D. Yost

1.1k citations

40 papers · 736 · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- 3D IC and TSV technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electronic Packaging and Soldering Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- CCD and CMOS Imaging Sensors
- Thin-Film Transistor Technologies
Instrumentation top 10%

Papers in

Electrical and Electronic Engineering 35
- Semiconductor materials and devices 15
- 3D IC and TSV technologies 12
- Advancements in Semiconductor Devices and Circuit Design 11
- Advancements in Photolithography Techniques 7
- Thin-Film Transistor Technologies 7
- Integrated Circuits and Semiconductor Failure Analysis 6
- Photonic and Optical Devices 5
Atomic and Molecular Physics, and Optics 11
- Quantum and electron transport phenomena 7

Co-authors: C.L. Keast (24 shared papers)P.W. Wyatt (18 shared papers)J.M. Knecht (19 shared papers)C.K. Chen (16 shared papers)J.A. Burns (13 shared papers)Vyshnavi Suntharalingam (12 shared papers)K. Warner (8 shared papers)Brian F. Aull (3 shared papers)
Journals: IEEE Electron Device Letters (4 papers)IEEE Microwave and Wireless Components Letters (2 papers)npj Quantum Information (2 papers)IEEE Circuits and Devices Magazine (1 paper)Applied Physics Letters (1 paper)
Partner nations: United States France

In The Last Decade

D. Yost

39 papers receiving 679 citations

Peers

Countries citing papers authored by D. Yost

Since Specialization

Citations

This map shows the geographic impact of D. Yost's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Yost with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Yost more than expected).

