Z. Yang

1.7k citations

32 papers · 392 · h-index 13

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 25
- GaN-based semiconductor devices and materials 24
Atomic and Molecular Physics, and Optics 14
- Semiconductor Quantum Structures and Devices 8
- Quantum and electron transport phenomena 4

Co-authors: Bo Shen (16 shared papers)G.Y. Zhang (14 shared papers)Fujun Xu (8 shared papers)Gongye Zhang (8 shared papers)Tongjun Yu (8 shared papers)Jun Xu (5 shared papers)Ning Tang (6 shared papers)Shaoyun Huang (4 shared papers)
Journals: Journal of Crystal Growth (8 papers)Applied Physics Letters (4 papers)Physics Letters A (3 papers)Journal of Applied Physics (3 papers)Review of Scientific Instruments (2 papers)
Partner nations: China Japan

In The Last Decade

Z. Yang

32 papers receiving 374 citations

Peers

Countries citing papers authored by Z. Yang

Since Specialization

Citations

This map shows the geographic impact of Z. Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Z. Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Z. Yang more than expected).

Fields of papers citing papers by Z. Yang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Z. Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Z. Yang. The network helps show where Z. Yang may publish in the future.

Co-authors

The 25 scholars most cited alongside Z. Yang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Z. Yang Line = papers co-authored together Z. Yang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 32 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Circular photogalvanic effect of the two-dimensional electron gas in AlxGa1−xN∕GaN heterostructures under uniaxial strain Applied Physics Letters ·Xiaowei He, Bo Shen, Yefeng Tang, Ning Tang, Chunming Yin, Fujun Xu, Z. Yang, Gongye Zhang, Y. H. Chen, C. G. Tang, Z. G. Wang	2007	48
2	Study of the structural damage in the (0001) GaN epilayer processed by laser lift-off techniques Applied Physics Letters ·W. H. Chen, Xuanwu Kang, (unknown), R. Lee, Yujue Wang, Tongjun Yu, Z. Yang, Gongye Zhang, Zhiwei Li, K. X. Liu, Xiaopeng Shan, Long You, Dapeng Yu	2007	38
3	High temperature dependence of the density of two-dimensional electron gas in Al0.18Ga0.82N/GaN heterostructures Applied Physics A ·M.J. Wang, Bo Shen, Fujun Xu, Y. Wang, Jun Xu, Shaoyun Huang, Z. Yang, K. Xu, G.Y. Zhang	2007	37
4	Reduction of threading edge dislocation density in n-type GaN by Si delta-doping Journal of Crystal Growth ·(unknown), Z. Yang, Z.T. Chen, Yuan Lü, Tongjun Yu, (unknown), Kun Xu, G.Y. Zhang	2005	23
5	Promoting resuscitation of viable but nonculturable cells ofVibrio harveyiby a resuscitation-promoting factor-like protein YeaZ Journal of Applied Microbiology ·Y. Li, J. Chen, Mingxin Zhao, Z. Yang, (unknown), Xiaomei Zhang	2016	20
6	Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition Journal of Crystal Growth ·Z.T. Chen, Ke Xu, Liping Guo, Z. Yang, Yan‐Kun Su, Xuelin Yang, (unknown), Bo Shen, H. Zhang, G.Y. Zhang	2006	19
7	A study of ZnS(Ag)/6LiF with different mass ratios Radiation Measurements ·Chong Wu, Bin Tang, Z. J. Sun, Qinqin Zhang, Z. Yang, J. Zhang, Yuanchao Yang, Junchen Liang, Jian Wu	2013	19
8	An approach to determine the chemical composition in InGaN/GaN multiple quantum wells Journal of Crystal Growth ·Shengqiang Zhou, M. F. Wu, (unknown), Shuo Yao, He Ma, Rui Nie, Yuzhen Tong, Z. Yang, Tongjun Yu, G.Y. Zhang	2003	18
9	Morphology of threading dislocations in high-resistivity GaN films observed by transmission electron microscopy Journal of Applied Physics ·Lei Lü, Bo Shen, Fujun Xu, Jun Xu, Baowei Gao, Z. Yang, Gongye Zhang, Xing-Yuan Zhang, Dapeng Yu	2007	17
10	Effective mass of the two-dimensional electron gas and band nonparabolicity in AlxGa1−xN∕GaN heterostructures Applied Physics Letters ·Ning Tang, Bo Shen, M. J. Wang, Z. Yang, K. Xu, Gongye Zhang, Tianquan Lin, Bojing Zhu, W. Z. Zhou, Junhao Chu	2006	16
