E. G. Bylander

711 citations
14 papers · 604 · 1 hit paper · h-index 8

Impact in

Papers in

    • Advanced Semiconductor Detectors and Materials 4
    • Chalcogenide Semiconductor Thin Films 4
    • Semiconductor materials and devices 3
    • Thin-Film Transistor Technologies 2
    • Gas Sensing Nanomaterials and Sensors 1
    • Machine Learning in Materials Science 2

E. G. Bylander

13 papers receiving 553 citations

E. G. Bylander's Hit Papers

Surface effects on the low-energy cathodoluminescence of zinc oxide 1978 · 421 citations
4210+16+32Years since publication100200300400

Peers

E. G. Bylander
Comparison fields: 5 of 37
  • Nuclear Energy and Engineering 6
  • Electronic, Optical and Magnetic Materials 233
  • Materials Chemistry 504
  • Electrical and Electronic Engineering 390
  • Acoustics and Ultrasonics 3
Replace W. S. Baer with:
W. S. Baer
T. Seshagiri Rao India
Masumi Ito Japan
Sz. Fujita Japan
I. Bunget Romania
Goro Shimaoka Japan
A.G. Chakhovskoi United States
V. Kubilius Lithuania
St. Rübenacke Germany
Pran Kishan India
E. G. Bylander relative to W. S. Baer W. S. Baer's profile →
Citations per field
00.5×
W. S. Baer · 1×
Citations per year

Countries citing papers authored by E. G. Bylander

Since Specialization
Citations

This map shows the geographic impact of E. G. Bylander's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. G. Bylander with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. G. Bylander more than expected).

Fields of papers citing papers by E. G. Bylander

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. G. Bylander. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. G. Bylander. The network helps show where E. G. Bylander may publish in the future.

Co-authors

The 15 scholars most cited alongside E. G. Bylander, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. G. Bylander Line = papers co-authored together E. G. Bylander links everyone, so they are left out of the graph.

All Works

14 of 14 papers shown
#Work
1
Surface effects on the low-energy cathodoluminescence of zinc oxide
Hit paper breakdown →
1978421
2 196236
3 196631
4 198528
5 196522
6 196618
7 198614
8 19907
9 19637
10 19887
11
Materials for Semiconductor Functions
19715
12 19654
13 19642
14 19602

About E. G. Bylander

E. G. Bylander is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Radiation, having authored 14 papers that have together received 604 indexed citations. Recurring topics across this work include Advanced Semiconductor Detectors and Materials (4 papers), Chalcogenide Semiconductor Thin Films (4 papers), Semiconductor materials and devices (3 papers), Machine Learning in Materials Science (2 papers), Thin-Film Transistor Technologies (2 papers), Semiconductor materials and interfaces (2 papers), Semiconductor Quantum Structures and Devices (1 paper) and Gas Sensing Nanomaterials and Sensors (1 paper). The work is most often cited by research in Nuclear Energy and Engineering (6 citations), Electronic, Optical and Magnetic Materials (233 citations), Materials Chemistry (504 citations), Electrical and Electronic Engineering (390 citations) and Acoustics and Ultrasonics (3 citations). E. G. Bylander has collaborated with scholars based in United States and Netherlands. Frequent co-authors include M. Hass, Charles W. Myles, P. F. Williams, R. A. Chapman, Jack R. Dixon, Hubert Riedl, R. B. Schoolar, R. Korenstein, Chang-Feng Wan and D. F. Weirauch. Their work appears in journals such as Journal of Applied Physics, Journal of Electronic Materials, Applied Physics Letters, Proceedings of the IEEE and Solid State Communications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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