A. E. Schmitz

3.5k citations

70 papers · 2.8k · 1 hit paper · h-index 28

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 2%
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices

Papers in

Condensed Matter Physics 28
- GaN-based semiconductor devices and materials 28
Electrical and Electronic Engineering 62
- Radio Frequency Integrated Circuit Design 33
- Semiconductor materials and devices 15
- Advancements in Semiconductor Devices and Circuit Design 13
- Advanced Power Amplifier Design 6
- Photonic and Optical Devices 6

Co-authors: Miroslav Micovic (26 shared papers)I. Milosavljevic (20 shared papers)Thomas Frach (2 shared papers)P. J. Willadsen (17 shared papers)P. Hashimoto (16 shared papers)A. A. Kiselev (3 shared papers)Richard S. Ross (3 shared papers)Ming Hu (16 shared papers)
Journals: IEEE Electron Device Letters (6 papers)Electronics Letters (4 papers)Applied Physics Letters (3 papers)IEEE Transactions on Electron Devices (3 papers)IEEE Microwave and Wireless Components Letters (2 papers)
Partner nations: United States Germany Netherlands

In The Last Decade

A. E. Schmitz

68 papers receiving 2.7k citations

A. E. Schmitz's Hit Papers

align trajectories log scale

Coherent singlet-triplet oscillations in a silicon-based double quantum dot 2012 · 413 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2012 Nature

Peers

Countries citing papers authored by A. E. Schmitz

Since Specialization

Citations

This map shows the geographic impact of A. E. Schmitz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. E. Schmitz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. E. Schmitz more than expected).

Fields of papers citing papers by A. E. Schmitz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. E. Schmitz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. E. Schmitz. The network helps show where A. E. Schmitz may publish in the future.

