D. B. Eason

2.4k citations

34 papers · 2.2k · 1 hit paper · h-index 16

Impact in

Materials Chemistry top 2%
- ZnO doping and properties
- 2D Materials and Applications
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Atomic and Molecular Physics, and Optics 24
- Semiconductor Quantum Structures and Devices 18
- Quantum and electron transport phenomena 3
- Semiconductor materials and interfaces 3
Condensed Matter Physics 7
- GaN-based semiconductor devices and materials 6

Co-authors: Gene Cantwell (15 shared papers)C. W. Litton (6 shared papers)DONALD C. REYNOLDS (5 shared papers)David C. Look (2 shared papers)Robert Jones (1 shared paper)J. F. Schetzina (15 shared papers)N. C. Giles (2 shared papers)N. Y. Garces (2 shared papers)
Journals: Applied Physics Letters (4 papers)Journal of Crystal Growth (3 papers)Journal of Applied Physics (3 papers)Physical Review Letters (2 papers)Nanoscale (1 paper)
Partner nations: United States Japan Austria

In The Last Decade

D. B. Eason

33 papers receiving 2.1k citations

D. B. Eason's Hit Papers

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Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy 2002 · 1.2k citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2002 Applied Physics Letters

Peers

Countries citing papers authored by D. B. Eason

Since Specialization

Citations

This map shows the geographic impact of D. B. Eason's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. B. Eason with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. B. Eason more than expected).

Fields of papers citing papers by D. B. Eason

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. B. Eason. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. B. Eason. The network helps show where D. B. Eason may publish in the future.

