Masayuki Senoh
Impact in
- Condensed Matter Physics top 0.01%
- GaN-based semiconductor devices and materials
-
- Ga2O3 and related materials
Papers in
-
- GaN-based semiconductor devices and materials 44
-
- Semiconductor Quantum Structures and Devices 31
- Advanced Fiber Laser Technologies 2
- Co-authors
- Shuji Nakamura (41 shared papers)Takashi Mukai (21 shared papers)Naruhito Iwasa (33 shared papers)Shin‐ichi Nagahama (33 shared papers)Takao Yamada (22 shared papers)Toshio Matsushita (26 shared papers)Yasunobu Sugimoto (24 shared papers)Hiroyuki Kiyoku (24 shared papers)
- Journals
- Japanese Journal of Applied Physics (18 papers)Applied Physics Letters (17 papers)Journal of Applied Physics (3 papers)Journal of Crystal Growth (1 paper)MRS Internet Journal of Nitride Semiconductor Research (1 paper)
- Partner nations
- Japan
In The Last Decade
Masayuki Senoh
44 papers receiving 17.3k citations
Masayuki Senoh's Hit Papers
Peers
Comparison fields: 5 of 110
- Condensed Matter Physics 15.5k
- Electronic, Optical and Magnetic Materials 6.2k
- Atomic and Molecular Physics, and Optics 7.6k
- Materials Chemistry 7.7k
- Mechanics of Materials 3.3k
Countries citing papers authored by Masayuki Senoh
This map shows the geographic impact of Masayuki Senoh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Masayuki Senoh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Masayuki Senoh more than expected).
Fields of papers citing papers by Masayuki Senoh
This network shows the impact of papers produced by Masayuki Senoh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Masayuki Senoh. The network helps show where Masayuki Senoh may publish in the future.
Co-authors
The 16 scholars most cited alongside Masayuki Senoh, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 44 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes Hit paper breakdown → | 1994 | 3269 |
| 2 | InGaN-Based Multi-Quantum-Well-Structure Laser Diodes Hit paper breakdown → | 1996 | 2175 |
| 3 | High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures Hit paper breakdown → | 1995 | 1317 |
| 4 | Thermal Annealing Effects on P-Type Mg-Doped GaN Films Hit paper breakdown → | 1992 | 958 |
| 5 | Hole Compensation Mechanism of P-Type GaN Films Hit paper breakdown → | 1992 | 943 |
| 6 | Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes Hit paper breakdown → | 1995 | 933 |
| 7 | High-Power GaN P-N Junction Blue-Light-Emitting Diodes Hit paper breakdown → | 1991 | 708 |
| 8 | InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate Hit paper breakdown → | 1998 | 629 |
| 9 | High-power InGaN/GaN double-heterostructure violet light emitting diodes Hit paper breakdown → | 1993 | 580 |
| 10 | High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes Hit paper breakdown → | 1995 | 515 |
| 11 | P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes Hit paper breakdown → | 1993 | 496 |
| 12 | Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes Hit paper breakdown → | 1996 | 459 |
| 13 | InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices Hit paper breakdown → | 1997 | 415 |
| 14 | High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes Hit paper breakdown → | 1994 | 374 |
| 15 | Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers Hit paper breakdown → | 1991 | 368 |
| 16 | Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates Hit paper breakdown → | 1998 | 302 |
| 17 | Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours Hit paper breakdown → | 1997 | 296 |
| 18 | InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets Hit paper breakdown → | 1996 | 289 |
| 19 | Blue InGaN-based laser diodes with an emission wavelength of 450 nm Hit paper breakdown → | 2000 | 240 |
| 20 | High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates Hit paper breakdown → | 1998 | 233 |
About Masayuki Senoh
Masayuki Senoh is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Electrical and Electronic Engineering, having authored 44 papers that have together received 18.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (44 papers), Semiconductor Quantum Structures and Devices (31 papers), Ga2O3 and related materials (17 papers), Metal and Thin Film Mechanics (14 papers), ZnO doping and properties (9 papers), Semiconductor Lasers and Optical Devices (8 papers), Advanced Fiber Laser Technologies (2 papers) and Photocathodes and Microchannel Plates (2 papers). The work is most often cited by research in Condensed Matter Physics (15.5k citations), Electronic, Optical and Magnetic Materials (6.2k citations), Atomic and Molecular Physics, and Optics (7.6k citations), Materials Chemistry (7.7k citations) and Mechanics of Materials (3.3k citations). Masayuki Senoh has collaborated with scholars based in Japan. Frequent co-authors include Shuji Nakamura, Takashi Mukai, Naruhito Iwasa, Shin‐ichi Nagahama, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku, Tokuya Kozaki and Hitoshi Umemoto. Their work appears in journals such as Japanese Journal of Applied Physics, Applied Physics Letters, Journal of Applied Physics, Journal of Crystal Growth and MRS Internet Journal of Nitride Semiconductor Research.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.