11	Magnetotransport properties of lattice-matched In0.18Al0.82N/AlN/GaN heterostructures Journal of Applied Physics ·Z. L. Miao, Ning Tang, Fujun Xu, L. B. Cen, Kui Han, Jie Song, Chung‐Che Huang, Tongjun Yu, Z. Yang, Xinqiang Wang, Gongye Zhang, Bo Shen, Wei Ke, Jianliang Huang, X. Y. Liu	2011	15
12	Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor PhaseEpitaxy Journal of Crystal Growth ·Y. B. Tao, Tongjun Yu, Zhiyuan Yang, Dan Ling, Yan Wang, Z.Z. Chen, Z. Yang, G.Y. Zhang	2010	14
13	Realization of high-resistance GaN by controlling the annealing pressure of the nucleation layer in metal-organic chemical vapor deposition Thin Solid Films ·Fujun Xu, Jun Xu, Bo Shen, Z. L. Miao, Shaoyun Huang, Lin Lu, Z. Yang, Z. X. Qin, G.Y. Zhang	2008	12
14	Intersubband transitions at atmospheric window in AlxGa1−xN/GaN multiple quantum wells grown on GaN/sapphire templates adopting AlN/GaN superlattices interlayer Applied Physics Letters ·Chung‐Che Huang, Fujun Xu, Xiaodong Yan, Jiepeng Song, Zhe Xü, L. B. Cen, Yinghui Wang, Jinlong Pan, Xinqiang Wang, Z. Yang, Bo Shen, B. S. Zhang, Xiaofang Chen, Wei Lü	2011	11
15	Effects of the passivation of SiN with various growth stoichiometry on the high temperature transport properties of the two-dimensional electron gas in Al Ga1−N/GaN heterostructures Physics Letters A ·M.J. Wang, Bo Shen, Fujun Xu, Y. Wang, Jun Xu, Shaoyun Huang, Z. Yang, Z. X. Qin, G.Y. Zhang	2007	11
16	Ohmic contact mechanism of Ni/Au contact to p-type GaN studied by Rutherford backscattering spectrometry Journal of Crystal Growth ·C.Y. Hu, Z.B. Ding, Z. X. Qin, Z.Z. Chen, Ke Xu, Z. Yang, Bo Shen, Shuo Yao, G.Y. Zhang	2006	8
17	Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers Journal of Crystal Growth ·Y. B. Tao, Z.Z. Chen, Tongjun Yu, Yongming Yin, Xuanwu Kang, Z. Yang, G. Z. Ran, G.Y. Zhang	2010	7
18	Tunneling induced electron transfer in SiN /AlGaN/GaN based metal–insulator–semiconductor structures Physics Letters A ·M.J. Wang, Bo Shen, Y. Wang, Shaoyun Huang, Fangjin Xu, Jun Xu, Z. X. Qin, Z. Yang, G.Y. Zhang	2007	7
19	Influence of the magnetic field on the effective mass of the two‐dimensional electron gas in Al_x Ga_1–xN/GaN heterostructures Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Ning Tang, Bo Shen, M. J. Wang, Z. Yang, Kun Xu, Gongye Zhang, Y. S. Gui, Bojing Zhu, S. L. Guo, Junhao Chu, K. Hoshino, Yasuhiko Arakawa	2006	6
20	High-resistance GaN epilayers with low dislocation density via growth mode modification Journal of Crystal Growth ·Zhe Xü, Fujun Xu, J.M. Wang, Lin Lu, Z. Yang, Xinqiang Wang, Bo Shen	2016	6

About Z. Yang

Z. Yang is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Materials Chemistry, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 32 papers that have together received 392 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (24 papers), Ga2O3 and related materials (11 papers), ZnO doping and properties (9 papers), Metal and Thin Film Mechanics (8 papers), Semiconductor Quantum Structures and Devices (8 papers), Semiconductor materials and devices (6 papers), Quantum and electron transport phenomena (4 papers) and Nuclear Physics and Applications (3 papers). The work is most often cited by research in Condensed Matter Physics (281 citations), Electronic, Optical and Magnetic Materials (129 citations), Atomic and Molecular Physics, and Optics (152 citations), Materials Chemistry (153 citations) and Endocrinology (14 citations). Z. Yang has collaborated with scholars based in China and Japan. Frequent co-authors include Bo Shen, G.Y. Zhang, Fujun Xu, Gongye Zhang, Tongjun Yu, Jun Xu, Ning Tang, Shaoyun Huang, K. Xu and Dapeng Yu. Their work appears in journals such as Journal of Crystal Growth, Applied Physics Letters, Physics Letters A, Journal of Applied Physics and Review of Scientific Instruments.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Z. Yang

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