H. Angerer
Impact in
- Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
-
- Ga2O3 and related materials
Papers in
-
- GaN-based semiconductor devices and materials 28
-
- Semiconductor materials and devices 7
- Silicon Carbide Semiconductor Technologies 2
- Co-authors
- O. Ambacher (28 shared papers)M. Stutzmann (25 shared papers)R. Dimitrov (11 shared papers)R. Höpler (4 shared papers)Daniel Brunner (4 shared papers)E. Bustarret (1 shared paper)W. Rieger (5 shared papers)N. Ibl (2 shared papers)
- Journals
- Applied Physics Letters (4 papers)MRS Internet Journal of Nitride Semiconductor Research (3 papers)physica status solidi (b) (3 papers)Journal of Applied Physics (3 papers)Diamond and Related Materials (2 papers)
- Partner nations
- GermanyUnited StatesUnited Kingdom
In The Last Decade
H. Angerer
33 papers receiving 2.1k citations
H. Angerer's Hit Papers
Peers
Comparison fields: 5 of 45
- Condensed Matter Physics 1.7k
- Electronic, Optical and Magnetic Materials 751
- Atomic and Molecular Physics, and Optics 648
- Mechanics of Materials 494
- Materials Chemistry 874
Countries citing papers authored by H. Angerer
This map shows the geographic impact of H. Angerer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Angerer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Angerer more than expected).
Fields of papers citing papers by H. Angerer
This network shows the impact of papers produced by H. Angerer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Angerer. The network helps show where H. Angerer may publish in the future.
Co-authors
The 25 scholars most cited alongside H. Angerer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 33 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | Optical constants of epitaxial AlGaN films and their temperature dependence Hit paper breakdown → | 1997 | 521 |
| 2 | 1997 | 273 | |
| 3 | 1998 | 227 | |
| 4 | 1996 | 197 | |
| 5 | 1978 | 145 | |
| 6 | 1996 | 125 | |
| 7 | 1996 | 108 | |
| 8 | 1997 | 55 | |
| 9 | 1998 | 53 | |
| 10 | 1997 | 50 | |
| 11 | 1998 | 43 | |
| 12 | 1998 | 42 | |
| 13 | 1997 | 39 | |
| 14 | 1998 | 39 | |
| 15 | 1997 | 39 | |
| 16 | 1998 | 34 | |
| 17 | 1996 | 31 | |
| 18 | 1979 | 26 | |
| 19 | 1997 | 26 | |
| 20 | 1996 | 21 |
About H. Angerer
H. Angerer is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 33 papers that have together received 2.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (28 papers), Metal and Thin Film Mechanics (11 papers), Ga2O3 and related materials (8 papers), ZnO doping and properties (7 papers), Semiconductor materials and devices (7 papers), Semiconductor Quantum Structures and Devices (7 papers), Acoustic Wave Resonator Technologies (5 papers) and Silicon Carbide Semiconductor Technologies (2 papers). The work is most often cited by research in Condensed Matter Physics (1.7k citations), Electronic, Optical and Magnetic Materials (751 citations), Atomic and Molecular Physics, and Optics (648 citations), Mechanics of Materials (494 citations) and Materials Chemistry (874 citations). H. Angerer has collaborated with scholars based in Germany, United States and United Kingdom. Frequent co-authors include O. Ambacher, M. Stutzmann, R. Dimitrov, R. Höpler, Daniel Brunner, E. Bustarret, W. Rieger, N. Ibl, E. Born and J. Cl. Puippe. Their work appears in journals such as Applied Physics Letters, MRS Internet Journal of Nitride Semiconductor Research, physica status solidi (b), Journal of Applied Physics and Diamond and Related Materials.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.