J. Brini

3.2k citations

90 papers · 2.6k · 2 hit papers · h-index 22

Impact in

Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Organic Electronics and Photovoltaics
- Radiation Effects in Electronics
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials

Papers in

Electrical and Electronic Engineering 76
- Semiconductor materials and devices 42
- Thin-Film Transistor Technologies 31
- Advancements in Semiconductor Devices and Circuit Design 17
- Organic Electronics and Photovoltaics 5
- Radiation Effects in Electronics 2
- Silicon Carbide Semiconductor Technologies 2
Atomic and Molecular Physics, and Optics 16
- Semiconductor materials and interfaces 16

Co-authors: Francis Balestra (16 shared papers)G. Ghibaudo (29 shared papers)O. Roux-dit-Buisson (10 shared papers)C.A. Dimitriadis (45 shared papers)M. Benachir (6 shared papers)G. Kamarinos (42 shared papers)C. Nguyen-Duc (1 shared paper)Sorin Cristoloveanu (4 shared papers)
Journals: Solid-State Electronics (12 papers)Journal of Applied Physics (11 papers)Applied Physics Letters (7 papers)IEEE Electron Device Letters (5 papers)IEEE Transactions on Electron Devices (5 papers)
Partner nations: Greece France Bulgaria

In The Last Decade

J. Brini

86 papers receiving 2.5k citations

J. Brini's Hit Papers

align trajectories log scale

Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors 1991 · 650 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

1991 physica status solidi (a)
1987 IEEE Electron Device Letters

Peers

Countries citing papers authored by J. Brini

Since Specialization

Citations

This map shows the geographic impact of J. Brini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Brini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Brini more than expected).

Fields of papers citing papers by J. Brini

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Brini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Brini. The network helps show where J. Brini may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Brini, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Brini Line = papers co-authored together J. Brini links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 90 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors physica status solidi (a) ·G. Ghibaudo, O. Roux-dit-Buisson, C. Nguyen-Duc, Francis Balestra, J. Brini Hit paper breakdown →	1991	650
2	Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance IEEE Electron Device Letters ·Francis Balestra, Sorin Cristoloveanu, M. Benachir, J. Brini, T. Elewa Hit paper breakdown →	1987	584
3	Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI MOSFETs IEEE Transactions on Electron Devices ·Francis Balestra, M. Benachir, J. Brini, G. Ghibaudo	1990	96
4	On-current modeling of large-grain polycrystalline silicon thin-film transistors IEEE Transactions on Electron Devices ·Filippos V. Farmakis, J. Brini, G. Kamarinos, Constantinos T. Angelis, C.A. Dimitriadis, M Miyasaka	2001	74
5	Model for drain current RTS amplitude in small-area MOS transistors Solid-State Electronics ·O. Roux-dit-Buisson, G. Ghibaudo, J. Brini	1992	65
6	Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements Journal of Applied Physics ·Constantinos T. Angelis, C.A. Dimitriadis, I. Samaras, J. Brini, G. Kamarinos, V.K. Gueorguiev, T. Ivanov	1997	65
7	Impact of Scaling Down on Low Frequency Noise in Silicon MOS Transistors physica status solidi (a) ·G. Ghibaudo, O. Roux-dit-Buisson, J. Brini	1992	64
8	On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs IEEE Electron Device Letters ·Jean‐Luc Autran, J. Brini +1 other	1999	64
9	Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors Journal of Applied Physics ·Constantinos T. Angelis, C.A. Dimitriadis, M Miyasaka, Filippos V. Farmakis, G. Kamarinos, J. Brini, John Stoemenos	1999	62
10	Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors IEEE Electron Device Letters ·Filippos V. Farmakis, J. Brini, G. Kamarinos, C.A. Dimitriadis	2001	60
11	Simple parameter extraction method for non-idealSchottkybarrier diodes Electronics Letters ·J.I. Lee, J. Brini, C.A. Dimitriadis	1998	39
12	Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering Journal of Applied Physics ·C.A. Dimitriadis, J. I. Lee, Panos A. Patsalas, S. Logothetidis, D.H. Tassis, J. Brini, G. Kamarinos	1999	35
13	Contacts of titanium nitride to n- and p-type gallium nitride films Solid-State Electronics ·C.A. Dimitriadis, Th. Karakostas, S. Logothetidis, G. Kamarinos, J. Brini, G. Nouet	1999	34
14	Effect of grain boundaries on hot-carrier induced degradation in large grain polysilicon thin-film transistors Solid-State Electronics ·C.A. Dimitriadis, Mutsumi Kimura, M Miyasaka, Satoshi Inoue, Filippos V. Farmakis, J. Brini, G. Kamarinos	2000	33
15	Model of low frequency noise in polycrystalline silicon thin-film transistors IEEE Electron Device Letters ·C.A. Dimitriadis, G. Kamarinos, J. Brini	2001	29
16	Hot-carrier-induced degradation in short p-channel nonhydrogenated polysilicon thin-film transistors IEEE Transactions on Electron Devices ·Nikolaos A. Hastas, C.A. Dimitriadis, J. Brini, G. Kamarinos	2002	28
17	Flicker noise by random walk of electrons at the interface in nonideal Schottky diodes Solid-State Electronics ·J.I. Lee, J. Brini, A. Chovet, C.A. Dimitriadis	1999	27
18	Deep depleted SOI MOSFETs with back potential control: A numerical simulation Solid-State Electronics ·Francis Balestra, J. Brini, Paulo Gentil	1985	26
19	Low-frequency noise sources in polysilicon emitter BJT's: influence of hot-electron-induced degradation and post-stress recovery IEEE Transactions on Electron Devices ·A. Mounib, Francis Balestra, N. Mathieu, J. Brini, G. Ghibaudo, A. Chovet, A. Chantre, A. Nouailhat	1995	26
20	Origin of low-frequency noise in polycrystalline silicon thin-film transistors Journal of Applied Physics ·C.A. Dimitriadis, Filippos V. Farmakis, G. Kamarinos, J. Brini	2002	24

About J. Brini

J. Brini is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Computer Networks and Communications and Communication, having authored 90 papers that have together received 2.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (42 papers), Thin-Film Transistor Technologies (31 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), Semiconductor materials and interfaces (16 papers), Organic Electronics and Photovoltaics (5 papers), Radiation Effects in Electronics (2 papers), GaN-based semiconductor devices and materials (2 papers) and Silicon Carbide Semiconductor Technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.3k citations), Condensed Matter Physics (106 citations), Bioengineering (15 citations), Atomic and Molecular Physics, and Optics (149 citations) and Materials Chemistry (132 citations). J. Brini has collaborated with scholars based in Greece, France and Bulgaria. Frequent co-authors include Francis Balestra, G. Ghibaudo, O. Roux-dit-Buisson, C.A. Dimitriadis, M. Benachir, G. Kamarinos, C. Nguyen-Duc, Sorin Cristoloveanu, T. Elewa and Filippos V. Farmakis. Their work appears in journals such as Solid-State Electronics, Journal of Applied Physics, Applied Physics Letters, IEEE Electron Device Letters and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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