polysilicon thin-film transistors IEEE Transactions on Electron Devices ·N. A. Hastas, C.A. Dimitriadis, J. Brini, G. Kamarinos	2002	28
17	Deep depleted SOI MOSFETs with back potential control: A numerical simulation Solid-State Electronics ·F. Balestra, J. Brini, Paulo Gentil	1985	27
18	Flicker noise by random walk of electrons at the interface in nonideal Schottky diodes Solid-State Electronics ·J.I. Lee, J. Brini, A. Chovet, C.A. Dimitriadis	1999	26
19	Low-frequency noise sources in polysilicon emitter BJT's: influence of hot-electron-induced degradation and post-stress recovery IEEE Transactions on Electron Devices ·A. Mounib, F. Balestra, N. Mathieu, J. Brini, G. Ghibaudo, A. Chovet, A. Chantre, A. Nouailhat	1995	25
20	Origin of low-frequency noise in polycrystalline silicon thin-film transistors Journal of Applied Physics ·C.A. Dimitriadis, Filippos Farmakis, G. Kamarinos, J. Brini	2002	24

About J. Brini

J. Brini is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Condensed Matter Physics, having authored 91 papers that have together received 2.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (61 papers), Advancements in Semiconductor Devices and Circuit Design (52 papers), Thin-Film Transistor Technologies (35 papers), Integrated Circuits and Semiconductor Failure Analysis (21 papers), Silicon and Solar Cell Technologies (17 papers), Silicon Nanostructures and Photoluminescence (16 papers), Semiconductor materials and interfaces (11 papers) and Silicon Carbide Semiconductor Technologies (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.5k citations), Condensed Matter Physics (124 citations), Materials Chemistry (418 citations), Atomic and Molecular Physics, and Optics (254 citations) and Biomedical Engineering (290 citations). J. Brini has collaborated with scholars based in France, Greece and Bulgaria. Frequent co-authors include F. Balestra, G. Ghibaudo, C.A. Dimitriadis, M. Benachir, G. Kamarinos, S. Cristoloveanu, T. Elewa, Filippos Farmakis, Constantinos T. Angelis and V.K. Gueorguiev. Their work appears in journals such as Solid-State Electronics, Journal of Applied Physics, Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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