Co-authors

The 25 scholars most cited alongside A. E. Schmitz, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. E. Schmitz Line = papers co-authored together A. E. Schmitz links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 70 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Coherent singlet-triplet oscillations in a silicon-based double quantum dot Nature ·Brett Maune, Matthew Borselli, Bing Hua Huang, Thaddeus D. Ladd, Peter W. Deelman, Kevin S. Holabird, A. A. Kiselev, Ivan Alvarado-Rodriguez Hit paper breakdown →	2012	413
2	The digital silicon photomultiplier — Principle of operation and intrinsic detector performance Thomas Frach, G. Prescher, C. Degenhardt, R. de Gruyter, A. E. Schmitz, R. Ballizany	2009	248
3	Reduced Sensitivity to Charge Noise in Semiconductor Spin Qubits via Symmetric Operation Physical Review Letters ·Matthew D. Reed, Brett Maune, Reed W. Andrews, Matthew Borselli, Kevin Eng, Michael P. Jura, A. A. Kiselev, Thaddeus D. Ladd	2016	219
4	The digital Silicon Photomultiplier — A novel sensor for the detection of scintillation light C. Dege, G. Prescher, Thomas Frach, Andreas Thon, R. de Gruyter, A. E. Schmitz, R. Ballizany	2009	118
5	Ultra-low resistance ohmic contacts in graphene field effect transistors Applied Physics Letters ·Jeong‐Sun Moon, Mike Antcliffe, Hwa-Chang Seo, Daniel J. Curtis, Stanley Lin, A. E. Schmitz, I. Milosavljevic, A. A. Kiselev	2012	113
6	GaN Technology for E, W and G-Band Applications A. Margomenos, A. Kurdoghlian, Miroslav Micovic, Keisuke Shinohara, David F. Brown, Andrea L. Corrion, Harris P. Moyer, Shawn D. Burnham	2014	89
7	112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers IEEE Transactions on Microwave Theory and Techniques ·B. Agarwal, A. E. Schmitz, J.J. Brown, Mehran Matloubian, Megan Case, Marc Le Roy, Mark Lui, Mark J. W. Rodwell	1998	88
8	92–96 GHz GaN power amplifiers Miroslav Micovic, A. Kurdoghlian, A. Margomenos, David F. Brown, Keisuke Shinohara, Shawn D. Burnham, I. Milosavljevic, R. L. Bowen	2012	88
9	GaN HFET for W-band Power Applications Miroslav Micovic, A. Kurdoghlian, P. Hashimoto, Ming Hu, Mike Antcliffe, P. J. Willadsen, Wei-Ting Wong, R. L. Bowen	2006	83
10	GaN double ifeterojunction field effect transistor for microwave and millimeterwave power applications Miroslav Micovic, P. Hashimoto, Ming Hu, I. MilosavIjevic, Janna R. Duvall, P. J. Willadsen, Wei-Ting Wong, Adam M. Conway	2005	79
11	High frequency GaN HEMTs for RF MMIC applications Miroslav Micovic, David F. Brown, Dean C. Regan, Joel C. Wong, Yixi Tang, Florian Herrault, D. Santos, Shawn D. Burnham	2016	78
12	Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz IEEE Electron Device Letters ·Keisuke Shinohara, Dean C. Regan, I. Milosavljevic, Andrea L. Corrion, David F. Brown, P. J. Willadsen, C. Butler, A. E. Schmitz	2011	74
13	GaAs-compatible surface-micromachined RF MEMS switches Electronics Letters ·Daniel J. Hyman, A. E. Schmitz, Brett Warneke, Tsung-Yuan Hsu, Juan E Lam, J.J. Brown, J. Schaffner, Andrew A. Walston	1999	70
14	The emitter efficiency of bipolar transistors Solid-State Electronics ·Henk C. de Graaff, J.W. Slotboom, A. E. Schmitz	1977	67
15	GaN enhancement/depletion-mode FET logic for mixed signal applications Electronics Letters ·Miroslav Micovic, T. Tsen, Ming Hu, P. Hashimoto, P. J. Willadsen, I. Milosavljevic, A. E. Schmitz, Mike Antcliffe	2005	62
16	Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG Keisuke Shinohara, Dean C. Regan, Andrea L. Corrion, David F. Brown, Yixi Tang, Joel C. Wong, G. de Candia, A. E. Schmitz	2012	60
17	GaN MMIC technology for microwave and millimeter-wave applications Miroslav Micovic, A. Kurdoghlian, Harris P. Moyer, P. Hashimoto, A. E. Schmitz, I. Milosavljevic, P. J. Willadsen, Wei-Ting Wong	2005	60
18	Graphene FETs for Zero-Bias Linear Resistive FET Mixers IEEE Electron Device Letters ·J. S. Moon, H.-C. Seo, Mike Antcliffe, Van Doan Le, C. McGuire, A. E. Schmitz, Luke Owuor Nyakiti, David Kurt Gaskill	2013	54
19	Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm $g_{m}$ and 112-GHz $f_{T}$ IEEE Electron Device Letters ·Andrea L. Corrion, Keisuke Shinohara, Dean C. Regan, I. Milosavljevic, P. Hashimoto, P. J. Willadsen, A. E. Schmitz, D. Wheeler	2010	53
20	220GHz fT and 400GHz fmax in 40-nm GaN DH-HEMTs with re-grown ohmic Keisuke Shinohara, Andrea L. Corrion, Dean C. Regan, I. Milosavljevic, David F. Brown, Shawn D. Burnham, P. J. Willadsen, C. Butler	2010	44

About A. E. Schmitz

A. E. Schmitz is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 70 papers that have together received 2.8k indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (33 papers), GaN-based semiconductor devices and materials (28 papers), Semiconductor Quantum Structures and Devices (20 papers), Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Ga2O3 and related materials (11 papers), Advanced Power Amplifier Design (6 papers) and Photonic and Optical Devices (6 papers). The work is most often cited by research in Condensed Matter Physics (966 citations), Atomic and Molecular Physics, and Optics (1.2k citations), Electrical and Electronic Engineering (2.0k citations), Radiation (266 citations) and Instrumentation (97 citations). A. E. Schmitz has collaborated with scholars based in United States, Germany and Netherlands. Frequent co-authors include Miroslav Micovic, I. Milosavljevic, Thomas Frach, P. J. Willadsen, P. Hashimoto, A. A. Kiselev, Richard S. Ross, Ming Hu, David F. Brown and A. Kurdoghlian. Their work appears in journals such as IEEE Electron Device Letters, Electronics Letters, Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Microwave and Wireless Components Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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A. E. Schmitz

A. E. Schmitz's Hit Papers

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Fields of papers citing papers by A. E. Schmitz

All Works

About A. E. Schmitz

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