Co-authors

The 25 scholars most cited alongside D. B. Eason, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. B. Eason Line = papers co-authored together D. B. Eason links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy Applied Physics Letters ·David C. Look, DONALD C. REYNOLDS, C. W. Litton, Robert Jones, D. B. Eason, Gene Cantwell Hit paper breakdown →	2002	1179
2	Production of nitrogen acceptors in ZnO by thermal annealing Applied Physics Letters ·N. Y. Garces, N. C. Giles, L. E. Halliburton, Gene Cantwell, D. B. Eason, DONALD C. REYNOLDS, D. C. Look	2002	183
3	Polarized photoreflectance spectra of excitonic polaritons in a ZnO single crystal Journal of Applied Physics ·Shigefusa F. Chichibu, T. Sota, Gene Cantwell, D. B. Eason, C. W. Litton	2002	110
4	High-brightness blue and green light-emitting diodes Applied Physics Letters ·D. B. Eason, Zhongliang Yu, W. C. Hughes, W. H. Roland, Chris Boney, J. W. Cook, J. F. Schetzina, Gene Cantwell	1995	83
5	Molecular nitrogen (N2−) acceptors and isolated nitrogen (N−) acceptors in ZnO crystals Journal of Applied Physics ·N. Y. Garces, Lijun Wang, N. C. Giles, L. E. Halliburton, Gene Cantwell, D. B. Eason	2003	71
6	Brillouin scattering study of ZnO Journal of Applied Physics ·T. Azuhata, Masaki Takesada, Tohru Yagi, A. Shikanai, Shigefusa F. Chichibu, Atsushi Nakamura, T. Sota, Gene Cantwell	2003	70
7	Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage IEEE Electron Device Letters ·Shivam Sharma, Lingyu Meng, A F M Anhar Uddin Bhuiyan, Zixuan Feng, D. B. Eason, Hongping Zhao, Uttam Singisetti	2022	59
8	Femtosecond Coherent Spectroscopy of Bulk ZnSe and ZnCdSe/ZnSe Quantum Wells Physical Review Letters ·A. J. Fischer, D. S. Kim, J. J. Song, D. B. Eason, J. F. Schetzina, Heng Luo, J. K. Furdyna, T. Yao	1994	57
9	Covalent 2D Cr2Te3 ferromagnet Materials Research Letters ·Mengying Bian, A. N. Kamenskii, Mengjiao Han, Wenjie Li, Sichen Wei, Xuezeng Tian, D. B. Eason, Fan Sun	2021	45
10	Molecular-beam epitaxy of ZnS using an elemental S source Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·J. W. Cook, D. B. Eason, R. P. Vaudo, J. F. Schetzina	1992	40
11	Influence of thickness on crystallinity in wafer-scale GaTe nanolayers grown by molecular beam epitaxy AIP Advances ·Che Jin Bae, Jonathan McMahon, Hermann Detz, G. Strasser, Junsung Park, D. B. Eason +1 other	2017	33
12	Integrated heterostructure devices composed of II–VI materials with Hg-based contact layers Journal of Crystal Growth ·Jiacheng Ren, D. B. Eason, L.E. Churchill, Zhongliang Yu, Chris Boney, J. W. Cook, J. F. Schetzina, Nadia A. El-Masry	1994	21
13	Strong biexcitonic effects and exciton-exciton correlations in ZnO Physical review. B, Condensed matter ·Kouji Hazu, T. Sota, Satoru Adachi, Shigefusa F. Chichibu, Gene Cantwell, D. B. Eason, DONALD C. REYNOLDS, C. W. Litton +1 other	2003	21
14	Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers Nanoscale Research Letters ·Vladimir Mitin, A. A. Antipov, Andrei V. Sergeev, Nizami Z. Vagidov, D. B. Eason, G. Strasser	2010	19
15	Ultraviolet quantum well structures based on ZnS/ZnS1−xSex and ZnS/Zn1−xCdxS multilayers grown by molecular-beam epitaxy Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·R. P. Vaudo, D. B. Eason, Karen Bowers, K. J. Gossett, J. W. Cook, J. F. Schetzina	1993	17
16	Blue and green light-emitting diode structures grown by molecular beam epitaxy on ZnSe substrates Journal of Crystal Growth ·D. B. Eason, Jiacheng Ren, Zhongliang Yu, C. Hughes, J. W. Cook, J. F. Schetzina, Nadia A. El-Masry, Gene Cantwell	1995	16
17	Light Emission from Quantum Well Structures Containing ZnS, ZnSe, and Related Alloys Japanese Journal of Applied Physics ·Zhongliang Yu, Jiacheng Ren, Y. Lansari, B. Sneed, Karen Bowers, Chris Boney, D. B. Eason, R. P. Vaudo	1993	15
18	Femtosecond four-wave-mixing studies of exciton localization and exciton-exciton interaction in ZnSe/ Znx Cd1−x Se quantum wells Physical review. B, Condensed matter ·A. J. Fischer, D. S. Kim, J. J. Song, D. B. Eason, J. F. Schetzina, Heng Luo, J. K. Furdyna +3 others	1994	14
19	High-brightness light-emitting diodes grown by molecular beam epitaxy on ZnSe substrates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·D. B. Eason, Zhongliang Yu, W. C. Hughes, Chris Boney, J. W. Cook, J. F. Schetzina, David R. Black, Gene Cantwell	1995	13
20	Quaternary II–VI alloys for blue and green light emitting diode applications Journal of Crystal Growth ·D. B. Eason, Zhongliang Yu, Chris Boney, Jiacheng Ren, L.E. Churchill, J. W. Cook, J. F. Schetzina, Nadia A. El-Masry	1994	12

About D. B. Eason

D. B. Eason is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry and Biophysics, having authored 34 papers that have together received 2.2k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (18 papers), Semiconductor Lasers and Optical Devices (8 papers), ZnO doping and properties (7 papers), GaN-based semiconductor devices and materials (6 papers), Advanced Semiconductor Detectors and Materials (4 papers), Quantum and electron transport phenomena (3 papers), Semiconductor materials and interfaces (3 papers) and Chalcogenide Semiconductor Thin Films (2 papers). The work is most often cited by research in Materials Chemistry (1.6k citations), Atomic and Molecular Physics, and Optics (372 citations), Condensed Matter Physics (102 citations), Electronic, Optical and Magnetic Materials (103 citations) and Electrical and Electronic Engineering (261 citations). D. B. Eason has collaborated with scholars based in United States, Japan and Austria. Frequent co-authors include Gene Cantwell, C. W. Litton, DONALD C. REYNOLDS, David C. Look, Robert Jones, J. F. Schetzina, N. C. Giles, N. Y. Garces, L. E. Halliburton and J. W. Cook. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Applied Physics, Physical Review Letters and Nanoscale.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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D. B. Eason

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