Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Impact in
Classified as
- Journal
- Applied Physics Letters
In The Last Decade
doi.org/10.1063/1.96549 →Countries where authors are citing Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
This map shows the geographic impact of Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer more than expected).
Fields of papers citing Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
This network shows the impact of Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer.
About Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
This paper, published in 1986, received 1.8k indexed citations . Written by Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki and Yoshihiko Toyoda covering the research area of Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering. It is primarily cited by scholars working on Condensed Matter Physics (1.6k citations), Materials Chemistry (924 citations), Electronic, Optical and Magnetic Materials (786 citations), Atomic and Molecular Physics, and Optics (557 citations) and Electrical and Electronic Engineering (515 citations). Published in Applied Physics Letters.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.
This paper is also available at doi.org/10.1063/1.96549.