InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
Impact in
Classified as
- Journal
- Applied Physics Letters
In The Last Decade
doi.org/10.1063/1.120688 →Countries where authors are citing InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
This map shows the geographic impact of InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate more than expected).
Fields of papers citing InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
This network shows the impact of InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate.
About InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
This paper, published in 1998, received 630 indexed citations . Written by Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki and Hitoshi Umemoto covering the research area of Electronic, Optical and Magnetic Materials, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. It is primarily cited by scholars working on Condensed Matter Physics (570 citations), Electronic, Optical and Magnetic Materials (269 citations), Materials Chemistry (265 citations), Atomic and Molecular Physics, and Optics (228 citations) and Electrical and Electronic Engineering (203 citations). Published in Applied Physics Letters.
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This paper is also available at doi.org/10.1063/1.120688.