Daniel L. Rode
Impact in
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- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Papers in
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- Semiconductor materials and interfaces 28
- Semiconductor Quantum Structures and Devices 9
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- Semiconductor Lasers and Optical Devices 10
- Advanced Semiconductor Detectors and Materials 6
- Semiconductor materials and devices 6
- Photonic and Optical Devices 6
- Advancements in Semiconductor Devices and Circuit Design 5
- Co-authors
- Stephen E. Knight (1 shared paper)D. Kurt Gaskill (2 shared papers)Ronald D. Esman (3 shared papers)Robert R. Krchnavek (7 shared papers)Wilfried R. Wagner (2 shared papers)James V. DiLorenzo (2 shared papers)John D. Wiley (1 shared paper)Norman E. Schumaker (1 shared paper)
- Journals
- Journal of Applied Physics (17 papers)Journal of Crystal Growth (4 papers)Applied Physics Letters (4 papers)Solid-State Electronics (3 papers)physica status solidi (b) (3 papers)
- Partner nations
- United StatesGermanySouth Korea
In The Last Decade
Daniel L. Rode
55 papers receiving 1.9k citations
Peers
Comparison fields: 5 of 55
- Atomic and Molecular Physics, and Optics 1.1k
- Condensed Matter Physics 227
- Electrical and Electronic Engineering 1k
- Materials Chemistry 551
- General Materials Science 9
Countries citing papers authored by Daniel L. Rode
This map shows the geographic impact of Daniel L. Rode's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel L. Rode with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel L. Rode more than expected).
Fields of papers citing papers by Daniel L. Rode
This network shows the impact of papers produced by Daniel L. Rode. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel L. Rode. The network helps show where Daniel L. Rode may publish in the future.
Co-authors
The 25 scholars most cited alongside Daniel L. Rode, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 61 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | 1970 | 321 | |
| 2 | 1971 | 252 | |
| 3 | 1971 | 226 | |
| 4 | 1970 | 164 | |
| 5 | 1975 | 142 | |
| 6 | 1973 | 118 | |
| 7 | 1972 | 84 | |
| 8 | 1995 | 75 | |
| 9 | 2001 | 60 | |
| 10 | 1973 | 55 | |
| 11 | 1974 | 51 | |
| 12 | 1985 | 44 | |
| 13 | 1974 | 42 | |
| 14 | 1975 | 37 | |
| 15 | 1977 | 33 | |
| 16 | 1974 | 28 | |
| 17 | 2011 | 26 | |
| 18 | 1978 | 25 | |
| 19 | 2007 | 25 | |
| 20 | 1994 | 22 |
About Daniel L. Rode
Daniel L. Rode is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics and Ceramics and Composites, having authored 61 papers that have together received 2.1k indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (28 papers), Semiconductor Lasers and Optical Devices (10 papers), Semiconductor Quantum Structures and Devices (9 papers), Solidification and crystal growth phenomena (8 papers), Advanced Semiconductor Detectors and Materials (6 papers), Semiconductor materials and devices (6 papers), Photonic and Optical Devices (6 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.1k citations), Condensed Matter Physics (227 citations), Electrical and Electronic Engineering (1k citations), Materials Chemistry (551 citations) and General Materials Science (9 citations). Daniel L. Rode has collaborated with scholars based in United States, Germany and South Korea. Frequent co-authors include Stephen E. Knight, D. Kurt Gaskill, Ronald D. Esman, Robert R. Krchnavek, Wilfried R. Wagner, James V. DiLorenzo, John D. Wiley, Norman E. Schumaker, Martin A. Afromowitz and Bernhard Schwartz. Their work appears in journals such as Journal of Applied Physics, Journal of Crystal Growth, Applied Physics Letters, Solid-State Electronics and physica status solidi (b).
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.