D. Cherns

5.8k citations

163 papers · 4.8k · h-index 37

Impact in

Structural Biology top 0.5%
Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials

Papers in

Materials Chemistry 86
- ZnO doping and properties 43
- Copper-based nanomaterials and applications 16
Electrical and Electronic Engineering 62
- Semiconductor materials and devices 28

Co-authors: F. A. Ponce (21 shared papers)S. J. Henley (5 shared papers)David J. Fermı́n (12 shared papers)W. T. Young (5 shared papers)Michael N. R. Ashfold (6 shared papers)Chengge Jiao (3 shared papers)J. W. Steeds (7 shared papers)Bo Hou (6 shared papers)
Journals: Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties (19 papers)Applied Physics Letters (12 papers)Journal of Crystal Growth (7 papers)Ultramicroscopy (7 papers)Journal of Applied Physics (6 papers)
Partner nations: United Kingdom United States Japan

In The Last Decade

D. Cherns

160 papers receiving 4.6k citations

Peers

Replace C. Kisielowski with:

C. Kisielowski United States

Euijoon Yoon South Korea

S. Anders United States

Wilfried Sigle Germany

César Magén Spain

J. Taftø Norway

Gerd Duscher United States

Christian Elsässer Germany

F. Phillipp Germany

S. Amelinckx Belgium

D. Cherns relative to C. Kisielowski United States C. Kisielowski's profile →

Citations per field

00.5×1.5×

C. Kisielowski · 1×

×0.5 298/587

SB

×1.3 1k/1k

CMP

×0.8 411/542

SCF

×0.7 3k/4k

MC

×1.1 996/870

EOMM

Citations per year

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Countries citing papers authored by D. Cherns

Since Specialization

Citations

This map shows the geographic impact of D. Cherns's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Cherns with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Cherns more than expected).

Fields of papers citing papers by D. Cherns

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Cherns. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Cherns. The network helps show where D. Cherns may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Cherns, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Cherns Line = papers co-authored together D. Cherns links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 163 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Electronic and optical properties of single crystal SnS₂: an earth-abundant disulfide photocatalyst Journal of Materials Chemistry A ·Lee A. Burton, Thomas J. Whittles, David Hesp, W. M. Linhart, Jonathan M. Skelton, Bo Hou, Richard F. Webster, Graeme O’Dowd, C. Reece, D. Cherns, David J. Fermı́n, T. D. Veal, V.R. Dhanak, Aron Walsh	2015	278
2	Direct resolution of surface atomic steps by transmission electron microscopy Philosophical magazine ·D. Cherns	1974	227
3	Atomic structure of the NiSi₂/(111)Si interface Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·D. Cherns, G. R. Anstis, J. L. Hutchison, John C. H. Spence	1982	203
4	Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence Applied Physics Letters ·D. Cherns, S. J. Henley, F. A. Ponce	2001	200
5	Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration Communications Physics ·Chao Yuan, Jiahan Li, Lucas Lindsay, D. Cherns, James W. Pomeroy, Song Liu, James H. Edgar, Martin Kuball	2019	194
6	Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques Applied Physics Letters ·F. A. Ponce, D. Cherns, W. T. Young, J. W. Steeds	1996	171
7	The growth of transparent conducting ZnO films by pulsed laser ablation Surface and Coatings Technology ·S. J. Henley, Michael N. R. Ashfold, D. Cherns	2003	131
8	Electron Holography Studies of the Charge on Dislocations in GaN Physical Review Letters ·D. Cherns, Chengge Jiao	2001	121
9	Characteristic X-ray Production in Thin Crystals Zeitschrift für Naturforschung A ·D. Cherns, A. Howie, M. Jacobs	1973	104
10	Raman scattering in Me-doped ZnO nanorods (Me = Mn, Co, Cu and Ni) prepared by thermal diffusion Nanotechnology ·T. L. Phan, Roger Vincent, D. Cherns, Nguyễn Xuân Nghĩa, V. V. Ursaki	2008	92
11	Crystal structure and defects visualization of Cu2ZnSnS4 nanoparticles employing transmission electron microscopy and electron diffraction Applied Materials Today ·Nessrin A. Kattan, Bo Hou, David J. Fermı́n, D. Cherns	2015	86
12	The atomic structure of the NiSi₂-(001)Si interface Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·D. Cherns, Crispin Hetherington, C. J. Humphreys	1984	86
13	Observation of coreless dislocations in α-GaN Journal of Crystal Growth ·D. Cherns, W. T. Young, J. W. Steeds, F. A. Ponce, Shuji Nakamura	1997	79
14	Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core–Shell LED Structures Crystal Growth & Design ·Xue Wang, Shufeng Li, Matin Sadat Mohajerani, Johannes Ledig, H.‐H. Wehmann, Martin Mandl, Martin Straßburg, U. Steegmüller, U. Jahn, Jonas Lähnemann, Henning Riechert, Ian Griffiths, D. Cherns, A. Waag	2013	75
15	Density of Deep Trap States in Oriented TiO₂ Nanotube Arrays The Journal of Physical Chemistry C ·Qian Zhang, Verónica Celorrio, Kieren Bradley, Flurin Eisner, D. Cherns, Wei Yan, David J. Fermı́n	2014	72
16	Electron spin resonance and Raman studies of Mn-doped ZnO ceramics Journal of Applied Physics ·The‐Long Phan, Roger Vincent, D. Cherns, Nguyễn Xuân Nghĩa, Manh‐Huong Phan, Seong‐Cho Yu	2007	71
17	Convergent beam diffraction studies of interfaces, defects, and multilayers Journal of Electron Microscopy Technique ·D. Cherns, A. R. Preston	1989	69
18	Cu₂ZnSnS₄ Thin Films Generated from a Single Solution Based Precursor: The Effect of Na and Sb Doping Chemistry of Materials ·Devendra Tiwari, Tristan Koehler, Xianzhong Lin, Robert L. Harniman, Ian Griffiths, Lan Wang, D. Cherns, R. Klenk, David J. Fermı́n	2016	66
19	Structure and Band Edge Energy of Highly Luminescent CdSe_1–xTe_x Alloyed Quantum Dots The Journal of Physical Chemistry C ·Bo Hou, David Parker, Gabriela P. Kissling, Jonathan A. Jones, D. Cherns, David J. Fermı́n	2013	62
20	Oxygen segregation to dislocations in GaN Applied Physics Letters ·M. Hawkridge, D. Cherns	2005	61

About D. Cherns

D. Cherns is a scholar working on Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 163 papers that have together received 4.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (52 papers), ZnO doping and properties (43 papers), Semiconductor materials and devices (28 papers), Ga2O3 and related materials (26 papers), Metal and Thin Film Mechanics (22 papers), Semiconductor materials and interfaces (20 papers), Electron and X-Ray Spectroscopy Techniques (20 papers) and Copper-based nanomaterials and applications (16 papers). The work is most often cited by research in Structural Biology (298 citations), Condensed Matter Physics (1.5k citations), Surfaces, Coatings and Films (411 citations), Materials Chemistry (2.7k citations) and Electronic, Optical and Magnetic Materials (996 citations). D. Cherns has collaborated with scholars based in United Kingdom, United States and Japan. Frequent co-authors include F. A. Ponce, S. J. Henley, David J. Fermı́n, W. T. Young, Michael N. R. Ashfold, Chengge Jiao, J. W. Steeds, Bo Hou, M. J. Stowell and G. R. Anstis. Their work appears in journals such as Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, Applied Physics Letters, Journal of Crystal Growth, Ultramicroscopy and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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