D. G. Ast

3.4k citations

151 papers · 2.7k · h-index 29

Impact in

Structural Biology top 5%
Ceramics and Composites top 5%

Papers in

Electrical and Electronic Engineering 87
- Thin-Film Transistor Technologies 46
- Silicon and Solar Cell Technologies 38
- Semiconductor materials and devices 29
Materials Chemistry 67
- Silicon Nanostructures and Photoluminescence 28

Co-authors: R.E. Proano (7 shared papers)Eugene A. Fitzgerald (7 shared papers)J. M. Woodall (4 shared papers)P. D. Kirchner (4 shared papers)G. D. Pettit (3 shared papers)G. P. Watson (10 shared papers)B. Cunningham (12 shared papers)M. H. Brodsky (3 shared papers)
Journals: Journal of Applied Physics (20 papers)Applied Physics Letters (15 papers)Journal of Materials Science (6 papers)Journal of Non-Crystalline Solids (6 papers)Journal of Electronic Materials (5 papers)
Partner nations: United States Singapore Belgium

In The Last Decade

D. G. Ast

143 papers receiving 2.5k citations

Peers

Replace P. Delavignette with:

P. Delavignette Belgium

P. Paufler Germany

S.S. Lau United States

J. Esteve Spain

S.L. Sass United States

P.B. Barna Hungary

G. Nouet France

Jürgen W. Gerlach Germany

H. Saka Japan

Hengqiang Ye China

D. G. Ast relative to P. Delavignette Belgium P. Delavignette's profile →

Citations per field

00.5×2×3.5×

P. Delavignette · 1×

×1.0 66/68

SB

×1.5 172/116

CC

×2.0 930/462

AMPO

×3.5 2k/437

EEE

×0.8 1k/2k

MC

Citations per year

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Countries citing papers authored by D. G. Ast

Since Specialization

Citations

This map shows the geographic impact of D. G. Ast's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. G. Ast with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. G. Ast more than expected).

Fields of papers citing papers by D. G. Ast

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. G. Ast. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. G. Ast. The network helps show where D. G. Ast may publish in the future.

Co-authors

The 25 scholars most cited alongside D. G. Ast, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. G. Ast Line = papers co-authored together D. G. Ast links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 151 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area Journal of Applied Physics ·Eugene A. Fitzgerald, G. P. Watson, R.E. Proano, D. G. Ast, P. D. Kirchner, G. D. Pettit, J. M. Woodall	1989	259
2	Development and electrical properties of undoped polycrystalline silicon thin-film transistors IEEE Transactions on Electron Devices ·R.E. Proano, R.S. Misage, D. G. Ast	1989	201
3	Amorphous-to-Quasicrystalline Transformation in the Solid State Physical Review Letters ·D. A. Lilienfeld, M. Nastasi, H. H. Johnson, D. G. Ast, J. W. Mayer	1985	146
4	Structure and recombination in InGaAs/GaAs heterostructures Journal of Applied Physics ·Eugene A. Fitzgerald, D. G. Ast, P. D. Kirchner, G. D. Pettit, J. M. Woodall	1988	138
5	Viscosity and crystallization kinetics of As2Se3 Journal of Non-Crystalline Solids ·Donald W. Henderson, D. G. Ast	1984	69
6	The structure of second and third order twin boundaries in silicon Scripta Metallurgica ·Mark D. Vaudin, B. Cunningham, D. G. Ast	1983	63
7	Elimination of interface defects in mismatched epilayers by a reduction in growth area Applied Physics Letters ·Eugene A. Fitzgerald, P. D. Kirchner, R.E. Proano, G. D. Pettit, J. M. Woodall, D. G. Ast	1988	62
8	TEM observations on grain boundaries in sintered silicon Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·H. Föll, D. G. Ast	1979	59
9	Effects of the presence/absence of HCl during gate oxidation on the electrical and structural properties of polycrystalline silicon thin-film transistors Journal of Applied Physics ·R.E. Proano, D. G. Ast	1989	53
10	Free-Standing Thin Films Containing Hexagonally Organized Silver Nanocrystals in a Polymer Matrix Advanced Materials ·May Lim, D. G. Ast	2001	50
11	The measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substrates Journal of Applied Physics ·G. P. Watson, D. G. Ast, Timothy J. Anderson, Balu Pathangey, Y. Hayakawa	1992	49
12	Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous silicon Philosophical Magazine B ·D. G. Ast, M. H. Brodsky	1980	49
13	Thickness dependent conductivity of n-type hydrogenated amorphous silicon Journal of Non-Crystalline Solids ·D. G. Ast, M. H. Brodsky	1980	47
14	Origin of the fringe structure observed in high resolution bright-field electron micrographs of amorphous materials Philosophical magazine ·William Krakow, D. G. Ast, William Goldfarb, Benjamin M. Siegel	1976	46
15	Electron diffraction and microscopy studies of the structure of grain boundaries in silicon Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·C. B. Carter, H. Föll, D. G. Ast, S.L. Sass	1981	45
16	Anisotropic strain relaxation of GaInP epitaxial layers in compression and tension Journal of Applied Physics ·M. J. Matragrano, D. G. Ast, J. R. Shealy, V. Krishnamoorthy	1996	41
17	Evidence for Percolation-Controlled Conductivity in AmorphousAsxTe1−xFilms Physical Review Letters ·D. G. Ast	1974	40
18	Characterization of reactively sputtered c-axis aligned nanocrystalline InGaZnO4 Applied Physics Letters ·David M. Lynch, Bin Zhu, Barnaby D.A. Levin, David A. Muller, D. G. Ast, Raymond G. Greene, Michael O. Thompson	2014	38
19	Fracture toughness and yield strength of annealed NiFe base metallic glasses Materials Science and Engineering ·D. G. Ast, D. J. Krenitsky	1976	38
20	High mobility, dual layer, c-axis aligned crystalline/amorphous IGZO thin film transistor Applied Physics Letters ·Chen-Yang Chung, Bin Zhu, Raymond G. Greene, Michael O. Thompson, D. G. Ast	2015	36

About D. G. Ast

D. G. Ast is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Mechanical Engineering and Biomedical Engineering, having authored 151 papers that have together received 2.7k indexed citations. Recurring topics across this work include Thin-Film Transistor Technologies (46 papers), Silicon and Solar Cell Technologies (38 papers), Semiconductor materials and interfaces (34 papers), Semiconductor materials and devices (29 papers), Silicon Nanostructures and Photoluminescence (28 papers), Metallic Glasses and Amorphous Alloys (19 papers), Semiconductor Quantum Structures and Devices (19 papers) and Electron and X-Ray Spectroscopy Techniques (12 papers). The work is most often cited by research in Structural Biology (66 citations), Ceramics and Composites (172 citations), Atomic and Molecular Physics, and Optics (930 citations), Electrical and Electronic Engineering (1.5k citations) and Materials Chemistry (1.2k citations). D. G. Ast has collaborated with scholars based in United States, Singapore and Belgium. Frequent co-authors include R.E. Proano, Eugene A. Fitzgerald, J. M. Woodall, P. D. Kirchner, G. D. Pettit, G. P. Watson, B. Cunningham, M. H. Brodsky, H. Föll and H. H. Johnson. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Journal of Materials Science, Journal of Non-Crystalline Solids and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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D. G. Ast

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