Benjamin Neuschl
About
Benjamin Neuschl has authored 37 papers that have received a total of 716 indexed citations.
This includes 29 papers in Condensed Matter Physics, 21 papers in Electronic, Optical and Magnetic Materials and 18 papers in Materials Chemistry. The topics of these papers are GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (21 papers) and ZnO doping and properties (18 papers). Benjamin Neuschl is often cited by papers focused on GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (21 papers) and ZnO doping and properties (18 papers) and collaborates with scholars based in Germany, United States and China. Benjamin Neuschl's co-authors include K. Thonke, Martin Feneberg, Tobias Meisch, F. Scholz and Martin Klein and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.
In The Last Decade
side by side view
Countries citing papers authored by Benjamin Neuschl
Since SpecializationCitations
Explore authors with similar magnitude of impact
Breakdown of academic impact, for papers by Cheryl Elman Breakdown of academic impact, for papers by Javier Moradiellos Breakdown of academic impact, for papers by John V. Krutilla Breakdown of academic impact, for papers by Simone Landi Breakdown of academic impact, for papers by Zienab Abdel‐Salam Breakdown of academic impact, for papers by Νικόλαος Τσέλιος Breakdown of academic impact, for papers by Pu Wang Breakdown of academic impact, for papers by B. Saoutic