G. Dingemans

3.3k citations

49 papers · 2.9k · 1 hit paper · h-index 23

Impact in

Electrical and Electronic Engineering top 1%
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
Materials Chemistry top 5%
- Silicon Nanostructures and Photoluminescence
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 49
- Silicon and Solar Cell Technologies 35
- Semiconductor materials and devices 29
- Thin-Film Transistor Technologies 19
- Integrated Circuits and Semiconductor Failure Analysis 8
Materials Chemistry 26
- Silicon Nanostructures and Photoluminescence 23
- Catalytic Processes in Materials Science 3

Co-authors: W. M. M. Kessels (37 shared papers)M. C. M. van de Sanden (28 shared papers)N. M. Terlinden (6 shared papers)W. Beyer (3 shared papers)P. Engelhart (6 shared papers)R. Seguin (5 shared papers)W. Keuning (6 shared papers)Dieter Pierreux (3 shared papers)
Journals: Applied Physics Letters (5 papers)Journal of Applied Physics (5 papers)Journal of The Electrochemical Society (2 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2 papers)Solar Energy Materials and Solar Cells (2 papers)
Partner nations: Netherlands Germany Belgium

In The Last Decade

G. Dingemans

49 papers receiving 2.8k citations

G. Dingemans's Hit Papers

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Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells 2012 · 665 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2012 Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Peers

Countries citing papers authored by G. Dingemans

Since Specialization

Citations

This map shows the geographic impact of G. Dingemans's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Dingemans with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Dingemans more than expected).

Fields of papers citing papers by G. Dingemans

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Dingemans. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Dingemans. The network helps show where G. Dingemans may publish in the future.

Co-authors

The 25 scholars most cited alongside G. Dingemans, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. Dingemans Line = papers co-authored together G. Dingemans links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·G. Dingemans, W. M. M. Kessels Hit paper breakdown →	2012	665
2	Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD Electrochemical and Solid-State Letters ·G. Dingemans, M. C. M. van de Sanden, W. M. M. Kessels	2010	191
3	Silicon surface passivation by ultrathin Al₂O₃ films synthesized by thermal and plasma atomic layer deposition physica status solidi (RRL) - Rapid Research Letters ·G. Dingemans, R. Seguin, P. Engelhart, M. C. M. van de Sanden, W. M. M. Kessels	2009	175
4	Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks Applied Physics Letters ·G. Dingemans, W. Beyer, M. C. M. van de Sanden, W. M. M. Kessels	2010	159
5	Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films Journal of The Electrochemical Society ·Stephen E. Potts, W. Keuning, E. Langereis, G. Dingemans, M. C. M. van de Sanden, W. M. M. Kessels	2010	155
6	Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3] Electrochemical and Solid-State Letters ·G. Dingemans, N. M. Terlinden, Dieter Pierreux, Harald B. Profijt, M. C. M. van de Sanden, W. M. M. Kessels	2010	151
7	Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition Journal of Applied Physics ·G. Dingemans, N. M. Terlinden, Marcel A. Verheijen, M. C. M. van de Sanden, W. M. M. Kessels	2011	145
8	Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface Journal of Applied Physics ·G. Dingemans, F. Einsele, W. Beyer, M. C. M. van de Sanden, W. M. M. Kessels	2012	139
9	Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon Journal of Applied Physics ·G. Dingemans, P. Engelhart, R. Seguin, F. Einsele, Bram Hoex, M. C. M. van de Sanden, W. M. M. Kessels	2009	134
10	Plasma-Assisted ALD for the Conformal Deposition of SiO₂: Process, Material and Electronic Properties Journal of The Electrochemical Society ·G. Dingemans, Cristian A. A. van Helvoirt, Dieter Pierreux, W. Keuning, W. M. M. Kessels	2012	127
11	Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3 Applied Physics Letters ·N. M. Terlinden, G. Dingemans, M. C. M. van de Sanden, W. M. M. Kessels	2010	120
12	Excellent Si surface passivation by low temperature SiO₂ using an ultrathin Al₂O₃ capping film physica status solidi (RRL) - Rapid Research Letters ·G. Dingemans, M. C. M. van de Sanden, W. M. M. Kessels	2010	82
13	Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Stephen E. Potts, G. Dingemans, Christophe Lachaud, W. M. M. Kessels	2012	71
14	Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks Applied Physics Letters ·G. Dingemans, M. M. Mandoc, Stefan Bordihn, M. C. M. van de Sanden, W. M. M. Kessels	2011	60
15	Composition and bonding structure of plasma‐assisted ALD Al₂O₃ films Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·V. Verlaan, L. R. J. G. van den Elzen, G. Dingemans, M. C. M. van de Sanden, W. M. M. Kessels	2010	59
16	Influence of the SiO2 interlayer thickness on the density and polarity of charges in Si/SiO2/Al2O3 stacks as studied by optical second-harmonic generation Journal of Applied Physics ·N. M. Terlinden, G. Dingemans, Vincent Vandalon, R. H. E. C. Bosch, W. M. M. Kessels	2014	55
17	Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO₂ ECS Transactions ·G. Dingemans, Cristian van Helvoirt, M. C. M. van de Sanden, W. M. M. Kessels	2011	52
18	High-Efficiency n-Type Silicon Solar Cells with Front Side Boron Emitter Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Jan Benick, Bram Hoex, G. Dingemans, Wmm Erwin Kessels, Α. Richter, Martin Hermle, SW Glunz	2009	44
19	The atomic hydrogen flux to silicon growth flux ratio during microcrystalline silicon solar cell deposition Applied Physics Letters ·G. Dingemans, M.N. van den Donker, D. Hrunski, A. Gordijn, W. M. M. Kessels, M. C. M. van de Sanden	2008	37
20	High surface passivation quality and thermal stability of ALD Al2O3 on wet chemical grown ultra-thin SiO2 on silicon Energy Procedia ·Stefan Bordihn, P. Engelhart, Verena Mertens, Gerd Kesser, Dennis Köhn, G. Dingemans, M. M. Mandoc, J. W. Müller, W. M. M. Kessels	2011	34

About G. Dingemans

G. Dingemans is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Ceramics and Composites, having authored 49 papers that have together received 2.9k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (35 papers), Semiconductor materials and devices (29 papers), Silicon Nanostructures and Photoluminescence (23 papers), Thin-Film Transistor Technologies (19 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers), Semiconductor materials and interfaces (8 papers), Catalytic Processes in Materials Science (3 papers) and Copper Interconnects and Reliability (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.7k citations), Materials Chemistry (1.3k citations), Atomic and Molecular Physics, and Optics (749 citations), Electronic, Optical and Magnetic Materials (138 citations) and Renewable Energy, Sustainability and the Environment (107 citations). G. Dingemans has collaborated with scholars based in Netherlands, Germany and Belgium. Frequent co-authors include W. M. M. Kessels, M. C. M. van de Sanden, N. M. Terlinden, W. Beyer, P. Engelhart, R. Seguin, W. Keuning, Dieter Pierreux, F. Einsele and Stephen E. Potts. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of The Electrochemical Society, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and Solar Energy Materials and Solar Cells.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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