G. Traversi

2.1k citations

132 papers · 878 · h-index 17

Impact in

Nuclear and High Energy Physics top 5%
- Particle Detector Development and Performance
Radiation top 5%
- Radiation Detection and Scintillator Technologies

Papers in

Electrical and Electronic Engineering 123
- CCD and CMOS Imaging Sensors 59
- Advancements in Semiconductor Devices and Circuit Design 44
- Radiation Effects in Electronics 41
- Semiconductor materials and devices 28
- Integrated Circuits and Semiconductor Failure Analysis 9
Nuclear and High Energy Physics 76
- Particle Detector Development and Performance 76

Co-authors: V. Re (99 shared papers)L. Ratti (105 shared papers)M. Manghisoni (98 shared papers)V. Speziali (27 shared papers)L. Gaioni (66 shared papers)F. Morsani (13 shared papers)A. Candelori (3 shared papers)S. Bettarini (11 shared papers)
Journals: IEEE Transactions on Nuclear Science (41 papers)Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (23 papers)Journal of Instrumentation (10 papers)Electronics (3 papers)IEEE Sensors Journal (1 paper)
Partner nations: Italy Switzerland United States

In The Last Decade

G. Traversi

118 papers receiving 840 citations

Peers

Countries citing papers authored by G. Traversi

Since Specialization

Citations

This map shows the geographic impact of G. Traversi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Traversi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Traversi more than expected).

Fields of papers citing papers by G. Traversi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Traversi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Traversi. The network helps show where G. Traversi may publish in the future.

Co-authors

The 25 scholars most cited alongside G. Traversi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. Traversi Line = papers co-authored together G. Traversi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 132 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Comparison of ionizing radiation effects in 0.18 and 0.25 /spl mu/m CMOS technologies for analog applications IEEE Transactions on Nuclear Science ·M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, A. Candelori	2003	39
2	Monolithic pixel detectors in a 0.13μm CMOS technology with sensor level continuous time charge amplification and shaping Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·L. Ratti, M. Manghisoni, V. Re, V. Speziali, G. Traversi, S. Bettarini, G. Calderini, R. Cenci, M. A. Giorgi, F. Forti, F. Morsani, G. Rizzo	2006	38
3	Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology IEEE Transactions on Nuclear Science ·V. Re, M. Manghisoni, L. Ratti, V. Speziali, G. Traversi	2006	35
4	Impact of Lateral Isolation Oxides on Radiation-Induced Noise Degradation in CMOS Technologies in the 100-nm Regime IEEE Transactions on Nuclear Science ·V. Re, M. Manghisoni, L. Ratti, Valeria Speziali, G. Traversi	2007	31
5	Development of a Wearable In-Ear PPG System for Continuous Monitoring IEEE Sensors Journal ·Andrea Pedrana, D. Comotti, V. Re, G. Traversi	2020	26
6	Comprehensive Study of Total Ionizing Dose Damage Mechanisms and Their Effects on Noise Sources in a 90 nm CMOS Technology IEEE Transactions on Nuclear Science ·V. Re, L. Gaioni, M. Manghisoni, L. Ratti, G. Traversi	2008	25
7	A novel monolithic active pixel detector in 0.13μm triple well CMOS technology with pixel level analog processing Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·G. Rizzo, S. Bettarini, G. Calderini, R. Cenci, F. Forti, F. M. Giorgi, F. Morsani, L. Ratti, V. Speziali, M. Manghisoni, V. Re, G. Traversi, L. Bosisio	2006	24
8	Classification of Essential Tremor and Parkinson’s Tremor Based on a Low-Power Wearable Device Electronics ·Patrick Locatelli, Dario Alimonti, G. Traversi, V. Re	2020	23
9	Design Optimization of Charge Preamplifiers With CMOS Processes in the 100 nm Gate Length Regime IEEE Transactions on Nuclear Science ·L. Ratti, M. Manghisoni, V. Re, G. Traversi	2009	23
10	Resolution Limits in 130 nm and 90 nm CMOS Technologies for Analog Front-End Applications IEEE Transactions on Nuclear Science ·M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi	2007	23
11	Noise Characterization of 130 nm and 90 nm CMOS Technologies for Analog Front-end Electronics 2006 IEEE Nuclear Science Symposium Conference Record ·M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi	2006	23
12	Noise Performance of 0.13$mu$m CMOS Technologies for Detector Front-End Applications IEEE Transactions on Nuclear Science ·M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi	2006	22
13	CMOS MAPS with pixel level sparsification and time stamping capabilities for applications at the ILC Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·G. Traversi, M. Manghisoni, L. Ratti, V. Re, Valeria Speziali	2007	19
14	Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions IEEE Transactions on Nuclear Science ·L. Ratti, L. Gaioni, M. Manghisoni, G. Traversi, D. Pantano	2008	18
15	Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation IEEE Transactions on Nuclear Science ·V. Re, L. Gaioni, M. Manghisoni, L. Ratti, G. Traversi	2010	17
16	Introducing 65 nm CMOS technology in low-noise read-out of semiconductor detectors Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·M. Manghisoni, L. Gaioni, L. Ratti, V. Re, G. Traversi	2010	17
17	Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, G. Fallica	2003	16
18	A 65 nm Rad-Hard Bandgap Voltage Reference for LHC Environment IEEE Transactions on Nuclear Science ·T. Vergine, Marcello De Matteis, Stefano Michelis, G. Traversi, F. De Canio, A. Basçhirotto	2016	16
19	Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries IEEE Transactions on Nuclear Science ·V. Re, M. Manghisoni, L. Ratti, V. Speziali, G. Traversi	2005	16
20	Assessment of a Low-Power 65 nm CMOS Technology for Analog Front-End Design IEEE Transactions on Nuclear Science ·M. Manghisoni, L. Gaioni, L. Ratti, V. Re, G. Traversi	2014	15

About G. Traversi

G. Traversi is a scholar working on Electrical and Electronic Engineering, Nuclear and High Energy Physics, Biomedical Engineering, Radiation and Hardware and Architecture, having authored 132 papers that have together received 878 indexed citations. Recurring topics across this work include Particle Detector Development and Performance (76 papers), CCD and CMOS Imaging Sensors (59 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers), Radiation Effects in Electronics (41 papers), Semiconductor materials and devices (28 papers), Analog and Mixed-Signal Circuit Design (24 papers), Radiation Detection and Scintillator Technologies (23 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). The work is most often cited by research in Nuclear and High Energy Physics (382 citations), Radiation (158 citations), Electrical and Electronic Engineering (774 citations), Hardware and Architecture (42 citations) and Biomedical Engineering (190 citations). G. Traversi has collaborated with scholars based in Italy, Switzerland and United States. Frequent co-authors include V. Re, L. Ratti, M. Manghisoni, V. Speziali, L. Gaioni, F. Morsani, A. Candelori, S. Bettarini, G. Rizzo and Dario Alimonti. Their work appears in journals such as IEEE Transactions on Nuclear Science, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, Journal of Instrumentation, Electronics and IEEE Sensors Journal.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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