Fields of papers citing papers by D. Yost

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Yost. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Yost. The network helps show where D. Yost may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Yost, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Yost Line = papers co-authored together D. Yost links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 40 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	A wafer-scale 3-D circuit integration technology IEEE Transactions on Electron Devices ·J.A. Burns, Brian F. Aull, C.K. Chen, Chang‐Lee Chen, C.L. Keast, J.M. Knecht, Vyshnavi Suntharalingam, K. Warner, P.W. Wyatt, D. Yost	2006	192
2	Megapixel CMOS image sensor fabricated in three-dimensional integrated circuit technology Vyshnavi Suntharalingam, R. Berger, J.A. Burns, C.K. Chen, C.L. Keast, J.M. Knecht, Renee Lambert, K. Newcomb, Daniel M. O’Mara, D.D. Rathman, David C. Shaver, A.M. Soares, Charles N. Stevenson, Brian Tyrrell, K. Warner, B.D. Wheeler, D. Yost, Douglas Young	2005	88
3	High-Speed Schottky-Barrier pMOSFET With<tex>$f_T = 280 hbox GHz$</tex> IEEE Electron Device Letters ·M. Fritze, C.L. Chen, S.D. Calawa, D. Yost, Bruce Wheeler, P.W. Wyatt, C.L. Keast, John P. Snyder, Jeffrey Larson	2004	79
4	Laser Radar Imager Based on 3D Integration of Geiger-Mode Avalanche Photodiodes with Two SOI Timing Circuit Layers Brian F. Aull, J.A. Burns, C. Chen, Bradley Felton, Hugo H. Hanson, C.L. Keast, J.M. Knecht, Andrew H. Loomis, Matthew J. Renzi, Anna Elis Paz Soares, Vyshnavi Suntharalingam, K. Warner, Deanna L. Wolfson, D. Yost, Douglas Young	2006	41
5	Solid-State Qubits: 3D Integration and Packaging IEEE Microwave Magazine ·Danna Rosenberg, Steven Weber, David Conway, D. Yost, Justin Mallek, Gregory Calusine, Rabindra Nath Das, David Kim, Mollie E. Schwartz, Wayne Woods, Jonilyn Yoder, William D. Oliver	2020	36
6	Cryogenic Qubit Integration for Quantum Computing Rabindra Das, William D. Oliver, Jonilyn Yoder, D. Rosenberg, David Kim, D. Yost, Justin Mallek, David Hover, Vlad Bolkhovsky, Andrew J. Kerman	2018	32
7	3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator npj Quantum Information ·Nathan Holman, D. Rosenberg, D. Yost, Jonilyn Yoder, R. Das, William D. Oliver, R. McDermott, M. A. Eriksson	2021	30
8	High-performance fully-depleted SOI RF CMOS IEEE Electron Device Letters ·C.L. Chen, S. J. Spector, R. Blumgold, R. Neidhard, W. T. Beard, D. Yost, J.M. Knecht, C.K. Chen, M. Fritze, Charles Cerny, Joshua Cook, P.W. Wyatt, C.L. Keast	2002	23
9	Low polarization dependent diffraction grating for wavelength demultimlexing Optics Express ·E. Popov, J. Hoose, B. Frankel, C.L. Keast, M. Fritze, T. Y. Fan, D. Yost, S. Rabe	2004	20
10	InAlN/GaN-on-Si HEMT with 4.5 W/mm in a 200-mm CMOS-Compatible MMIC Process for 3D Integration Shireen Warnock, Chang‐Lee Chen, Jeffrey Knechtl, R. J. Molnar, D. Yost, Matthew Cook, Corey Stull, Ryan Johnson, C. Galbraith, Jeffrey W. Daulton, Weilin Hu, Gianni Pinelli, Joshua Perozek, Tomás Palacios, Beijia Zhang, Jeffrey S. Herd, C.L. Keast	2020	17
11	Longitudinal coupling between a Si/Si1−xGex double quantum dot and an off-chip TiN resonator Physical Review Applied ·J. Corrigan, Benjamin Harpt, Nathan Holman, Rusko Ruskov, Piotr Marciniec, D. Rosenberg, D. Yost, Rabindra Das, William D. Oliver, R. McDermott, Charles Tahan, Mark Friesen, M. A. Eriksson	2023	15
12	High-frequency characterization of sub-0.25-/spl mu/m fully depleted silicon-on-insulator MOSFETs IEEE Electron Device Letters ·C.L. Chen, R.H. Mathews, J.A. Burns, P.W. Wyatt, D. Yost, C.K. Chen, M. Fritze, J.M. Knecht, Vyshnavi Suntharalingam, Anna Elis Paz Soares, C.L. Keast	2000	12
13	Dry etching of amorphous-Si gates for deep sub-100 nm silicon-on-insulator complementary metal–oxide semiconductor Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·D. Yost, T. Forte, M. Fritze, David K. Astolfi, Vyshnavi Suntharalingam, C. K. Chen, Susan G. Cann	2002	11
14	Sub-100 nm silicon on insulator complimentary metal–oxide semiconductor transistors by deep ultraviolet optical lithography Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·M. Fritze, J.A. Burns, P.W. Wyatt, C. K. Chen, Pascale Gouker, C. L. Chen, C.L. Keast, David K. Astolfi, D. Yost, Douglas M. Preble, Andrew V. Curtis, Paul H. Davis, Susan G. Cann, S. Deneault, H. Y. Liu	2000	10
15	Gratings of regular arrays and trim exposures for ultralarge scale integrated circuit phase-shift lithography Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·M. Fritze, Brian Tyrrell, David K. Astolfi, D. Yost, Paul H. Davis, Bruce Wheeler, Renee D. Mallen, J. Jarmolowicz, Susan G. Cann, David Y. Chan, Peter D. Rhyins, C. Carney, John E. Ferri, B. A. Blachowicz	2001	10
16	Wafer-scale 3D integration of InGaAs photodiode arrays with Si readout circuits by oxide bonding and through-oxide vias Microelectronic Engineering ·C. L. Chen, C. L. Chen, D. Yost, J.M. Knecht, Jim Wey, David Chapman, Douglas C. Oakley, A.M. Soares, L.J. Mahoney, J.P. Donnelly, C.K. Chen, Vyshnavi Suntharalingam, R. Berger, Wenqian Hu, B.D. Wheeler, C.L. Keast, David C. Shaver	2010	10
17	Subwavelength Optical Lithography with Phase-Shift Photomasks M. Fritze, Brian Tyrrell, David K. Astolfi, Renee Lambert, D. Yost, Anthony R. Forte, Susan G. Cann, B.D. Wheeler	2003	9
18	Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits Applied Physics Letters ·Thomas Hazard, Wayne Woods, D. Rosenberg, Rabindra Das, Cyrus F. Hirjibehedin, David Kim, J.M. Knecht, Justin Mallek, Alexander Melville, Bethany M. Niedzielski, Kyle Serniak, Katrina Sliwa, D. Yost, Jonilyn Yoder, William D. Oliver, Mollie E. Schwartz	2023	8
19	Wafer-Scale 3D Integration of Silicon-on-Insulator RF Amplifiers DSpace@MIT (Massachusetts Institute of Technology) ·C. L. Chen, C. K. Chen, D. Yost, J.M. Knecht, P.W. Wyatt, J.A. Burns, K. Warner, Pascale Gouker, P. Healey, Bruce Wheeler, C.L. Keast	2009	8
20	Three-dimensional integration of silicon-on-insulator RF amplifier Electronics Letters ·C.L. Chen, C.K. Chen, D. Yost, J.M. Knecht, P.W. Wyatt, J.A. Burns, K. Warner, Pascale Gouker, P. Healey, Bruce Wheeler, C.L. Keast	2008	8

About D. Yost

D. Yost is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Artificial Intelligence and Condensed Matter Physics, having authored 40 papers that have together received 736 indexed citations. Recurring topics across this work include Semiconductor materials and devices (15 papers), 3D IC and TSV technologies (12 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Advancements in Photolithography Techniques (7 papers), Thin-Film Transistor Technologies (7 papers), Quantum and electron transport phenomena (7 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers) and Photonic and Optical Devices (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (633 citations), Instrumentation (32 citations), Atomic and Molecular Physics, and Optics (168 citations), Automotive Engineering (59 citations) and Hardware and Architecture (30 citations). D. Yost has collaborated with scholars based in United States and France. Frequent co-authors include C.L. Keast, P.W. Wyatt, J.M. Knecht, C.K. Chen, J.A. Burns, Vyshnavi Suntharalingam, K. Warner, Brian F. Aull, Chang‐Lee Chen and M. Fritze. Their work appears in journals such as IEEE Electron Device Letters, IEEE Microwave and Wireless Components Letters, npj Quantum Information, IEEE Circuits and Devices Magazine and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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