E. G. Bylander
Impact in
-
- Ga2O3 and related materials
- Nuclear Energy and Engineering top 10%
Papers in
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- Advanced Semiconductor Detectors and Materials 4
- Chalcogenide Semiconductor Thin Films 4
- Semiconductor materials and devices 3
- Thin-Film Transistor Technologies 2
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- Semiconductor materials and interfaces 2
- Optical properties and cooling technologies in crystalline materials 1
- Co-authors
- M. Hass (1 shared paper)Charles W. Myles (2 shared papers)Paul F. Williams (1 shared paper)Richard Alexander Chapman (1 shared paper)Jack R. Dixon (1 shared paper)Hubert Riedl (1 shared paper)Richard B. Schoolar (1 shared paper)DONALD F. WEIRAUCH (1 shared paper)
- Journals
- Journal of Applied Physics (5 papers)Applied Physics Letters (1 paper)Journal of The Electrochemical Society (1 paper)Journal of Electronic Materials (1 paper)Proceedings of the IEEE (1 paper)
- Partner nations
- United StatesNetherlands
In The Last Decade
E. G. Bylander
13 papers receiving 576 citations
E. G. Bylander's Hit Papers
Peers
Comparison fields: 5 of 37
- Electronic, Optical and Magnetic Materials 234
- Nuclear Energy and Engineering 6
- Materials Chemistry 525
- Electrical and Electronic Engineering 410
- Acoustics and Ultrasonics 3
Countries citing papers authored by E. G. Bylander
This map shows the geographic impact of E. G. Bylander's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. G. Bylander with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. G. Bylander more than expected).
Fields of papers citing papers by E. G. Bylander
This network shows the impact of papers produced by E. G. Bylander. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. G. Bylander. The network helps show where E. G. Bylander may publish in the future.
Co-authors
The 15 scholars most cited alongside E. G. Bylander, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | Surface effects on the low-energy cathodoluminescence of zinc oxide Hit paper breakdown → | 1978 | 430 |
| 2 | 1962 | 43 | |
| 3 | 1966 | 37 | |
| 4 | 1985 | 29 | |
| 5 | 1965 | 22 | |
| 6 | 1966 | 22 | |
| 7 | 1986 | 15 | |
| 8 | 1963 | 8 | |
| 9 | 1988 | 7 | |
| 10 | 1990 | 7 | |
| 11 | 1965 | 5 | |
| 12 | Materials for Semiconductor Functions | 1971 | 5 |
| 13 | 1960 | 3 | |
| 14 | 1964 | 2 |
About E. G. Bylander
E. G. Bylander is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Radiation and Biomedical Engineering, having authored 14 papers that have together received 635 indexed citations. Recurring topics across this work include Advanced Semiconductor Detectors and Materials (4 papers), Chalcogenide Semiconductor Thin Films (4 papers), Semiconductor materials and devices (3 papers), Machine Learning in Materials Science (2 papers), Thin-Film Transistor Technologies (2 papers), Semiconductor materials and interfaces (2 papers), Quantum Dots Synthesis And Properties (1 paper) and Optical properties and cooling technologies in crystalline materials (1 paper). The work is most often cited by research in Electronic, Optical and Magnetic Materials (234 citations), Nuclear Energy and Engineering (6 citations), Materials Chemistry (525 citations), Electrical and Electronic Engineering (410 citations) and Acoustics and Ultrasonics (3 citations). E. G. Bylander has collaborated with scholars based in United States and Netherlands. Frequent co-authors include M. Hass, Charles W. Myles, Paul F. Williams, Richard Alexander Chapman, Jack R. Dixon, Hubert Riedl, Richard B. Schoolar, DONALD F. WEIRAUCH, Chang-Feng Wan and Carlos A. Nieto de Castro. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Journal of The Electrochemical Society, Journal of Electronic Materials and Proceedings of the IEEE.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.