J. Knall

1.3k citations

34 papers · 1.2k · h-index 18

Impact in

Surfaces, Coatings and Films top 5%
- Electron and X-Ray Spectroscopy Techniques
Atomic and Molecular Physics, and Optics top 5%
- Surface and Thin Film Phenomena
- Semiconductor materials and interfaces
- Advanced Chemical Physics Studies
- Semiconductor Quantum Structures and Devices

Papers in

Electrical and Electronic Engineering 25
- Silicon and Solar Cell Technologies 11
- Integrated Circuits and Semiconductor Failure Analysis 9
- Semiconductor materials and devices 9
- Thin-Film Transistor Technologies 5
Atomic and Molecular Physics, and Optics 21
- Semiconductor materials and interfaces 10
- Surface and Thin Film Phenomena 8
- Force Microscopy Techniques and Applications 6

Co-authors: J. B. Pethica (7 shared papers)J.‐E. Sundgren (12 shared papers)G. V. Hansson (7 shared papers)J. E. Greene (7 shared papers)Scott A. Barnett (7 shared papers)T. S. Jones (4 shared papers)Andrew J. Mayne (4 shared papers)W. H. Weinberg (4 shared papers)
Journals: Surface Science (7 papers)Applied Physics Letters (3 papers)Physical review. B, Condensed matter (3 papers)Journal of Applied Physics (3 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2 papers)
Partner nations: United States Sweden United Kingdom

In The Last Decade

J. Knall

34 papers receiving 1.1k citations

Peers

Countries citing papers authored by J. Knall

Since Specialization

Citations

This map shows the geographic impact of J. Knall's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Knall with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Knall more than expected).

Fields of papers citing papers by J. Knall

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Knall. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Knall. The network helps show where J. Knall may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Knall, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Knall Line = papers co-authored together J. Knall links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 34 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Growth of Ge on Si(100) and Si(113) studied by STM Surface Science ·J. Knall, J. B. Pethica	1992	121
2	An STM study of the chemisorption of C2H4 on Si(001)(2 × 1) Surface Science ·Andrew J. Mayne, A. R. Avery, J. Knall, T. S. Jones, G. Andrew D. Briggs, W. H. Weinberg	1993	120
3	Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growth Surface Science ·J. Knall, J.‐E. Sundgren, G. V. Hansson, J. E. Greene	1986	117
4	Structure of Si(113) determined by scanning tunneling microscopy Physical Review Letters ·J. Knall, J. B. Pethica, J. D. Todd, J.H. Wilson	1991	115
5	An STM study of the chemisorption of C2H4 on Si(001)(2×1) Surface Science Letters ·Andrew J. Mayne, A. R. Avery, J. Knall, T. S. Jones, G. Andrew D. Briggs, W. H. Weinberg	1993	76
6	Incorporation of accelerated low-energy (50–500 eV) In+ ions in Si(100) films during growth by molecular-beam epitaxy Journal of Applied Physics ·M. Arif Hasan, J. Knall, Scott A. Barnett, J.‐E. Sundgren, L. C. Markert, Angus Rockett, J. E. Greene	1989	65
7	Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy Physical review. B, Condensed matter ·W.-X. Ni, J. Knall, M. Arif Hasan, G. V. Hansson, J.‐E. Sundgren, Scott A. Barnett, L. C. Markert, J. E. Greene	1989	58
8	A low-energy metal-ion source for primary ion deposition and accelerated ion doping during molecular-beam epitaxy Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·M. Arif Hasan, J. Knall, Scott A. Barnett, Angus Rockett, J.‐E. Sundgren, J. E. Greene	1987	42
9	Indium incorporation during the growth of (100)Si by molecular beam epitaxy: Surface segregation and reconstruction Applied Physics Letters ·J. Knall, J.‐E. Sundgren, J. E. Greene, Angus Rockett, Scott A. Barnett	1984	42
10	New method to study band offsets applied to strainedSi/Si1−xGex(100)heterojunction interfaces Physical review. B, Condensed matter ·W.-X. Ni, J. Knall, G. V. Hansson	1987	42
11	Electrical properties of Si films doped with 200-eV In+ ions during growth by molecular-beam epitaxy Journal of Applied Physics ·J.-P. Noël, N. Hirashita, L. C. Markert, Y.-W. Kim, J. E. Greene, J. Knall, W.-X. Ni, M. Arif Hasan, J.‐E. Sundgren	1989	41
12	3D TFT-SONOS memory cell for ultra-high density file storage applications Andrew J. Walker, S. Nallamothu, E.-H. Chen, M. Mahajani, S. B. Herner, Michael Clark, J.M. Cleeves, S. V. Dunton, Victoria Eckert, Ja Myung Gu, Shijie Hu, J. Knall, M. Konevecki, C. Petti, S. Radigan, Usha Raghuram, John Vienna, M. A. Vyvoda	2004	39
13	Adsorption and desorption kinetics of In on Si(100) Surface Science ·J. Knall, Scott A. Barnett, J.‐E. Sundgren, J. E. Greene	1989	37
14	STM imaging of molecules: factors affecting their reliable imaging Surface Science ·Z. Nawaz, Tommaso R. I. Cataldi, J. Knall, R. Somekh, J. B. Pethica	1992	33
15	Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy Applied Physics Letters ·Paul Fons, N. Hirashita, L. C. Markert, Y.-W. Kim, J. E. Greene, W.-X. Ni, J. Knall, G. V. Hansson, J.‐E. Sundgren	1988	31
16	Chemisorption of organic adsorbates on silicon and gold studied by scanning tunnelling microscopy Faraday Discussions ·Andrew J. Mayne, Tommaso R. I. Cataldi, J. Knall, A. R. Avery, T. S. Jones, Lidriana de Souza Pinheiro, H. Allen O. Hill, G. A. D. Briggs, J. B. Pethica, W. H. Weinberg	1992	24
17	The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si Journal of Applied Physics ·J. Knall, Lucia Romano, D. K. Biegelsen, R. D. Bringans, H. C. Chui, J. S. Harris, D.W. Treat, D. P. Bour	1994	20
18	Quantitative voltage-dependent STM image simulations for semiconductors Ultramicroscopy ·J.H. Wilson, D. A. McInnes, J. Knall, A. P. Sutton, J. B. Pethica	1992	19
19	Dopant depth distributions as a function of growth temperature in In-doped (100)Si grown by molecular beam epitaxy Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Angus Rockett, Scott A. Barnett, J. E. Greene, J. Knall, J.‐E. Sundgren	1985	16
20	Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy Thin Solid Films ·J.‐E. Sundgren, J. Knall, W.-X. Ni, M. Arif Hasan, L. C. Markert, J. E. Greene	1989	16

About J. Knall

J. Knall is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Computational Mechanics, Surfaces, Coatings and Films and Materials Chemistry, having authored 34 papers that have together received 1.2k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (11 papers), Semiconductor materials and interfaces (10 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Ion-surface interactions and analysis (9 papers), Semiconductor materials and devices (9 papers), Surface and Thin Film Phenomena (8 papers), Force Microscopy Techniques and Applications (6 papers) and Thin-Film Transistor Technologies (5 papers). The work is most often cited by research in Surfaces, Coatings and Films (194 citations), Atomic and Molecular Physics, and Optics (762 citations), Structural Biology (28 citations), Electrical and Electronic Engineering (779 citations) and Computational Mechanics (202 citations). J. Knall has collaborated with scholars based in United States, Sweden and United Kingdom. Frequent co-authors include J. B. Pethica, J.‐E. Sundgren, G. V. Hansson, J. E. Greene, Scott A. Barnett, T. S. Jones, Andrew J. Mayne, W. H. Weinberg, A. R. Avery and J.H. Wilson. Their work appears in journals such as Surface Science, Applied Physics Letters, Physical review. B, Condensed matter, Journal of Applied Physics and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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